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半导体超晶格中新的输运现象
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New Transport Phenomenon in a Semiconductor "Superlattice"(半导体超晶格中新的输运现象) 作者：L. Esaki and L. L. Chang 注释：Phys. Rev. Lett. 33, 495–498 (1974) 摘要/内容： We report electronic transport properties in a GaAs-AlAs periodic structure known as a "superlattice" prepared by a molecular-beam epitaxy. Its differential conductance in the superlattice direction first gradually decreases, followed by a rapid drop to negative values, then, at high fields, exhibits an oscillatory behavior with respect to applied voltages. This observation is interpreted in terms of the formation and expansion of a high-field domain. The voltage period of the oscillation provides the energy of the first-excited band which is in good agreement with that predicted by the theory. |
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