| ²é¿´: 617 | »Ø¸´: 9 | |||
| µ±Ç°Ö÷ÌâÒѾ´æµµ¡£ | |||
caoyn2588¹ÜÀíÔ±
|
[½»Á÷]
¡¾ÇóÖú¡¿£ÐÔÚ£Ó£éÖеÄ×÷Óã¿
|
||
|
Assume that the concentration of P atoms required in a silicon crystal is 10^17atoms/cm^3. Compare the concentrations of atoms in silicon and the concentrations of P atoms. What is the significance of these numbers from a technological viewpoint? Assume that density of silicon is 2.33g/cm^3. Çë¸ßÊÖÖ¸µã£º£ÐÔÚ£Ó£éÖеÄ×÷Óã¿ |
» ²ÂÄãϲ»¶
286Çóµ÷¼Á
ÒѾÓÐ7È˻ظ´
290Çóµ÷¼Á
ÒѾÓÐ5È˻ظ´
085600£¬320·ÖÇóµ÷¼Á
ÒѾÓÐ6È˻ظ´
292·Ö£¬²ÄÁÏÓ뻯¹¤£¬ÉêÇëµ÷¼Á
ÒѾÓÐ15È˻ظ´
0710ÉúÎïѧÇóµ÷¼Á
ÒѾÓÐ4È˻ظ´
Ò»Ö¾Ô¸±±¾©¿Æ¼¼£¬085601×Ü·Ö305Çóµ÷¼Á
ÒѾÓÐ5È˻ظ´
²ÄÁÏÇóµ÷¼Á
ÒѾÓÐ4È˻ظ´
Ò»Ö¾Ô¸Î÷°²½»´ó²ÄÁÏѧ˶£¨Ó¢Ò»Êý¶þ£©347£¬Çóµ÷¼Áµ½¸ß·Ö×Ó/²ÄÁÏÏà¹Ø×¨Òµ
ÒѾÓÐ9È˻ظ´
²ÄÁÏר˶322·Ö
ÒѾÓÐ6È˻ظ´
070300»¯Ñ§Çóµ÷¼Á
ÒѾÓÐ13È˻ظ´
draw
³¬¼¶°æÖ÷
![]()
![]()
![]()
![]()
- Ó¦Öú: 26 (СѧÉú)
- ½ð±Ò: 1014.3
- Ìû×Ó: 194
- ÔÚÏß: 135.3Сʱ
- ³æºÅ: 903380
- ×¢²á: 2009-11-15
- ÐÔ±ð: GG
- רҵ: ½ðÊô½á¹¹²ÄÁÏ
¡ï ¡ï ¡ï
hslining(½ð±Ò+2,VIP+0):ллָµã£¡ 12-29 20:08
caoyn2588(½ð±Ò+1,VIP+0): 12-30 19:57
hslining(½ð±Ò+2,VIP+0):ллָµã£¡ 12-29 20:08
caoyn2588(½ð±Ò+1,VIP+0): 12-30 19:57
| ÊÇҪ˵΢Á¿£¨10^-5£©µÄP²ôÔÓʹµç×ÓŨ¶ÈÉý¸ß°É¡£ |
2Â¥2009-12-29 19:32:32
caoyn2588
Ö÷¹ÜÇø³¤
![]()
![]()
![]()
![]()
- Ó¦Öú: 0 (Ó×¶ùÔ°)
- ½ð±Ò: 524.6
- É¢½ð: 25
- Ìû×Ó: 170
- ÔÚÏß: 144.7Сʱ
- ³æºÅ: 718686
- ×¢²á: 2009-03-09
- ÐÔ±ð: MM
- רҵ: ²ÄÁϱíÃæ¹¤³Ì
3Â¥2009-12-29 21:34:04
caoyn2588
ר¼Ò¹ËÎÊ
![]()
![]()
![]()
![]()
- Ó¦Öú: 0 (Ó×¶ùÔ°)
- ½ð±Ò: 524.6
- É¢½ð: 25
- Ìû×Ó: 170
- ÔÚÏß: 144.7Сʱ
- ³æºÅ: 718686
- ×¢²á: 2009-03-09
- ÐÔ±ð: MM
- רҵ: ²ÄÁϱíÃæ¹¤³Ì
4Â¥2009-12-29 21:37:54
wly1117
¶Ò»»¹ó±ö
![]()
![]()
![]()
![]()
- Ó¦Öú: 1 (Ó×¶ùÔ°)
- ½ð±Ò: 53.5
- Ìû×Ó: 140
- ÔÚÏß: 7.1Сʱ
- ³æºÅ: 847017
- ×¢²á: 2009-09-13
- רҵ: Áã¼þ¼Ó¹¤ÖÆÔì

5Â¥2009-12-29 21:51:22
draw
¹ÜÀíÔ±
![]()
![]()
![]()
![]()
- Ó¦Öú: 26 (СѧÉú)
- ½ð±Ò: 1014.3
- Ìû×Ó: 194
- ÔÚÏß: 135.3Сʱ
- ³æºÅ: 903380
- ×¢²á: 2009-11-15
- ÐÔ±ð: GG
- רҵ: ½ðÊô½á¹¹²ÄÁÏ
6Â¥2009-12-30 13:47:01
ayaku
Ö÷¹ÜÇø³¤
![]()
![]()
![]()
![]()
- Ó¦Öú: 0 (Ó×¶ùÔ°)
- ½ð±Ò: 37.4
- Ìû×Ó: 51
- ÔÚÏß: 53.9Сʱ
- ³æºÅ: 125193
- ×¢²á: 2005-12-06
- ÐÔ±ð: GG
- רҵ: ½ðÊô½á¹¹²ÄÁÏ
112
¡ï ¡ï
caoyn2588(½ð±Ò+1,VIP+0): 12-30 20:02
caoyn2588(½ð±Ò+1,VIP+0): 12-30 20:02
caoyn2588(½ð±Ò+1,VIP+0): 12-30 20:02
caoyn2588(½ð±Ò+1,VIP+0): 12-30 20:02
|
PºËÍâÓÐ5¸öµç×Ó£¬SiÓÐ4¸öµç×Ó£¬°ÑP²ôÔÓµ½SiÀïÃæ£¬SiÀïµç×ÓŨ¶ÈÔö¸ß£¬±íÏÖ¸ºÐÔ¡£ n-type semiconductors are made from crystalline sillicon that has been 'doped' with tiny quantities of an impurity (usually phosphorus) in such a way that the doped material prossesses a surplus of free electrons. Electrons are sub-atomic particles with a negative electrical charge, so silicon doped in this way is known as an n(negative)-type semiconductor. |
7Â¥2009-12-30 19:45:06
qfw_68
½û³æ
ÓÐβ°ÍµÄÇàÍÜ
- Ó¦Öú: 120 (¸ßÖÐÉú)
- ¹ó±ö: 0.414
- ½ð±Ò: 85720.6
- É¢½ð: 3020
- ºì»¨: 212
- ɳ·¢: 7684
- Ìû×Ó: 39484
- ÔÚÏß: 4852.6Сʱ
- ³æºÅ: 797958
- ×¢²á: 2009-06-24
- ÐÔ±ð: GG
- רҵ: ×ÔÈ»ÓïÑÔÀí½âÓë»úÆ÷·Òë
- ¹ÜϽ: Óн±ÎÊ´ð

8Â¥2009-12-30 19:54:24
qfw_68
½û³æ
ÓÐβ°ÍµÄÇàÍÜ
- Ó¦Öú: 120 (¸ßÖÐÉú)
- ¹ó±ö: 0.414
- ½ð±Ò: 85720.6
- É¢½ð: 3020
- ºì»¨: 212
- ɳ·¢: 7684
- Ìû×Ó: 39484
- ÔÚÏß: 4852.6Сʱ
- ³æºÅ: 797958
- ×¢²á: 2009-06-24
- ÐÔ±ð: GG
- רҵ: ×ÔÈ»ÓïÑÔÀí½âÓë»úÆ÷·Òë
- ¹ÜϽ: Óн±ÎÊ´ð

9Â¥2009-12-30 19:55:36
caoyn2588
ʵϰ°æÖ÷
![]()
![]()
![]()
![]()
- Ó¦Öú: 0 (Ó×¶ùÔ°)
- ½ð±Ò: 524.6
- É¢½ð: 25
- Ìû×Ó: 170
- ÔÚÏß: 144.7Сʱ
- ³æºÅ: 718686
- ×¢²á: 2009-03-09
- ÐÔ±ð: MM
- רҵ: ²ÄÁϱíÃæ¹¤³Ì
10Â¥2009-12-30 19:59:40














»Ø¸´´ËÂ¥