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新加坡南洋理工大学招聘博士后-氮化镓高频器件方向
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Job Description The Energy Research Institute @ NTU (ERIAN) invites applications for the position of Research Scientist. The Researcher will work on a project to conduct the R&D of GaN-based transistors on silicon substrates/engineered substrates (e.g. HEMT, MISHEMT, FinHEMT etc.).suitable for millimeter-wave (24-40GHz) low-voltage mobile communication applications. Key Responsibilities: Develop fabrication process modules (e.g. ohmic, gate, interconnects etc) in wafer fabrication facility. Fabrication, characterization and analysis of GaN-based transistors Assist in project review report drafting, project proposal drafting, slides preparation and publishing conference/journal papers. Student project supervision (including JC and Poly students, IA Students, Final Year Project (FYP) Students, PhD students). Job Requirements: Master/PhD in Electrical and Electronic Engineering or related field Master with at least 4 years or PhD with at least 1 year research experience in related area Expertise in semiconductor device fabrication and characterisation Knowledge in Gallium Nitride devices (e.g. HEMT, MISHEMT, FinHEMT etc) is preferred Must be self-motivated and be prepared to work independently Publication track record is an advantage Proficiency in English 申请方式： 有意者请将详细英文简历发送至 hxie002@e.ntu.edu.sg |
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