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Submissions to: Computational Physics Condensed Matter History of Physics Instrumentation and Detectors received from Tue 4 Apr 06 20:00:02 GMT to Wed 5 Apr 06 20:00:03 GMT ------------------------------------------------------------------------------ ------------------------------------------------------------------------------ \\ Paper: physics/0604033 Date: Wed, 5 Apr 2006 12:08:39 GMT (21kb) Title: Computation of Electrostatic Field near Three-Dimensional Corners and Edges Authors: N. Majumdar, S. Mukhopadhyay Comments: Presented in International Conference on Computational and Experimental Engineering and Sciences held at IIT Madras, Chennai, India, during 1-6 December, 2005 Subj-class: Computational Physics; General Physics \\ Theoretically, the electric field becomes infinite at corners of two and three dimensions and edges of three dimensions. Conventional finite-element and boundary element methods do not yield satisfactory results at close proximity to these singular locations. In this paper, we describe the application of a fast and accurate BEM solver (which usesexact analytic expressions to compute the effect of source distributions on flatsurfaces) to compute the electric field near three-dimensional corners and edges. Results have been obtained for distances as close as 1$\mu m$ near the corner/edge and good agreement has been observed between the present results and existing analytical solutions. \\ ( http://arXiv.org/abs/physics/0604033 , 21kb) ------------------------------------------------------------------------------ \\ Paper: physics/0604034 Date: Wed, 5 Apr 2006 12:16:45 GMT (40kb) Title: Development of a BEM Solver using Exact Expressions for Computing the Influence of Singularity Distributions Authors: S. Mukhopadhyay, N. Majumdar Comments: Presented in International Conference on Computational and Experimental Engineering and Sciences held at IIT Madras, Chennai, India during 1-6 December, 2005 Subj-class: Computational Physics; General Physics \\ Closed form expressions for three-dimensional potential and force field due to singularities distributed on a finite flat surface have been used to develop a fast and accurate BEM solver. The exact expressions have been investigated in detail and found to be valid throughout the complete physical domain. Thus, it has been possible to precisely simulate the complicated characteristics of the potential and force field in the near-field domain. The BEM solver has been used to compute the capacitance of a unit square plate and a unit cube. The obtained values have compared well with very accurate values of the capacitances available in the literature. \\ ( http://arXiv.org/abs/physics/0604034 , 40kb) ------------------------------------------------------------------------------ \\ Paper: physics/0604035 Date: Wed, 5 Apr 2006 12:54:45 GMT (201kb) Title: Computation of Electrostatic Properties of 3D MEMS Structures Authors: N. Majumdar, S. Mukhopadhyay Comments: Presented in International Conference on MEMS and Semiconductor Nanotechnology held at IIT Kharagpur, Kharagpur, India during 20-22 December, 2005 Subj-class: Computational Physics; General Physics \\ Micro-Electro-Mechanical Systems (MEMS) normally have fixed or moving structures with cross-sections of the order of microns ($\mu m$) and lengths of the order of tens or hundreds of microns. These structures are often plates or array of thin beams which, owing to their smallness, can be moved or deflected easily through the application of low voltages. Since electrostatic forces play a very major role in maneuvering these devices, a thorough understanding of the electrostatic properties of these structures is of critical importance, especially in the design phase of MEMS. In many cases, the electrostatic analysis of MEMS is carried out using boundary element method (BEM), while the structural analysis is carried out using finite element method (FEM). In this paper, we focus on accurate electrostatic analysis of MEMS using BEM. In particular, we consider the problem of computing the charge distribution and capacitance of thin conducting plates relevant to the numerical simulation of MEMS. The reason behind the accuracy of the solver is the fact that it uses closed-form analytic expressions that are valid seamlessly throughout the physical domain for computing the influence coefficients. Thus, it is possible to avoid one of the most serious approximations of the BEM, namely, the assumption that the effect of a charge distributed over a boundary element can be approximated by charge located at the centroid of the element. Comparison with other results available in the literature seems to indicate that the present results are more accurate than the existing ones. \\ ( http://arXiv.org/abs/physics/0604035 , 201kb) ------------------------------------------------------------------------------ \\ Paper: cond-mat/0604124 Date: Wed, 5 Apr 2006 16:25:26 GMT (156kb) Title: Critical behavior of the random-anisotropy model in the strong-anisotropy limit Authors: Francesco Parisen Toldin, Andrea Pelissetto, Ettore Vicari Comments: 24 pages, 13 figs Subj-class: Disordered Systems and Neural Networks \\ We investigate the nature of the critical behavior of the random-anisotropy Heisenberg model (RAM), which describes a magnetic system with random uniaxial single-site anisotropy, such as some amorphous alloys of rare earths and transition metals. In particular, we consider the strong-anisotropy limit (SRAM), in which the Hamiltonian can be rewritten as the one of an Ising spin-glass model with correlated bond disorder. We perform Monte Carlo simulations of the SRAM on simple cubic L^3 lattices, up to L=30, measuring correlation functions of the replica-replica overlap, which is the order parameter at a glass transition. The corresponding results show critical behavior and finite-size scaling. They provide evidence of a finite-temperature continuous transition with critical exponents $\eta_o=-0.24(4)$ and $\nu_o=2.4(6)$. These results are close to the corresponding estimates that have been obtained in the usual Ising spin-glass model with uncorrelated bond disorder, suggesting that the two models belong to the same universality class. We also determine the leading correction-to-scaling exponent finding $\omega = 1.0(4)$. \\ ( http://arXiv.org/abs/cond-mat/0604124, 156kb) ------------------------------------------------------------------------------ \\ Paper: cond-mat/0604126 Date: Wed, 5 Apr 2006 15:47:35 GMT (81kb) Title: Strong disorder renormalization group study of S=1/2 Heisenberg antiferromagnet layers/bilayers with bond randomness, site dilution and dimer dilution Authors: Yu-Cheng Lin, Heiko Rieger, Nicolas Laflorencie, and Ferenc Igloi Comments: 12 pages, 13 figures Subj-class: Disordered Systems and Neural Networks \\ Using a numerical implementation of strong disorder renormalization group, we study the low-energy, long-distance properties of layers and bilayers of $S = 1/2$ Heisenberg antiferromagnets with different type of disorder: bond randomness, site and dimer dilution. Generally the systems exhibit an ordered and a disordered phase separated by a phase boundary on which the static critical exponents appear to be independent of bond randomness in the strong disorder regime, while the dynamical exponent is a continuous function of the bond disorder strength. The low-energy fixed points of the off-critical phases are affected by the actual form of the disorder, and the disorder induced dynamical exponent depends on the disorder strength. As the strength of bond disorder is increased, there is a set of crossovers in the properties of the low-energy singularities. For weak disorder quantum fluctuations play the dominant role. For intermediate disorder non-localized disorder fluctuations are relevant, which become localized for even stronger bond disorder. We also present some quantum Monte Carlo simulations results to support the strong disorder renormalization approach. \\ ( http://arXiv.org/abs/cond-mat/0604126, 81kb) ------------------------------------------------------------------------------ \\ Paper: cond-mat/0604127 Date: Wed, 5 Apr 2006 11:49:12 GMT (207kb) Title: Excitation energy transfer between closely spaced multichromophoric systems: Effects of band mixing and intraband relaxation Authors: C. Didraga, V. A. Malyshev, and J. Knoester Comments: 13 pages, 6 PostScript figures Subj-class: Disordered Systems and Neural Networks; Materials Science \\ We theoretically analyze the excitation energy transfer between two closely spaced linear molecular J-aggregates, whose excited states are Frenkel excitons. The aggregate with the higher (lower) exciton band edge energy is considered as the donor (acceptor). The celebrated theory of F\"orster resonance energy transfer (FRET), which relates the transfer rate to the overlap integral of optical spectra, fails in this situation. We point out that in addition to the well-known fact that the point-dipole approximation breaks down (enabling energy transfer between optically forbidden states), also the perturbative treatment of the electronic interactions between donor and acceptor system, which underlies the F\"orster approach, in general loses its validity due to overlap of the exciton bands. We therefore propose a nonperturbative method, in which donor and acceptor bands are mixed and the energy transfer is described in terms of a phonon-assisted energy relaxation process between the two new (renormalized) bands. The validity of the conventional perturbative approach is investigated by comparing to the nonperturbative one; in general this validity improves for lower temperature and larger distances (weaker interactions) between the aggregates. We also demonstrate that the interference between intraband relaxation and energy transfer renders the proper definition of the transfer rate and its evaluation from experiment a complicated issue, which involves the initial excitation condition. \\ ( http://arXiv.org/abs/cond-mat/0604127, 207kb) ------------------------------------------------------------------------------ \\ Paper: cond-mat/0604130 Date: Wed, 5 Apr 2006 12:37:17 GMT (55kb) Title: Exciton Dephasing and Thermal Line Broadening in Molecular Aggregates Authors: D. J. Heijs, V. A. Malyshev, and J. Knoester Comments: 11 pages, 3 PostScript figures Subj-class: Disordered Systems and Neural Networks; Materials Science Journal-ref: J. Lumin. 119-120, 271 (2006) \\ Using a model of Frenkel excitons coupled to a bath of acoustic phonons in the host medium, we study the temperature dependence of the dephasing rates and homogeneous line width in linear molecular aggregates. The model includes localization by disorder and predicts a power-law thermal scaling of the effective homogeneous line width. The theory gives excellent agreement with temperature dependent absorption and hole-burning experiments on aggregates and more......................... 由于论坛限制，只能给这么多了！ |
2楼2006-04-07 03:59:41
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3楼2006-04-07 18:18:34