Al:ZnO(AZO) films were deposited on glass substrate with inborn surface texture by magnetron sputtering at a power density as high as 7Wcm-2. The sputtering parameters such as argon working pressure and substrate temperature were varied from 1.0 to 6.0Pa and from room temperature to 500℃, respectively. All the films exhibit perfect (002) orientations with very weak (004) peaks measured by X-ray diffraction(XRD). A linear relationship between the growth rate of AZO film and working pressure was found. The film deposited at working pressure of 2.0 Pa showed the best electrical properties of all AZO films produced at room substrate temperature. And the root-mean-square (RMS) roughness tested by atomic force microscopy(AFM) was 37.50 nm , indicated that surface texture was successfully fabricated without further etching process. Substrate temperature played a favorable effect on the electrical properties. Resistivity low as 9.044×10-4 ohm·cm was obtained at 500 ℃ and 2.0 Pa, the corresponding mobility and carrier concentration were 20.45 m2/Vs and 3.379×1020 cm-3, respectively. The grain size and the surface texture size tested by scanning electron microscopy also peaked at 500 ℃. All the films showed a relatively high transmittance about 80%.
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