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专业: 数论

[交流] Two-dimensional indium selenide wafers for integrated electronics

Two-dimensional indium selenide wafers for integrated electronics

二维硒化铟晶圆助力集成电子

▲ 作者：BIAO QIN, JIANFENG JIANG, LU WANG, QUANLIN GUO, CHENXI ZHANG, LIN XU, ET AL.

▲链接：

https://www.science.org/doi/10.1126/science.adu3803

▲摘要：

二维（2D）硒化铟具有低有效质量、高热速度和优异的电子迁移率，是一种有望超越硅电子的半导体，但生长薄膜尚未达到剥离微米级薄片的性能水平。

研究组报道了一种固-液-固策略，通过创建富铟液体界面并保持严格的铟硒1:1化学计量比，将非晶硒化铟薄膜转化为纯相、高结晶度的硒化铟晶圆。所得硒化铟薄膜在整个约5厘米晶圆上表现出优异的均匀性、纯相性和高结晶度。

基于该硒化铟晶圆制备的晶体管阵列表现出卓越的电子性能，超越了所有2D薄膜基器件，包括室温下极高的迁移率（平均高达287 cm2/V s）和接近玻尔兹曼极限的亚阈值摆幅（平均低至67 mV/10倍频）。

▲ Abstract：

Two-dimensional (2D) indium selenide, with its low effective mass, high thermal velocity, and exceptional electronic mobility, is a promising semiconductor for surpassing silicon electronics, but grown films have not achieved performance comparable with that of exfoliated micrometer-scale flakes. We report a solid?liquid?solid strategy that converts amorphous indium selenide films into pure-phase, high-crystallinity indium selenide wafers by creating an indium-rich liquid interface and maintaining a strict 1:1 stoichiometric ratio of indium to selenium. The as-obtained indium selenide films exhibit exceptional uniformity, a pure phase, and a high crystallinity across an entire ~5-centimeter wafer. Transistor arrays based on the produced indium selenide wafers demonstrate outstanding electronic performance surpassing that of all 2D film-based devices, including an extremely high mobility (averaging as high as 287 square centimeters per volt-second) and a near-Boltzmann-limit subthreshold swing (averaging as low as 67 millivolts per decade) at room temperature.

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