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±¡Ä¤(film)´Ó[111]µ½[100]½á¹¹µÄ±ä»¯Ò²±»ÈÏΪÊǼ¤»îÄÜ(activation energy)µÄ¸Ä±ä¡£»ùƬζÈ(substrate temperature)Éý¸ßÓÐÖúÓÚ¼õÉÙ±¡Ä¤ÖеÄÑõº¬Á¿£¬Ê¹Ñõ¿Õλ(oxygen vacancies)Ôö¼Ó£¬¶øÑõ¿ÕλµÄÔö¼ÓÓÐÖúÓÚÌá¸ß±¡Ä¤ÖÐÀë×ÓµÄÇ¨ÒÆÂÊ(mobility)£¬¼ÓËÙÀë×ÓÀ©É¢(diffusion)£»

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sltmac(½ð±Ò+1): ¸Ðл½»Á÷~ 2011-07-30 13:17:14
The change of the  structure from the plane [111] to [100] of the film was also considered as the change of the activation energy. The increase of the substrate temperature  is helpful to reduce the oxygen content of the film and thus increase the oxygen vacancies. And the  increase of the oxygen vacancies conduce£ó to¡¡improve the mobility and diffusion speed of ions£®
7Â¥2011-07-27 11:00:10
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sltmac(½ð±Ò+1): ллӦÖú~ 2011-07-27 00:02:10
Ë®ÖÐÂÌÖÞ(½ð±Ò+8, ·­ÒëEPI+1): лл ÕæµÄлл 2011-07-30 16:06:27
The structural change of film from 111 to 100 is also regarded as the change of activation energy¡£The  increase of substrate temperature can induce the oxygencontent of film and increase the oxygen vacancies  which in turn can increase the ion mobility and facilitate ion diffusion of film¡£
2Â¥2011-07-26 21:36:16
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3Â¥2011-07-26 21:37:10
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sltmac(½ð±Ò+1): ¸ÐлӦÖú~ 2011-07-27 09:19:40
Ë®ÖÐÂÌÖÞ(½ð±Ò+7): лл 2011-07-31 19:28:34
±¡Ä¤(film)´Ó[111]µ½[100]½á¹¹µÄ±ä»¯Ò²±»ÈÏΪÊǼ¤»îÄÜ(activation energy)µÄ¸Ä±ä¡£»ùƬζÈ(substrate temperature)Éý¸ßÓÐÖúÓÚ¼õÉÙ±¡Ä¤ÖеÄÑõº¬Á¿£¬Ê¹Ñõ¿Õλ(oxygen vacancies)Ôö¼Ó£¬¶øÑõ¿ÕλµÄÔö¼ÓÓÐÖúÓÚÌá¸ß±¡Ä¤ÖÐÀë×ÓµÄÇ¨ÒÆÂÊ(mobility)£¬¼ÓËÙÀë×ÓÀ©É¢(diffusion)£» The change of the film structure from ¡¾111¡¿ to ¡¾100¡¿ is also considered as the change of activation energy¡£The  increase of substrate temperature is helpful for the decrease of oxygen content in film and thus increase the oxygen vacancies  which is condusive to enhancing ion mobility and facilitating ion diffusion in film¡£
4Â¥2011-07-27 08:55:57
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