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目前见到最好的ZnO文献综述(2005年-长达100页)
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5楼2007-01-08 17:31:41
2楼2007-01-08 16:41:50
3楼2007-01-08 17:06:47
★★★ 三星级,支持鼓励
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imrking(金币+1):谢谢
imrking(金币+1):谢谢
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A comprehensive review of ZnO materials and devices Ü. Özgür,a Ya. I. Alivov, C. Liu, A. Teke,b M. A. Reshchikov, S. Doğan,c V. Avrutin, S.-J. Cho, and H. Morkoçd Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284-3072 Received 2 February 2005; accepted 13 June 2005; published online 30 August 2005 The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy 60 meV which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn Proc. Phys. Soc. London 47, 836 1935, studies of its vibrational properties with Raman scattering in 1966 by Damen et al. Phys. Rev. 142, 570 1966, detailed optical studies in 1954 by Mollwo Z. Angew. Phys. 6, 257 1954, and its growth by chemical-vapor transport in 1970 by Galli and Coker Appl. Phys. Lett. 16, 439 1970. In terms of devices, Au Schottky barriers in 1965 by Mead Phys. Lett. 18, 218 1965, demonstration of light-emitting diodes 1967 by Drapak Semiconductors 2, 624 1968, in which Cu2O was used as the p-type material, metal-insulator-semiconductor structures 1974 by Minami et al. Jpn. J. Appl. Phys. 13, 1475 1974, ZnO/ZnSe n-p junctions 1975 by Tsurkan et al. Semiconductors 6, 1183 1975, and Al/Au Ohmic contacts by Brillson J. Vac. Sci. Technol. 15, 1378 1978 were attained. The main obstacle to the development of ZnO has been the lack of reproducible and low-resistivity p-type ZnO, as recently discussed by Look and Claflin Phys. Status Solidi B 241, 624 2004. While ZnO already has many industrial applications owing to its piezoelectric properties and band gap in the near ultraviolet, its applications to optoelectronic devices has not yet materialized due chiefly to the lack of p-type epitaxial layers. Very high quality what used to be called whiskers and platelets, the nomenclature for which gave way to nanostructures of late, have been prepared early on and used to deduce much of the principal properties of this material, particularly in terms of optical processes. The suggestion of attainment of p-type conductivity in the last few years has rekindled the long-time, albeit dormant, fervor of exploiting this material for optoelectronic applications. The attraction can simply be attributed to the large exciton binding energy of 60 meV of ZnO potentially paving the way for efficient room-temperature exciton-based emitters, and sharp transitions facilitating very low threshold semiconductor lasers. The field is also fueled by theoretical predictions and perhaps experimental confirmation of ferromagnetism at room temperature for potential spintronics applications. This review gives an in-depth discussion of the mechanical, chemical, electrical, and optical properties of ZnO in addition to the technological issues such as growth, defects, p-type doping, band-gap engineering, devices, and nanostructures. © 2005 American Institute of Physics. DOI: 10.1063/1.1992666 |
4楼2007-01-08 17:21:38
