| 查看: 1792 | 回复: 2 | |||
| 当前主题已经存档。 | |||
SHX521金虫 (小有名气)
点点
|
[交流]
【原创】什么是悬空键?
|
||
| 请问什么是悬空键 |
» 猜你喜欢
关于合成MIL-125的求助
已经有0人回复
双非本硕光催化方向想读博,请各位老师看看我!
已经有2人回复
物理化学论文润色/翻译怎么收费?
已经有170人回复
瑞典林雪平大学范立洲课题组现招聘博士后、岗位制博士生
已经有0人回复
中国科大仿生界面材料科学全国重点实验室戴懿涛研究员/江雷院士团队招聘科研助理
已经有0人回复
中国科大仿生界面材料科学全国重点实验室戴懿涛研究员/江雷院士团队招聘科研助理
已经有0人回复
寻求物理化学学报最新的投稿模板!
已经有4人回复
东南大学杰青/海优团队招聘催化方向博士后
已经有866人回复
投稿咨询
已经有7人回复
自科面上 散金币 祈福
已经有61人回复
铁钼催化剂成型
已经有2人回复

luoyuan08
木虫 (正式写手)
- 应助: 0 (幼儿园)
- 金币: 4528.5
- 红花: 1
- 帖子: 468
- 在线: 29.1小时
- 虫号: 852231
- 注册: 2009-09-20
- 性别: MM
- 专业: 无机纳米化学
★
小木虫(金币+0.5):给个红包,谢谢回帖交流
小木虫(金币+0.5):给个红包,谢谢回帖交流
|
In condensed matter physics, a dangling bond occurs when an atom is missing a neighbor to which it would be able to bind. Such dangling bonds are defects that disrupt the flow of electrons and that are able to collect the electrons. A dangling bond is a broken covalent bond. Dangling bonds are found on the surface of most crystalline materials due to the absence of lattice atoms above them. For example, the Si (001) surface would have two dangling bonds per surface lattice atom. Because these dangling bonds do not constitute the lowest energy configuration, the surface tends to reconstruct or adsorb adatoms to reduce the surface energy. When a metal is deposited on silicon, these dangling bonds give rise to interface states within the energy band gap of silicon. The interface Fermi energy is pinned by these interface states, making the Schottky barrier height independent of the metal work function and primarily controlled by the interface states. This is the most commonly encountered difficulty in fabricating a semiconductor-metal ohmic contact. To make such a junction ohmic we will have to resort to doping the semiconductor, which would result in the thinning down of the energy barrier at the interface and consequently allowing for tunneling. It should be however noted that the resistance of such a junction is fairly high because electrons have to tunnel through the thinned Schottky barrier. Intrinsic defects at Si-SiO2 interfaces are important in the operation of metal-oxide-semiconductor devices. Unsaturated dangling bonds, generically referred to as Pb-type centers, occur at the interface between the Si substrate and the oxide and are detected by ESR techniques. The proper Pb center is found at (111) interfaces, while two distinct defects, referred to as Pb0 and Pb1, are distinguished at (100) interfaces. The Pb center has a clear microscopic characterization as an isolated sp3 dangling bond of the substrate pointing into the (111) direction, orthogonal to the interface. |

2楼2009-11-13 21:47:04
peem
金虫 (正式写手)
- 应助: 0 (幼儿园)
- 金币: 1265.3
- 散金: 459
- 红花: 5
- 帖子: 316
- 在线: 196.2小时
- 虫号: 170400
- 注册: 2006-01-18
- 专业: 光化学和辐射化学
3楼2009-11-14 02:10:26









回复此楼