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lcs2406木虫 (小有名气)
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| 随着MOS器件及MOS集成电路在航天环境和军事中的应用，在这些特殊的环境中，集成电路不可避免地会受到辐射。大量的测试结果表明，当MOS集成电路工怍在核辐射环境时，其电路性能会发生变化，如阈值电压的漂移、反向电流的增大、迁移率和跨导的降低等，严重时还会导致集成电路失效。目前国内外对辐照的研究及辐照加固的研究已成为了热点，主要从改进栅工艺和电路设计等方面来研究，以实现辐照加固。本文通过利用TiO2薄膜代替SiO2薄膜栅介质作为MOS结构的栅介质来实现辐照加固，其原理是电离辐照诱导Ti离子价态变化产生负电荷捕获中心补偿辐照产生的正电荷，实现辐照加固。 |
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lcs2406(金币+15): 2010-03-29 09:17
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As MOS devices and MOS integrated circuits in space environment, and military application, in these special circumstances, the IC will inevitably be affected by radiation. A large number of test results show that when the MOS integrated circuits worker will get sick in the nuclear radiation environment, its performance of the circuit will change, such as the threshold voltage drift, reverse current increases, the migration rate and the reduction of transconductance and so on, serious will also lead to IC failure. At home and abroad for studies and radiation exposure of reinforcement has become the hot spot, the main gate from the improved process and circuit design, etc. to study in order to achieve radiation reinforcement. In this paper, the use of TiO2 film instead of SiO2 gate dielectric film as a gate dielectric MOS structures irradiated to achieve reinforcement of its principle is that ionizing radiation-induced changes in valence Ti ions have negative charge trapping centers radiation induced positive charge of compensation to achieve irradiation reinforcement. |
2楼2010-03-28 16:08:50
sammi_deng
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本翻译已修改，请细看~ With the MOS devices and MOS integrated circuits using in the space environment and military application, the IC will inevitably be affected by radiation in these special circumstances. A large number of test results show that when the MOS integrated circuits work under the nuclear radiation environment,its performance of the circuit will be changed, such as the drift in threshold voltage, the increase in reverse current, the reduction in the migration rate and transconductance and so on. To make it worse, it will also lead to the failures in IC. By far,the studies on radiation and its exposure of reinforcement from home to abroad have become the hot spot. The main studies are from the improved process and circuit design and so on, in order to achieve radiation reinforcement. In this paper, the use of SiO2 film will be replaced by the TiO2 dielectric film which can be treated as dielectric MOS structures to achieve irradiated reinforcement.Its principle is that ionizing radiation induced changes in valence Ti ions that have negative charge trapping centers radiation induced positive charge of compensation,in order to achieve irradiation reinforcement. |
3楼2010-03-28 23:37:33
sammi_deng
金虫 (正式写手)
- 翻译EPI: 11
- 应助: 0 (幼儿园)
- 金币: 915.9
- 红花: 1
- 帖子: 360
- 在线: 53.5小时
- 虫号: 946500
- 注册: 2010-01-21
- 专业: 配位化学
本翻译已修改，请细看~
lcs2406(金币+15): 2010-03-29 09:22
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本翻译已修改，请细看~ With the MOS devices and MOS integrated circuits using in the space environment and military application, the IC will inevitably be affected by radiation in these special circumstances. A large number of test results show that when the MOS integrated circuits work under the nuclear radiation environment,its performance of the circuit will be changed, such as the drift in threshold voltage, the increase in reverse current, the reduction in the migration rate and transconductance and so on. To make it worse, it will also lead to the failures in IC. By far,the studies on radiation and its exposure of reinforcement from home to abroad have become the hot spot. The main studies are from the improved process and circuit design and so on, in order to achieve radiation reinforcement. In this paper, the use of SiO2 film will be replaced by the TiO2 dielectric film which can be treated as dielectric MOS structures to achieve irradiated reinforcement.Its principle is that ionizing radiation induced changes in valence Ti ions that have negative charge trapping centers radiation induced positive charge of compensation,in order to achieve irradiation reinforcement. |
4楼2010-03-28 23:37:58
