| ²é¿´: 447 | »Ø¸´: 1 | |||
| ±¾Ìû²úÉú 1 ¸ö ·ÒëEPI £¬µã»÷ÕâÀï½øÐв鿴 | |||
liping6065ͳæ (СÓÐÃûÆø)
|
[½»Á÷]
Çó¸÷λ´óϺ°ïæһ¾ä»°ÐÞ¸Ä
|
||
|
The change of nanocrystalline silicon branches size and pore structure and composition could be the main reason for the increase in PL intensity of sample 2. Ô¸ÒâÒª±í´ïµÄÊÇ£ºÄÉÃ×¹èÖù£¨nanocrystalline silicon branches size £©ºÍ¿×½á¹¹ºÍ×é³É£¨pore structure and composition£©µÄ¸Ä±ä¿ÉÄÜÊÇÑùÆ·2·¢¹âÇ¿¶È£¨PL intensity of sample 2£©ÔöÇ¿µÄÖ÷ÒªÔÒò¡£ |
» ²ÂÄãϲ»¶
08¹¤Ñ§ 309·ÖÇóµ÷¼Á
ÒѾÓÐ3È˻ظ´
»¹Óл¯¹¤¶þÂÖµ÷¼ÁµÄѧУÂð
ÒѾÓÐ26È˻ظ´
296Çóµ÷¼Á
ÒѾÓÐ4È˻ظ´
314Çóµ÷¼Á
ÒѾÓÐ8È˻ظ´
Ò»Ö¾Ô¸»ª¶«Ê¦·¶ÉúÎïѧ326·Ö£¬Çóµ÷¼Á
ÒѾÓÐ3È˻ظ´
086003µ÷¼ÁÇóÖú
ÒѾÓÐ16È˻ظ´
Ò»Ö¾Ô¸085404£¬×Ü·Ö291£¬Ëļ¶Òѹý£¬Çóµ÷¼Á
ÒѾÓÐ12È˻ظ´
һ־Ը³¶«´óѧ071000ÉúÎïѧѧ˶³õÊÔ·ÖÊý276Çóµ÷¼Á
ÒѾÓÐ21È˻ظ´
085600²ÄÁÏÓ뻯¹¤301·ÖÇóµ÷¼ÁԺУ
ÒѾÓÐ30È˻ظ´
Ò»Ö¾Ô¸Ö£ÖÝ´óѧ 22408 305·ÖÇóµ÷¼Á
ÒѾÓÐ3È˻ظ´

mtzh
¾èÖú¹ó±ö (ÖøÃûдÊÖ)
- ·ÒëEPI: 10
- Ó¦Öú: 15 (СѧÉú)
- ½ð±Ò: 2710.3
- É¢½ð: 1672
- ºì»¨: 19
- Ìû×Ó: 2147
- ÔÚÏß: 511.2Сʱ
- ³æºÅ: 336164
- ×¢²á: 2007-04-01
- ÐÔ±ð: MM
- רҵ: ÎÛȾ¿ØÖÆ»¯Ñ§
2Â¥2010-09-26 09:09:46













»Ø¸´´ËÂ¥