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应助: 0 (幼儿园)
散金: 84
红花: 2
帖子: 21
在线: 21.6小时
虫号: 1375603
注册: 2011-08-22
性别: GG
专业: 凝聚态物性 II ：电子结构

[交流] 德国亥姆霍兹Dresden研究中心招聘材料科学、离子束应用方面的博士生和博士后已有3人参与

德国亥姆霍兹Dresden研究中心（www.helmholtz.de and www.hzdr.de）招聘材料科学、离子束应用方面的博士生和博士后，同时欢迎国家公派读博申请者。研究方向如下（课题组主页http://www.hzdr.de/db/Cms?pOid=32703&pNid=138）但不局限于此

Open positions
In HZDR, a Nachwuchsgruppe, supported by Helmholtz-Gemeinschaft (the largest research association in Germany), is going to run from 2011 for five years. The research focus is “ion beam processed functional materials for spintronics and photovoltaics”. Within this theme, we are looking for PhD or Master (Diploma) students working on the following topics:

(1) Numerical simulation of the melting process of semiconductors under pulsed laser irradiation and of the dopant redistribution
Ion implantation plus pulsed laser annealing offer a unique, non-equilibrium approach to design highly doped semiconductors, which are key materials for semiconductor spintronics and the new generation of solar cells with a conceptual innovation. You will understand the physics of materials under pulsed laser irradiation with an extreme high power (108 W/cm2) and write code to simulate the phenomena and compare with the data published in literature.

(2) Magnetic, structural and magneto-transport properties in Mn doped Ge
In the last years, ferromagnetism in Ge has been obtained by Mn doping. We are preparing Mn doped Ge by ion implantation and transient annealing methods, such as flash lamp and pulsed laser. Your task is to correlate the structural and magnetic/transport properties of the synthesized materials, consequently, to optimize implantation and annealing parameters. The ultimate goal is to prepare Ge-based ferromagnetic semiconductors.

(3) Highly mismatched semiconductor alloys
Here “mismatch” refers the electronegatively and/or covalent radius of the dopants compared with the host elements, for instance, N dopants in GaAs. The incorporation of N inside GaAs can significantly reduce the bandgap of GaAs. In the case of ZnTe, the incorporation of O can produce an additional band between the original conduction and valence bands. Your work will concentrate on the preparation of highly mismatched semiconductor alloys by ion implantation and transient annealing methods, as well as the understanding of their optical properties.

You will work in an international and dynamic group with the possibility of continuing PhD study in the same group/institute. We are located in the Sachsen “Silicon Valley”, which also offer work chances in industries after this thesis training.

Contact: Prof. Dr. Manfred Helm (m.helm@hzdr.de)/ Dr. Shengqiang Zhou (s.zhou@hzdr.de)
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德国亥姆霍兹联合会（www.helmholtz.cn）原名"大科学中心联合会"，是德国最大的科研团体。联合会每年获得的科研经费总额超过33亿欧元，其中来自政府渠道的经费相当于德国另外三大科研团体：马克斯.普朗克学会、莱布尼兹联合会及弗劳恩霍夫协会三家的总和，联合会下属有17个国际著名的研究中心，员工总数达到31,000名。联合会在国际学术界代表着德国的国家科技研究形象，主要特征是围绕大型科研设备展开国际一流的大科学研究，在德国境内以及国际科技界拥有很多协作伙伴，充分体现着科技进步、创新应用相结合并进而直接影响社会发展远景的鲜明特色。联合会继承了著名的自然科学家赫尔曼·冯·亥姆霍兹（1821-1894）的科学精神。

德国亥姆霍兹国家研究中心联合会作为德国最大的科研机构之一，是国家留学基金管理委员会的重要合作伙伴。对于有志于去亥姆霍兹系统深造的中国学生和学者，包括博士研究生，博士交换生，和博士后，CSC将提供全程全额的资助。

有意者请联系Contact: Prof. Dr. Manfred Helm (m.helm@hzdr.de)/ Dr. Shengqiang Zhou (s.zhou@hzdr.de)

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