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新加坡南洋理工大学_电气与电子工程学院_KIM Munho NED Lab_招GaN HEMT/ICs器件博后
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Nano Engineering Device Laboratory (NEDL, Prof. KIM Munho’s research group) https://ntunedl.weebly.com/ Introduction: Our research focuses on innovative approaches toward optoelectronic and electronic materials and devices. We also strive to develop unconventional semiconductor structures and device concepts to bring lasting impact to the field of semiconductor nanotechnology, electronics, and photonics. The NEDL group hires one (1) research fellow (RF, i.e., postdoc) who is highly motivated with the following capabilities. Job Responsibilities: (1) To develop RF E-mode GaN high electron mobility transistors (HEMTs). (2) To design, fabricate, and characterize E-mode GaN HEMTs and logic circuits (NAND, NOR, ring oscillator, etc.). (3) To oversee the progress of GaN HEMTs and ICs project. (4) To advise PhD and/or undergraduate researchers in the project. (5) To help proposal writing around GaN HEMTs and ICs. Job Requirements: (1) PhD in relevant area (electrical engineering, materials science, and physics). (2) Research experience in E-mode and/or D-mode GaN HEMTs is mandatory. (3) Research experience includes design, fabrication, and characterization of GaN HEMTs. (4) Prior cleanroom fabrication and GaN HEMT experience. (5) Research background in solid state physics, applied physics, semiconductor materials, and devices. Candidates interested in this position (1 RF opening) must send CV to email address (munho.kim@ntu.edu.sg). Only shortlisted candidates will be notified. Monthly salary will be highly competitive (> S$6,000) and relocation allowance will be provided. 请感兴趣的同学直接通过邮件与Kim老师联系 |
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