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yexuqing新虫 (文学泰斗)
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铁电斜方六面体氮化硼单晶的斜边外延
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铁电斜方六面体氮化硼单晶的斜边外延 ▲ 作者：Li Wang, Jiajie Qi, Wenya Wei, Mengqi Wu, Zhibin Zhang, Xiaomin Li, et al. ▲ 链接： https://www.nature.com/articles/s41586-024-07286-3 ▲ 摘要： 在二维电介质家族中，斜方六面体氮化硼（rBN）不仅具有六方氮化硼的优越性能（包括低介电常数和耗散、强电绝缘性、良好的化学稳定性、高导热性和无悬空键的原子平坦性），而且还具有源于面内和面外中心对称破缺的有用光学非线性和界面铁电性。然而，由于需要前所未有的生长控制来协调每层的晶格取向和每个界面的滑动矢量，制备大尺寸单晶rBN层仍颇具挑战。 研究组报道了一种使用斜边外延来制备厘米尺寸单晶rBN层的简单方法，在相邻镍表面上具有精确的层间ABC堆叠。结果在斜面（110）处成功地精确制造了阶地面（100）聚束台阶边缘的单晶镍基底，同时引导每个BN层中一致的硼-氮键取向，并通过每个斜面附近的成核来引导BN层的斜方六面体堆叠。 研究组验证了原生BN层的纯斜方六面体相，并在高居里温度下表现出稳健、均匀和可切换的铁电性。该工作为单晶二维层的精确堆叠控制生长提供了有效途径，并为基于堆叠二维材料的适用多功能器件奠定了基础。 ▲ Abstract： Within the family of two-dimensional dielectrics, rhombohedral boron nitride (rBN) is considerably promising owing to having not only the superior properties of hexagonal boron nitride—including low permittivity and dissipation, strong electrical insulation, good chemical stability, high thermal conductivity and atomic flatness without dangling bonds—but also useful optical nonlinearity and interfacial ferroelectricity originating from the broken in-plane and out-of-plane centrosymmetry. However, the preparation of large-sized single-crystal rBN layers remains a challenge, owing to the requisite unprecedented growth controls to coordinate the lattice orientation of each layer and the sliding vector of every interface. Here we report a facile methodology using bevel-edge epitaxy to prepare centimetre-sized single-crystal rBN layers with exact interlayer ABC stacking on a vicinal nickel surface. We realized successful accurate fabrication over a single-crystal nickel substrate with bunched step edges of the terrace facet (100) at the bevel facet (110), which simultaneously guided the consistent boron–nitrogen bond orientation in each BN layer and the rhombohedral stacking of BN layers via nucleation near each bevel facet. The pure rhombohedral phase of the as-grown BN layers was verified, and consequently showed robust, homogeneous and switchable ferroelectricity with a high Curie temperature. Our work provides an effective route for accurate stacking-controlled growth of single-crystal two-dimensional layers and presents a foundation for applicable multifunctional devices based on stacked two-dimensional materials. |
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