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Mirror-polished semiconductor grade silicon (111) wafers were chosen as substrates. The lattice mismatch between TiN and Si was about 28%. This large mismatch makes the effect of the coherence energy at the interface negligible and thus the effect of the substrate on the preferred orientation can be disregarded. |
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Mirror-polished semiconductor grade silicon (111) wafers were chosen as substrates. The lattice mismatch between TiN and Si was about 28%. This large mismatch makes the effect of the coherence energy at the interface negligible and thus the effect of the substrate on the preferred orientation can be disregarded. 半导体级的硅片，表面为（111）面，抛光后作为基板。TiN和Si的晶格差异大概为28%。这么大的差异使得界面处的共格效应可以忽略不计，所以不用考虑TiN在Si基板上的择优生长。 |
2楼2009-12-29 15:53:59
