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王灵杰

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[求助] 求翻译哈!!!(材料类,多壁纳米碳管)

Preparation of GNRs. We dispersed 1 mg of MWCNTsin 10 ml of 1% Tween 20 aqueous solution by sonication for 5 min and then centrifugation at 16,400g for 10 min to remove aggregates. The MWCNT suspension was deposited onto a Si substrate pretreated with 3-aminopropyltriethoxysilane (APTES, 12 ml in 20 ml ofH2O), rinsed with water and then blow-dried. The sample was then calcined at 350 uC for 10 min to remove the Tween 20. A PMMA solution (relative molecular mass, Mw5495,000; 5% in anisole) was spin-coated on MWCNTs on the substrate at 3,000 rounds per minute for 1 min and then baked at 170 uC for 2 h on a hot plate. ThePMMA–MWCNT film was peeled off in 1MKOHsolution at 80 uC (ref. 21). Then the film was rinsed with water and printed onto a Si substrate. To make the film well-adhered to the Si substrate, we heated the sample at 80 uC for 10 min in an oven. Ten-watt Ar plasma was used to etch the PMMA–MWCNT film at the base pressure of 40 mTorr. After etching, we lifted thePMMAfilm using water and then adhered it to an APTES-treated, 500-nm SiO2/Si substrate with a prefabricated Pt/W marker array. After the PMMA had been removed using acetone vapour21, the obtained sample was calcined at 300 uC for 10 min to remove the residue of PMMA

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sltmac

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王灵杰(金币+100, 翻译EPI+1): 谢谢,我看到这几段都是你翻译的额,感谢啊 2011-06-01 11:57:09
Mally89(金币+2): 感谢应助!~ 2011-06-01 18:41:54
制备GNR过程如下,分散1mg MWCNTs 于10~20mL水中,超声5min,再以16400转/分的速率离心10min以移除聚集物。得到的MWCNT 分散液沉积到Si用APTES,(12 ml 溶于 20 ml H2O)预处理过的Si基板上,用水冲洗后吹干,样品在350℃下烧结10min以去除杂质。A PMMA溶液(分子量,Mw=5495000;苯甲醚中的浓度为5%)以3000转/分在的速率旋涂在附有MWCNT的基板上,旋涂1min,然后在一块加热板上170℃烘干2h。PMMA–MWCNT膜通过1M 氢氧化钾溶液在80℃剥离(参考文献21),然后膜通过水冲洗再印迹到Si基板上。为了使膜很好地附着在Si基板上,我们把样品在马弗炉中80℃加热10min,10瓦的Ar等离子在40毫托压力下用来蚀刻PMMA–MWCNT膜,刻蚀完后,用水洗涤PMMA膜然后将其粘附在经APTES处理过的500nm 的SiO2/Si基板。当PMMA用丙酮移除后,得到的样品在300℃下烧结10min以移除剩余的PMMA。
云淡风轻
2楼2011-06-01 10:25:48
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