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liping6065

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[交流] 一句话,大虾帮忙看下语法顺便润色一下~~

Another reason of PL enhancement after passivation may be attributed to a significant reduction in the number of non-radiative defects at nanocrystalline silicon surfaces in PS because of decrease of H-terminated.

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态度决定一切:只要努力没有做不到的事~~
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jmxnqred

新虫 (小有名气)


wypward(金币+1):谢谢参与 2010-06-11 14:05:29
Another reason for the enhancement of PL after passivation process may attributed to a significant reduction  in the number of non-radiative defects in nanocrystalline silicon surfaces of PS result from the decrease of H-terminated.
2楼2010-06-09 18:53:26
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charleygan

至尊木虫 (著名写手)

chlgan


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zehuac(金币+2):不错,谢谢参与啦,以后积极应助哦 2010-06-14 12:18:34
去掉了"attributed to",加一个“resulted from"
Another reason of PL enhancement after passivation may be a significant reduction in the number of non-radiative defects at nanocrystalline silicon surfaces in PS resulted from the decrease of H-terminated.
3楼2010-06-11 11:40:47
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bancage

银虫 (小有名气)

感觉reason换成 cause比较好
4楼2010-06-11 13:34:51
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zehuac

木虫 (著名写手)

引用回帖:
Originally posted by charleygan at 2010-06-11 11:40:47:
去掉了"attributed to",加一个“resulted from"
Another reason of PL enhancement after passivation may be a significant reduction in the number of non-radiative defects at nanocrysta ...

reason和attributed to 有重复,同意该观点
努力就有收获
5楼2010-06-14 12:18:15
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noleg

金虫 (小有名气)

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发芽土豆(金币+2):谢谢参与 2010-06-23 08:37:33
liping6065(金币+2, 翻译EPI+1): 2010-07-15 15:06:28
Another reason for the enhancement of PL after passivation may owe to a significant reduction in the number of non-radiative defects on the surfaces of nanocrystalline silicon in PS, which was resulted from decrease of H-terminated.

which(表示reduction,应该不会有人误解吧)从句的列出,可使主句变得相对简洁。窃以为,用reason时,如果原因是用过程来描述的话,还是带for的好。

还有大家难道没有发现at用于surface这个搭配的错误吗?

[ Last edited by noleg on 2010-6-14 at 14:19 ]
6楼2010-06-14 14:16:04
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zerohead

禁虫 (职业作家)

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发芽土豆(金币+2):谢谢参与 2010-06-23 08:37:54
liping6065(金币+2): 2010-07-15 15:06:37
The PL enhancement by passivation may also be attributed to the significant reduction (in the number) of non-radiative defects at the nanocrystalline silicon surfaces in PS due to decreased H-termination.
7楼2010-06-23 02:34:43
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