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北京石油化工学院2026年研究生招生接收调剂公告
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young1105

金虫 (初入文坛)

young

[求助] 英文摘要润色(电子类)

本人有一篇中文摘要,个人感觉翻译的不是很好,希望虫友们润色一下,谢谢

       以典型的Si基n+-p-n-n+双极晶体管为对象,通过微波注入方式,从器件内部电场强度、电流密度和温度的分布变化出发研究其在高功率微波作用下的内在失效机理。利用线性拟合方法得到了损伤功率和脉宽之间的关系。研究表明,高功率微波对双极晶体管损伤部位是B-E结。烧毁点升温主要集中在信号负半周着信号注入幅度的不断增加,在正半周期烧毁点温度下降幅度越来越慢,注入幅度增加到一定值时,温度有小幅升高。损伤功率和脉宽公式和短脉冲经验公式符合的很好,从而验证了器件模型的合理性。
In this paper the study of high power microwave injection effect and internal damage mechanism of the typical n+-p-n-n+ structure bipolar transistor is investigated from the variation distribution of the electric field, the current density and the temperature. The relationship between the burnout time and the damage power is obtained using the curve fitting method. Results indicate that the damage position of the bipolar transistor is the base-emitter junction where the temperature rising is focus in the negative half-period. In the positive half-period, as the injected signal peak increases, the magnitude of the temperature falling in the damage position decreases but the temperature rises slightly when the injected singal peak increases to a certain value. The relationship of the damage power and the burnout time fits well with the empirical formulas which proved the accuracy of our model.

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young
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zerohead

禁虫 (职业作家)

【答案】应助回帖

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young1105(金币+10, 翻译EPI+1): 3Q~能否帮忙把摘要都润色一下,我的要求是不是太过分了,呵呵 2011-04-14 21:52:10
sltmac(金币+20): 谢谢交流~~~ 2011-04-18 11:16:55
The first sentence is modified as below:

以典型的Si基n+-p-n-n+双极晶体管为对象,通过微波注入方式,从器件内部电场强度、电流密度和温度的分布变化出发研究其在高功率微波作用下的内在失效机理。

In this paper, the internal damage mechanism of the typical Si based n+-p-n-n+ structured bipolar transistor under high power microwave injection is investigated by studying the variation and distribution of the electric field, current density and temperature inside the transistor.
2楼2011-04-14 20:11:27
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young1105

金虫 (初入文坛)

young

能否帮忙看一下剩下的摘要翻译啊,呵呵,谢谢你
young
3楼2011-04-18 09:37:52
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