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liping6065

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Another reason of PL enhancement after passivation may be attributed to a significant reduction in the number of non-radiative defects at nanocrystalline silicon surfaces in PS because of decrease of H-terminated. Moreover, we can’t find the diffraction peak of DLC film. It may be caused that DLC films are amorphous due to the the  low substrate temperature.
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gary8812

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wypward(金币+1):谢谢参与 2010-06-10 17:36:04
liping6065(金币+1, 翻译EPI+1): 2010-06-11 21:30:17
zehuac(金币+2):不错,谢谢参与啦,以后积极应助哦 2010-06-16 13:13:01
liping6065(金币+5): 2010-07-15 15:05:24
改了4个小地方
Another reason for PL enhancement after passivation may be attributed to a significant reduction of the number of non-radiative defects at nanocrystalline silicon surfaces in PS because of the decrease of H-terminated. Moreover, we can’t find the diffraction peak of DLC film. It may be caused that DLC films are amorphous due to the low substrate temperature.
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