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jxlcwy铁杆木虫 (著名写手)
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[求助]
求翻译
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图4a、b分别为SiO2-CCTO陶瓷介电常数随频率以及介电损耗随SiO2 含量的变化曲线(1 MHz)。从 图4a可以看出，在低频率下，各个样品的介电常数相对很高，除SiO2为10 wt％的样品外，所有样品的介电常数均在10 以上，但是高的介电常数随频率的增大却迅速减小；当频率大于3 kHz后，介电常数才趋于稳定。可见，CCTO陶瓷的高介电常数对频率的依赖性很大。研究认为，CCTO由带绝缘晶界的半导体晶粒构成 ，由于晶界与晶粒之间的电导率相差很大而导致大量电荷在晶粒边界处积聚，从而在陶瓷内部形成大量的阻挡层电容器，而表现为高的介电常数，特别在 低频率时表现得更加明显。 求本段翻译。十分感谢，不要那种直接用翻译软件的翻译。。。求大虾帮忙 |
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wyky2007136
金虫 (小有名气)
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jxlcwy(金币+30, 翻译EPI+1): ★★★★★最佳答案 十分感谢 2012-02-21 19:16:39
| Figure 4a and b respectively represent for the change curves of the dielectric constant of SiO2-CCTO ceramic along with frequency and the dielectric loss along with SiO2 content (1 MHz). According to the Figure 4a, the dielectric constant of each sample is relatively high at low frequencies, except for the sample with SiO2 content of 10wt%, the dielectric constants of all samples are above 10, but the high dielectric constant decreases rapidly along with the frequency increase; and when the frequency is greater than 3 kHz, the dielectric constant tends to be stable. Therefore, the high dielectric constant of the CCTO ceramic has great dependence on frequency. Research finds that CCTO is composed of semiconductor grains with insulating grain boundaries, a big difference in conductivity exists between the grain boundary and grain, so that a large number of charges accumulate at the grain boundaries, thus a large number of barrier layer capacitors are formed inside the ceramic, which is represented by high dielectric constant, especially more obvious at low frequency. |
2楼2012-02-21 17:14:26
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3楼2012-02-21 18:02:22
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