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【求助】态密度分析的时候， 什么是 金属诱导隙态？ 有怎么作用？！！
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| 我在查看相关文献的时候 看见文献中提到MIGS （metal induced gap states）即金属诱导隙态。请问各位虫友，什么是金属诱导带隙，如何判断出现了金属诱导带隙以及金属诱导带隙的出现能说明什么问题？ |
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fanchen021
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维基百科的解释，LZ参考下吧 In bulk semiconductor band structure calculations, it is assumed that the crystal lattice (which features a periodic potential due to the atomic structure) of the material is infinite. When the finite size of a crystal is taken into account, the wavefunctions of electrons are altered and states that are forbidden within the bulk semiconductor gap are allowed at the surface. Similarly, when a metal is deposited onto a semiconductor (by thermal evaporation (deposition), for example), the wavefunction of an electron in the semiconductor must match that of an electron in the metal at the interface. Since the Fermi levels of the two materials must match at the interface, there exists gap states that decay deeper into the semiconductor |
2楼2010-01-08 15:19:45