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caoxiafei

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研发工程师-Topcon/HJT电池

[交流] Work Function of FTO and ITO 已有1人参与

Work function of fluorine doped tin oxide
Abstract:
Fluorine doped tin oxide FTO is a commonly used transparent conducting oxide in optoelectronic device applications. The work function of FTO is commonly cited as 4.4 eV, which is incommensurate with recent device performance results. Using x-ray photoelectron spectroscopy, the authors measured the work function of commercial FTO to be 5.0 eV. UV ozone treatment was found to increase the work function by 0.1 eV due to surface band bending. The origins of the much lower work function previously reported are also discussed and are found to be a result of carbon contamination and UV induced work function lowering.
Work function of indium tin oxide transparent conductor measured by photoelectron spectroscopy
Abstract:
We used ultraviolet and x-ray photoelectron spectroscopy XPS and UPS techniques to directly measure absolute values of vacuum work function of indium tin oxide ITO thin films. We obtained a work function of 4.4–4.5 eV which is lower than the commonly cited value. These values do not change substantially by heating and Ar ion sputtering. The atomic concentrations of each element in ITO, measured with XPS, are also quite stable under heat treatment and ion sputtering.

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yuan999

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小木虫(金币+0.5):给个红包,谢谢回帖
nofrunolif(金币+1): 欢迎来本版交流! 2011-11-15 18:34:31
FTO和ITO的功函数与很多因素有关,包括材料本身,掺入元素的浓度,一般认为:ITO的功函数为4.5eV,经过氧等离子处理后在4.8左右,FTO也差不多,很多文献报道的不一样,但是相差 不是很大
我~心~依~旧
2楼2011-11-15 12:19:42
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caoxiafei

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研发工程师-Topcon/HJT电池

功函的大小,对FTO和ITO基的器件的电接触影响很大,N型ZnO的功函为4.5eV,ITO功函为4.5eV,能形成很好的欧姆接触,但是FTO功函为5.0,显然是明显的肖特基接触,这在光电器件中是非常重要的!

正如浅能级和深能级对于半导体电导贡献上,是存在相当大的差距的!
3楼2011-11-15 20:38:30
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