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oyyx19
гæ (³õÈëÎÄ̳)
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- ³æºÅ: 2142463
- ×¢²á: 2012-11-22
- רҵ: Äý¾Û̬ÎïÐÔ II £ºµç×ӽṹ
2Â¥2023-06-05 16:32:50
shijing879
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Ëû˵ÊÇÄÇPBEËãµÄ¡£ We calculated the band structures of pristine BP from monolayer up to ¬ève-layer and determined their valence and conduction band edges with respect to the vacuum level. The O2/O2 redox potential, reported to be 4.11 eV,40,41 is also with respect to the vacuum level. So, our calculated band edge positions can be compared with the O2/O2 redox potential. According to hybrid HSE functional calculation, 4.11 eV is located between the CBM of trilayer and four-layer BPs.40 Considering that we are performing a high-throughput study and that the hybrid functional calculation is computationally highly demanding, we have used the PBE functional in this work. We followed the previous work,34,39 which corrected the value for the O2/O2 redox potential to be 4.67 eV in PBE calculations. Fig. 1 shows that the CBM of few-layer BP lowers as the thickness increases and the corrected O2/O2 redox potential is located between the CBMs of trilayer and four-layer BPs, consistent with the result from HSE calculation.40 |
3Â¥2023-06-10 22:14:14
shijing879
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4Â¥2023-06-10 22:15:25
shijing879
гæ (³õÈëÎÄ̳)
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- ×¢²á: 2019-01-10
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ÕâÆªÎÄÕÂÊÇʹÓÃPBEËãµÄ£¬Enhancing the ambient stability of few-layer black phosphorus by surface modification(link: https://pubs.rsc.org/en/content/articlepdf/2018/ra/c8ra00560e) |
5Â¥2023-06-10 22:19:29













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