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The change of nanocrystalline silicon branches size and pore structure and composition could be the main reason for the increase in PL intensity of sample 2. Ô¸ÒâÒª±í´ïµÄÊÇ£ºÄÉÃ×¹èÖù£¨nanocrystalline silicon branches size £©ºÍ¿×½á¹¹ºÍ×é³É£¨pore structure and composition£©µÄ¸Ä±ä¿ÉÄÜÊÇÑùÆ·2·¢¹âÇ¿¶È£¨PL intensity of sample 2£©ÔöÇ¿µÄÖ÷ÒªÔÒò¡£ |
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- ·ÒëEPI: 10
- Ó¦Öú: 15 (СѧÉú)
- ½ð±Ò: 2710.3
- É¢½ð: 1672
- ºì»¨: 19
- Ìû×Ó: 2147
- ÔÚÏß: 511.2Сʱ
- ³æºÅ: 336164
- ×¢²á: 2007-04-01
- ÐÔ±ð: MM
- רҵ: ÎÛȾ¿ØÖÆ»¯Ñ§
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