| ²é¿´: 343 | »Ø¸´: 1 | |||
| ±¾Ìû²úÉú 1 ¸ö ·ÒëEPI £¬µã»÷ÕâÀï½øÐв鿴 | |||
Âõ²½´ÓÍ·Ô½
|
[ÇóÖú]
·ÒëÒ»¾ä»°
|
||
| SWCNT thin film field effect transistors fabricated using (9,8) nanotubes from our synthesis process have higher average device mobility and a higher fraction of semiconducting devices than those using (6,5) nanotubes. |
» ²ÂÄãϲ»¶
²ÄÁÏ¿¼ÑÐÇóµ÷¼Á×Ü·Ö280
ÒѾÓÐ3È˻ظ´
Çóµ÷¼Á
ÒѾÓÐ4È˻ظ´
²ÄÁϵ÷¼Á
ÒѾÓÐ10È˻ظ´
Çóµ÷¼Áµ½²ÄÁÏ
ÒѾÓÐ3È˻ظ´
»¯¹¤Çóµ÷¼Á£¡
ÒѾÓÐ9È˻ظ´
301Çóµ÷¼Á
ÒѾÓÐ13È˻ظ´
308Çóµ÷¼Á
ÒѾÓÐ13È˻ظ´
²ÄÁϹ¤³Ì310ר˶µ÷¼Á
ÒѾÓÐ15È˻ظ´
304Çóµ÷¼Á
ÒѾÓÐ9È˻ظ´
081700£¬311£¬Çóµ÷¼Á
ÒѾÓÐ16È˻ظ´
sally88814
ÈÙÓþ°æÖ÷ (ÎÄ̳¾«Ó¢)
-

ר¼Ò¾Ñé: +40 - ·ÒëEPI: 11
- Ó¦Öú: 850 (²©ºó)
- ¹ó±ö: 3.07
- ½ð±Ò: 4928.2
- É¢½ð: 27316
- ºì»¨: 157
- ɳ·¢: 34
- Ìû×Ó: 15082
- ÔÚÏß: 1307.1Сʱ
- ³æºÅ: 1244132
- ×¢²á: 2011-03-24
- ÐÔ±ð: GG
- רҵ: ÓлúºÏ³É
- ¹ÜϽ: Óлú×ÊÔ´
2Â¥2012-02-14 19:48:54















»Ø¸´´ËÂ¥