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| Another reason of PL enhancement after passivation may be attributed to a significant reduction in the number of non-radiative defects at nanocrystalline silicon surfaces in PS because of decrease of H-terminated. Moreover, we can¡¯t find the diffraction peak of DLC film. It may be caused that DLC films are amorphous due to the the low substrate temperature. |
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gary8812
Ìú¸Ëľ³æ (ÖøÃûдÊÖ)
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wypward(½ð±Ò+1):лл²ÎÓë 2010-06-10 17:36:04
liping6065(½ð±Ò+1, ·ÒëEPI+1): 2010-06-11 21:30:17
zehuac(½ð±Ò+2):²»´í£¬Ð»Ð»²ÎÓëÀ²£¬ÒÔºó»ý¼«Ó¦ÖúŶ 2010-06-16 13:13:01
liping6065(½ð±Ò+5): 2010-07-15 15:05:24
wypward(½ð±Ò+1):лл²ÎÓë 2010-06-10 17:36:04
liping6065(½ð±Ò+1, ·ÒëEPI+1): 2010-06-11 21:30:17
zehuac(½ð±Ò+2):²»´í£¬Ð»Ð»²ÎÓëÀ²£¬ÒÔºó»ý¼«Ó¦ÖúŶ 2010-06-16 13:13:01
liping6065(½ð±Ò+5): 2010-07-15 15:05:24
|
¸ÄÁË4¸öСµØ·½ Another reason for PL enhancement after passivation may be attributed to a significant reduction of the number of non-radiative defects at nanocrystalline silicon surfaces in PS because of the decrease of H-terminated. Moreover, we can¡¯t find the diffraction peak of DLC film. It may be caused that DLC films are amorphous due to the low substrate temperature. |
2Â¥2010-06-10 16:13:11














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