| 查看: 365 | 回复: 2 | |||
| 当前主题已经存档。 | |||
lookingfyou木虫 (正式写手)
|
[交流]
p-n Junction Transistors（肖克利 经典老文）
|
||
|
p-n Junction Transistors 作者：W. Shockley（肖克利）, M. Sparks, and G. K. Teal 注释：Phys. Rev. 83, 151–162 (1951) 摘要/内容： The effects of diffusion of electrons through a thin p-type layer of germanium have been studied in specimens consisting of two n-type regions with the p-type region interposed. It is found that potentials applied to one n-type region are transmitted by diffusing electrons through the p-type layer although the latter is grounded through an ohmic contact. When one of the p-n junctions is biased to saturation, power gain can be obtained through the device. Used as "n-p-n transistors" these units will operate on currents as low as 10 microamperes and voltages as low as 0.1 volt, have power gains of 50 db, and noise figures of about 10 db at 1000 cps. Their current-voltage characteristics are in good agreement with the diffusion theory. [ Last edited by lookingfyou on 2005-12-20 at 08:37 ] |
回复此楼» 猜你喜欢
286求调剂
已经有15人回复
-
0860004 求调剂 309分
已经有3人回复
-
材料类284调剂
已经有20人回复
-
调剂
已经有11人回复
-
考研调剂-材料类-284
已经有13人回复
-
复试调剂，一志愿郑州大学材料与化工289分
已经有13人回复
-
一志愿0807 数一英一 313 有没有二轮调剂
已经有5人回复
-
一志愿0703化学招61最终排名62化学求调剂
已经有15人回复
-
308求调剂
已经有16人回复
-
材料调剂
已经有14人回复
2楼2005-12-21 11:08:39
zxf984
至尊木虫 (文坛精英)
- 应助: 68 (初中生)
- 金币: 39262.2
- 散金: 30
- 红花: 23
- 帖子: 13068
- 在线: 3556.3小时
- 虫号: 80497
- 注册: 2005-07-15
- 性别: GG
- 专业: 无机材料化学
3楼2005-12-22 16:01:31
