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【请教】请教关于Raman XRD 图谱的应力应变相关问题
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投稿论文其中一审稿人，要求解释制备的纳米材料的拉曼，XRD中材料的应力应变 The two measured Raman peaks would require an extremely high internal stress about 10 GPa. I cannot see how such strain should be accumulated in a free standing nanostructure. Moreover, the results from TO an LO phonons would differ by a factor of two. In some cases, low wave number shoulders at about 760 cm-1 (for TO) were seen in nanostructures and attributed to stacking faults. However, it appeared only as small shoulder of a main peak at about 796 cm-1 and I am not aware of a single peak found by other groups. This discrepancy requires further investigation since it could be caused also by slight alloying, maybe Al, O, i.e. the nanowires are not composed of pure SiC. What are the results from XRD with respect to strain? 小弟才疏学浅，请教大神如何解决该问题 |
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2楼2010-03-23 09:27:45
3楼2010-03-23 09:28:44
daisylu206
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4楼2010-03-23 09:53:18