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It is generally known that the conduction band potentials (ECB) of n-type semiconductor was very close to (about 0.1 V more negative) the flat-band potentials¡£ Õâ¾ä»°ÔÚÎÄÏ×ÖÐÓ¦¸ÃÔõôÀí½â°¡£¿ flat-band potentialsÊÇʲôÒâ˼°¡£¿ лл~~~~ ÎÒÏë·¢½ð±ÒµÄ£¬¿ÉÊÇûÓгɹ¦~Äܲ»ÄÜÇë°ßÖñ°ïæÐÞ¸ÄÒ»ÏÂÌû×ÓµÄÀàÐÍ£¬·ÖÏí30¸ö½ð±Ò~~ [ Last edited by sima022225 on 2009-11-2 at 10:29 ] |
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mhwu514(½ð±Ò+1,VIP+0):ллÌÖÂÛ 11-2 12:14
| flat band potential ÊÇֻʩ¼Óµçѹʱ°ëµ¼ÌåûÓÐband bending£¬Õâ¸öµçѹ¾Í½Ð×öflat band potential. Usually, band bending forms at semiconductor/electrolyte interface. Flat band potential could be measured by Mott-schottky plot. Flat band potential is a good approximation of fermi energy at n-type semicondutor. Therefore, The conduction band potentials of n type semiconductor was very close to the flat band potential |
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