| 查看: 646 | 回复: 2 | ||
[求助]
Sputtering
|
|
谁能翻译一下 3. Sputtering to Form Thin Films at Low Substrate Temperature We will reveal a plasma-based method to deposit refractory metals from a target onto a substrate at room temperature. The key is to use new ion-surface physics that goes beyond simple thermal evaporation. It’s a new paradigm called sputtering. In short, it is a kind of atomic “sand blasting,” where the “sand” is rare gas ions. The “sand,” or rare gas atoms, receive their energy by being accelerated in an electric field. These energetic ions collide with a surface and knock off surface atoms into the gaseous state. It’s a two step process involving: one, ion bombardment of a target surface (atomic scale sandblasting) which removes target atoms; and two, the transport of this target material and subsequent deposition or condensation of the target atoms on the substrate where they stick, forming a thin film. Use of rare gas ions allows for no chemical reactions between the parent gas and the target atoms, insuring a film composed primarily of target material. The transport of atoms from one location to another can best be done in a partial vacuum (10-4 Torr) where gas phase collisions are few and target atoms are easily transported over practical distances. The sputtered material, or target, can be elemental or an alloy, e.g., Al-Si-Cu used in IC wiring. See Figure 4-15 for a cartoon model of plasma sputtering. The details of ion-surface interactions will be encompassed by an empirical constant, termed the sputtering coefficient, (upper case “S”—recall that lower case “s” is the sticking coefficient). The sputtering coefficient S will be a function of the target material, T, and the bombarding ion energy, E+, as well as the particular type of projectile ion, P. Hence, we might represent all this complexity by a sputtering coefficient, SPT(E+). Plots of SPT versus projectile ion energy have been measured empirically and cataloged. In a sputtering reactor, atoms are physically removed from the target and re-deposited elsewhere in the reactor, for example on the walls. Of course good sputter reactor design would insure that most of the sputtered material from the target will in fact be deposited on the substrate, forming a uniform thin film of the desired thickness and properties. Figure 4-16 shows a slightly more detailed sputtering reactor, including the various regions of the plasma in the reactor. Brief descriptions of each of the three regions follow the figure. These regions will be studied in detail in a future chapter on DC plasmas. |
回复此楼» 猜你喜欢
070303 总分349求调剂
已经有5人回复
-
309求调剂
已经有5人回复
-
070300化学学硕求调剂
已经有5人回复
-
277材料科学与工程080500求调剂
已经有3人回复
-
0703化学调剂 ，六级已过，有科研经历
已经有5人回复
-
环境工程调剂
已经有4人回复
-
材料专硕306英一数二
已经有4人回复
-
326求调剂
已经有3人回复
-
0854控制工程 359求调剂 可跨专业
已经有8人回复
-
国自科面上基金字体
已经有6人回复
8814402
至尊木虫 (职业作家)
- 翻译EPI: 509
- 应助: 18 (小学生)
- 贵宾: 0.381
- 金币: 12916.1
- 散金: 47
- 红花: 16
- 帖子: 4183
- 在线: 357.8小时
- 虫号: 1184404
- 注册: 2011-01-06
- 专业: 药物学其他科学问题
【答案】应助回帖
★ ★
ringzhu(金币+2): O(∩_∩)O~ 估计博士哥哥觉得5个金币的长度~~ 2011-06-02 11:30:58
ringzhu(金币+2): O(∩_∩)O~ 估计博士哥哥觉得5个金币的长度~~ 2011-06-02 11:30:58
|
Sputtering to Form Thin Films at Low Substrate Temperature 在低基底温度下通过喷溅涂覆法形成薄膜 We will reveal a plasma-based method to deposit refractory metals from a target onto a substrate at room temperature.我们将揭示一种在室温下将难熔金属从靶子沉着到基底上的基于等离子体的方法。The key is to use new ion-surface physics that goes beyond simple thermal evaporation. 方法的关键是运用新的离子表面物理学技术，这一技术远胜过简单的热蒸发。It’s a new paradigm called sputtering.这是一种被称作喷溅涂覆法的新的操作范式。 |
2楼2011-06-01 17:32:47
zerohead
禁虫 (职业作家)
- 翻译EPI: 466
- 应助: 1 (幼儿园)
- 贵宾: 0.301
- 金币: 8727.8
- 散金: 850
- 红花: 15
- 沙发: 10
- 帖子: 3768
- 在线: 471.7小时
- 虫号: 1041741
- 注册: 2010-06-14
- 性别: GG
- 专业: 逻辑学
3楼2011-06-02 13:26:10
