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nature nanotechnology最新 液相法制备双层三层石墨烯
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Bilayer and trilayer graphene with controlled stacking is emerging as one of the most promising candidates for postsiliconnanoelectronics. However, it is not yet possible to produce large quantities of bilayer or trilayer graphene withontrolled stacking, as is required for many applications. Here, we demonstrate a solution-phase technique for theproduction of large-area, bilayer or trilayer graphene from graphite, with controlled stacking. The ionic compounds iodinechloride (ICl) or iodine bromide (IBr) intercalate the graphite starting material at every second or third layer, creatingsecond- or third-stage controlled graphite intercolation compounds, respectively. The resulting solution dispersions arespecifically enriched with bilayer or trilayer graphene, respectively. Because the process requires only mild sonication, itproduces graphene flakes with areas as large as 50 mm2. Moreover, the electronic properties of the flakes are superior tothose achieved with other solution-based methods; for example, unannealed samples have resistivities as low as ∼1 kVand hole mobilities as high as ∼400 cm2 V–1 s–1. The solution-based process is expected to allow high-throughputproduction, functionalization, and the transfer of samples to arbitrary substrates. [ Last edited by taozhikai on 2011-7-7 at 00:20 ] |
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tweezers2楼
2011-07-07 05:36
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2011-07-07 08:20
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2011-07-07 09:09
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2011-07-07 09:10
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2011-07-07 09:16
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2011-07-07 14:35
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2011-07-07 15:10
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2011-07-07 16:20
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