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III-Nitride Devices and Nanoengineering
by zhe chuan feng

     The book is organized for a wide range of audiences and covers each of the basic and critical aspects of III-Nitrides science and technology. Each chapter, written by experts in the field, reviews the important topics and achievements in recent years, discusses progresses made by different groups, and suggests further works needed. This book provides useful information to the device and nano-scale process, fabrication of LEDs, LDs, photodetectors and nano-devices, characterization, application and development on the III-Nitrides semiconductor devices and nanoengineering.

     This book consists of 15 well-written review chapters and the topics of the book include: (1) An overview of the development of major light sources: From light bulbs to solid state lighting, (2) High pressure bulk crystal growth of (Ga,Al)N, (3) Structural and optical investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition, (4) MOCVD growth and efficiency improvement for ultraviolet light emitting diodes, (5) Fabrication of GaN light emitting diodes by laseroff technique, (6) High-resolution electron microscopy observations of GaN-based laser diodes, (7) Growth and development of III-nitride photodetectors, (8) Laser diodes grown on bulk GaN substrate, (9) III-Nitride lighting emitting diodes on Si, (10) Nitride Microdisplay and Micro-scale Light Emitting Diode Arrays, (11) III-nitride films and devices on Lithium metal oxides by molecular beam epitaxy, (12) III-Nitride light-emitting devices on patterned sapphire substrates, (13) Bandgap engineering of III-nitride devices on low-defect substrates, (14) III-Nitride nano-materials: growth and properties and (15) Recent trends in Indium Nitride nano-materials.

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[ Last edited by albertzheng on 2010-12-30 at 16:45 ]

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III-Nitride Devices and Nanoengineering
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