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In this paper the study of high power microwave injection effect and internal damage mechanism of the typical n+-p-n-n+ structure bipolar transistor is investigated from the variation distribution of the electric field, the current density and the temperature. The relationship between the burnout time and the damage power is obtained using the curve fitting method. Results indicate that the damage position of the bipolar transistor is the base-emitter junction where the temperature rising is focus in the negative half-period. In the positive half-period, as the injected signal peak increases, the magnitude of the temperature falling in the damage position decreases but the temperature rises slightly when the injected singal peak increases to a certain value. The relationship of the damage power and the burnout time fits well with the empirical formulas which proved the accuracy of our model.
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The first sentence is modified as below:

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In this paper, the internal damage mechanism of the typical Si based n+-p-n-n+ structured bipolar transistor under high power microwave injection is investigated by studying the variation and distribution of the electric field, current density and temperature inside the transistor.
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