| 查看: 31 | 回复: 0 | |||
[交流]
76、Electronic Substitution Mechanism of Electron Tunneling
|
|
Preprint of CERN doi :10.5281/zenodo.20108457 or https://doi.org/10.5281/zenodo.20108457 My academic identifier: orcid id: 0009-0005-2185-5790. You may go to the official academic website to retrieve and view relevant research content. Readers may copy this number to search on the official zenodo website (search by English title or English keywords) to view the full English and Chinese pdf texts. Abstract The traditional quantum tunneling theory, centered on probabilistic penetration, cannot provide intuitive and practical physical guidance for the research and parameter regulation of electron tunneling devices in industrial production. Abandoning the hardly applicable hypothesis of quantum probabilistic penetration, this paper proposes an electron substitution mechanism of tunneling. It clarifies that electron tunneling is not illogical probabilistic penetration, but a physical process in which an incident electron squeezes into the atomic barrier, triggers chain-type electron substitution among atoms, and finally ejects an electron from the other side of the barrier. Protons have their own exclusive Coulomb sphere of influence and impose strict binding on extranuclear electrons; foreign electrons cannot directly pass through the barrier. The essence of tunneling is that incident electrons break local charge balance, weaken proton binding, allow original electrons to escape by inertia, and form chain transmission. This paper focuses on the decisive influence of barrier thickness on electron tunneling, supplements the logic of system charge neutrality balance after electron loss, and applies the mechanism to industrial device production, parameter optimization and process control. It provides clear and executable physical theoretical guidance for the research and production of industrial products such as tunnel diodes, quantum tunneling devices, nano-electronic components and semiconductor chips, solving the industry pain point that traditional theories can only perform mathematical fitting but cannot guide practical processes. Keywords: electron tunneling; electron substitution mechanism; chain substitution; barrier thickness; industrial production; semiconductor devices 1. Introduction Electron tunneling is the core physical foundation of modern industries including nanoelectronics, semiconductors and chip manufacturing, and is widely used in core components such as tunnel diodes, flash memory devices and quantum tunneling transistors. In current industrial production, only probabilistic formulas of traditional quantum mechanics are used for parameter fitting. The physical essence of tunneling efficiency, device barrier thickness, process accuracy and other key indicators cannot be grasped, leading to high R&D costs and difficult process debugging of devices. Based on physical essence, this paper proposes an electron substitution mechanism of tunneling, clarifies the microscopic physical logic of the tunneling process, focuses on the regulation law of barrier thickness as a core industrial parameter, improves the charge balance mechanism after electron substitution, and directly transforms the theory into practical industrial production guidance, providing solid theoretical support for process optimization, parameter design and mass production control of related electronic components.  |
回复此楼» 猜你喜欢
售SCI一区T0P文章，我:8.O.55.1.O.5.4,科目全,可+急
已经有3人回复
-
售SCI一区文章，我:8O5.5.1.O5.4,科目全,可伽急
已经有3人回复
-
售SCI一区文章，我:8.O.551.O.5.4,科目全,可伽急
已经有3人回复
-
售SCI一区T0P文章，我:8.O.55.1.O.54,科目齐全,可+急
已经有3人回复
-
售SCI一区T0P文章，我:8.O.55.1.O.54,科目齐全,可+急
已经有3人回复
-
售一区SCI文章T0P，我:8O.551.O54,科目全,可十急
已经有3人回复
-
售SCI一区T0P文章，我:8.O.55.1.O54,科目全,可伽急
已经有3人回复
-
售SCI一区文章，我:8O5.5.1.O5.4,科目全,可伽急
已经有3人回复
-
售一区SCI文章T0P，我:8O.551.O54,科目全,可十急
已经有3人回复
-
售SCI文章，我:8O.5.5.1O.54,科目全,可十急
已经有3人回复
