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1 Mechanism of diamond-to-graphite transformation at
diamond-stable conditions
²éѯ×÷ÕߣºCHEN XiaoZhou
2 Morphology Change of Metastable Regrown Graphite
with Boron Additive under HPHT
²éѯ×÷ÕߣºXiaozhou Chen
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Mechanism of diamond-to-graphite transformation at diamond-stable conditions
  
Holdings        ¸ü¶àÑ¡Ïî


×÷Õß: Zang CY (Zang ChuangYi)1, Chen XZ (Chen XiaoZhou)1, Hu Q (Hu Qiang)1, Ma HA (Ma HongAn)2, Jia XP (Jia XiaoPeng)1,2  
À´Ô´³ö°æÎï: CHINESE SCIENCE BULLETIN    ¾í: 54    ÆÚ: 14    Ò³: 2535-2538    ³ö°æÄê: JUL 2009   
±»ÒýƵ´Î: 0     ²Î¿¼ÎÄÏ×: 14     ÒýÖ¤¹ØÏµÍ¼      
»áÒéÐÅÏ¢: 20th International Congress on Sexual Plant Reproduction
Brasilia, BRAZIL, AUG 04-08, 2008  
ÕªÒª: The diamond-to-graphite transformation at diamond-stable conditions is studied by temperature gradient method (TGM) under high pressure and high temperature (HPHT), although it is unreasonable from the view of thermodynamic considerations. It is found that, at diamond-stable conditions, for example, at 5.5 GPa and 1550 K, with fine diamond grits as carbon source and NiMnCo alloy as metal solvent assisted, not only large diamond crystals, but metastable regrown graphite crystals would be grown by layer growth mechanism, and the abundance of carbon source in the higher temperature region is indispensable for the presence of metastable regrown graphite crystals. From this transformation, it is concluded that, with metal solvent assisted, although the mechanism of crystal growth could be understood by the macro-mechanism of solubility difference between diamond and graphite in metal solvents, from the point of micro-mechanism, the minimum growth units for diamond or graphite crystals should be at atomic level and unrelated to the kinds of carbon source ( diamond or graphite), which could be accumulated free-selectively on the graphite with sp(2)pi or diamond crystals with sp(3) bond structure.
ÎÄÏ×ÀàÐÍ: Proceedings Paper  
ÓïÑÔ: English  
×÷Õ߹ؼü´Ê: transformation; diamond; graphite; HPHT  
KeyWords Plus: SYNTHETIC DIAMONDS; GROWTH RATES; TEMPERATURE; CRYSTAL; SYSTEM  
ͨѶ×÷ÕßµØÖ·: Zang, CY (ͨѶ×÷Õß), Henan Polytech Univ, Inst Mat Sci & Engn, Jiaozuo 454000, Peoples R China  
µØÖ·:
1. Henan Polytech Univ, Inst Mat Sci & Engn, Jiaozuo 454000, Peoples R China
2. Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China  
µç×ÓÓʼþµØÖ·: dndzcy@hpu.edu.cn  
³ö°æÉÌ: SCIENCE PRESS, 16 DONGHUANGCHENGGEN NORTH ST, BEIJING 100717, PEOPLES R CHINA  
ѧ¿ÆÀà±ð: Multidisciplinary Sciences  
IDS ºÅ: 478FD  
ISSN: 1001-6538  
DOI: 10.1007/s11434-009-0401-2
3Â¥2009-09-14 16:21:11
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zhuzhu20081593(½ð±Ò+15,VIP+0):ллÄã 9-14 16:34
Morphology Change of Metastable Regrown Graphite with Boron Additive under HPHT
  
Holdings        ¸ü¶àÑ¡Ïî


×÷Õß: Zang CY (Zang, Chuanyi)1, Chen XZ (Chen, Xiaozhou)1, Hu Q (Hu, Qiang)1, Guo W (Guo, Wei)2, Huang GF (Huang, Guofeng)2, Jia XP (Jia, Xiaopeng)2  
À´Ô´³ö°æÎï: JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY    ¾í: 25    ÆÚ: 4    Ò³: 539-542    ³ö°æÄê: JUL 2009   
±»ÒýƵ´Î: 0     ²Î¿¼ÎÄÏ×: 14     ÒýÖ¤¹ØÏµÍ¼      
ÕªÒª: By temperature gradient method under high pressure and high temperature (HPHT), with NiMnCo alloy as the solvent metal, at diamond-stable region of about 5.4 GPa and 1500 K, metastable regrown graphite crystals of different morphology were synthesized. With B as an additive incorporated into the NiMnCo-C system, metastable, regrown graphite crystals of sphere-like shape were firstly obtained under HPHT. If the growth system does not contain B, sheet-like regrown graphite crystals, most with regular hexagonal morphology, are grown upwards and standing vertically in the metal solvent. When B additive of 1.0 wt pct was added into carbon source (graphite powder), all metastable regrown graphite crystals took on the habit of regular sphere-like morphology, and were grown by a spiral layer growth mechanism.
ÎÄÏ×ÀàÐÍ: Article  
ÓïÑÔ: English  
×÷Õ߹ؼü´Ê: Graphite; High pressure and high temperature; Temperature gradient method; Morphology  
KeyWords Plus: HIGH-NITROGEN CONCENTRATION; LARGE DIAMOND CRYSTALS; GROWTH; CRYSTALLIZATION; TEMPERATURE; CARBON; SYSTEM; NAN3  
ͨѶ×÷ÕßµØÖ·: Zang, CY (ͨѶ×÷Õß), Henan Polytech Univ, Inst Mat Sci & Engn, Jiaozuo 454000, Peoples R China  
µØÖ·:
1. Henan Polytech Univ, Inst Mat Sci & Engn, Jiaozuo 454000, Peoples R China
2. Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China  
µç×ÓÓʼþµØÖ·: dndzcy@hpu.edu.cn  
»ù½ð×ÊÖúÖÂл:
»ù½ð×ÊÖú»ú¹¹ ÊÚȨºÅ
National Natural Science Foundation of China  50172018  
Foundation of He'nan Educational Committee  2009A430014  
State Key Laboratory of Superhard Materials of Jilin University  200801  

[ÏÔʾ»ù½ð×ÊÖúÐÅÏ¢]   

This work was supported by the National Natural Science Foundation of China under grant No. 50172018, the Foundation of He'nan Educational Committee under grant No. 2009A430014, and the Open Research Fund Program of State Key Laboratory of Superhard Materials of Jilin University under grant No. 200801.

³ö°æÉÌ: JOURNAL MATER SCI TECHNOL, 72 WENHUA RD, SHENYANG 110015, PEOPLES R CHINA  
ѧ¿ÆÀà±ð: Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering  
IDS ºÅ: 480ZE  
ISSN: 1005-0302
4Â¥2009-09-14 16:22:18
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