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Electrical properties of epitaxial CeO2 thin films on silicon (111) substrates grown in ultrahigh vacuum were studied, varying growth conditions and ex situ thermal treatments. Characterization using reflection high-energy electron diffraction and high resolution transmission electron microscopy reveal that while the ceramic layers have a good single-crystal structure, a dual amorphous layer of CeOx and SiO2 forms at the CeO2/Si interface. This structure has undesirable electrical properties, however, utilizing a post-anneal in dry oxygen, the a-CeOx layer was removed and the SiO2 amorphous layer was made thicker. This newly developed structure benefits from the SiO2/Si interface, having Dit5631011 cm22, and Qf5531011 cm22. The structure exhibits a high capacitance due to the large dielectric constant of CeO2 , has electrical properties comparable with those of other reported gate insulators on Si, and has an epitaxial oxide lattice matched to Si. 其中 Dit5631011 cm22和 Qf5531011 cm22是一组数据，不用翻译 |
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★ ★ ★ ★ ★ ★ ★ ★ ★ ★
小甲009(金币+10,VIP+0):谢谢，咱们共同努力 11-20 22:49
小甲009(金币+10,VIP+0):谢谢，咱们共同努力 11-20 22:49
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本文研究了在超高真空的条件下，于硅基底材料（111）晶面方向上生长外延的CeO2薄层的电特性。对此特性采用了反射高能电子衍射和高分辨率透射电镜进行研究，研究显示，当陶瓷层拥有良好单晶结构的时，CeOx和二氧化硅的双无定形层在CeO2/Si 界面处形成。这种结构电性能并不优良，但是在使用干氧气后退火后，一层CeOx层消除，并且非晶态二氧化硅层增厚了。拥有（Dit5631011 cm22, and Qf5531011 cm22），这种新开发的结构从CeO2/Si 界面处得到增效。由于CeO2的很大的介电常数，这种新结构表现出有很高的电容，电特性也可以比得上其他研究所报道的硅的栅绝缘体，同时拥有一个外延氧化物晶格与硅匹配。 请多指导，谢谢！ |
2楼2009-11-16 09:15:38
先译一段
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Electrical properties of epitaxial CeO2 thin films on silicon (111) substrates grown in ultrahigh vacuum were studied, varying growth conditions and ex situ thermal treatments. Characterization using reflection high-energy electron diffraction and high resolution transmission electron microscopy reveal that while the ceramic layers have a good single-crystal structure, a dual amorphous layer of CeOx and SiO2 forms at the CeO2/Si interface. 研究了超高真空下,在不同的生长条件和离线热处理的情况下,在(111)硅衬底上外延生长的二氧化铈薄膜的电特性.采用反射高能电子衍射方法和高分辨率透射电镜进行表征,显示当陶瓷层具有良好的单晶结构时,在CeO2/Si界面处会形成CeOx和二氧化硅的孪生非晶层. [ Last edited by onlliu on 2009-11-16 at 17:34 ] |
3楼2009-11-16 17:10:15
续译
★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★
小甲009(金币+45,VIP+0):你真有才，谢谢啊 11-20 23:01
小甲009(金币+45,VIP+0):你真有才，谢谢啊 11-20 23:01
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This structure has undesirable electrical properties, however, utilizing a post-anneal in dry oxygen, the a-CeOx layer was removed and the SiO2 amorphous layer was made thicker. This newly developed structure benefits from the SiO2/Si interface, having Dit5631011 cm22, and Qf5531011 cm22. 这种结构的电性能并不理想,但是利用在干氧中的后退火(处理),可以去除a-CeOx层和增厚非晶二氧化硅层.有两组数据(Dit5631011 cm22, Qf5531011 cm22)(可用),这种新开发的结构得益于CeO2/Si界面. The structure exhibits a high capacitance due to the large dielectric constant of CeO2 , has electrical properties comparable with those of other reported gate insulators on Si, and has an epitaxial oxide lattice matched to Si. 由于CeO2的高介电常数,这种结构展示出了高电容(特性),具有可同其它报道的硅上栅绝缘体相比的电特性,并且外延氧化物与硅晶格匹配. [ Last edited by onlliu on 2009-11-16 at 17:34 ] |
4楼2009-11-16 17:32:59