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| Fabrication ofGNRdevices.Welocated the GNRs withAFMand recorded their locations relative to the prefabricated Pt/W markers. The source–drain electrode pattern was then designed to provide electrical contact to the GNRs; this was carried out by electron beam lithography, 20-nm Pd metal deposition and lift off.The devices were then annealed in Ar at 220 uC for 15 min to improve the contact quality. Electrical characterization of the devices was carried out both in air and in vacuum using a semiconductor analyser (Agilent 4156C). |
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2楼2011-06-01 09:49:41