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panjinping

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Summary: Offcut, based on four orthogonal Omega rocking curve scans indicate
1. 625µm Si(110) maximum offcut is 0.059 degrees at a phi (azimuth) angle of 12.26 degrees
2. Square wafer A (110) maximum offcut is 1.822 degrees at a phi (azimuth) angle of 2.75 degrees.
3. Square wafer B (110) maximum offcut is 1.043 degrees at a phi (azimuth) angle of 71.56 degrees.
Results: The as-received wafers were mounted on the diffractometer ÑÜÉäÒÇ with clamps and oriented with the major flat down and the minor flat on the lower right-hand side for the 625µm Si(110) wafer or with the square wafer letter facing out and arrow pointing down.   The x-ray beam was aligned to the major flat of the wafers so that the offcut direction is relative to the major flat or arrow downward and Phi=0¡ã is straight up.
Omega scans about the Si (220) reflection were acquired in four orthogonal azimuthal angles on all 3 wafer samples after intensity optimization of the Omega and Psi (tilt) axes. Data were acquired on a PANalytical X¡¯Pert Pro MRD diffractometer equipped with a long fine focus Copper X-ray tube, Ge (220) four-bounce incident beam monochromator and a 1.0mm receiving slit.

In both square wafers there is a larger shift in peak position for measurements made at Phi=180 and Phi=270 than at Phi=0 and Phi=90 suggesting that the direction of maximum offset is in the direction of the upper right hand side quadrant (major flat down as the reference edge).

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