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[ÇóÖú] Silvaco TCAD LTPS˫դÆ÷¼þ·ÂÕæÊÕÁ²²»ÁË£¬ÓÐûÓкõĽâ¾ö°ì·¨

Silvaco TCAD LTPS˫դÆ÷¼þ·ÂÕæÓïÑÔÈçÏ£º
# (c) Silvaco Inc., 2013
go atlas
TITLE polysilicon TFT simulation

mesh   nx=104  ny=55  
#
x.m          n=1      l=0         r=1
x.m          n=104     l=16       r=1
#
#
y.m          n=1      l=-0.12    r=1
y.m          n=24      l=0       r=1
y.m          n=50     l=0.0450     r=1
y.m          n=55     l=0.6     r=1.6
#
#
#  **************** regions *******************************
#             1=oxide  2=silicon 3-oxide
#

region       num=1  y.min=-0.12 y.max=-0.08    nitride
region       num=2  y.min=-0.08 y.max=0.    oxide
region       num=3  y.min=0. y.max=0.0450   silicon
region       num=4  y.min=0.0450 y.max=0.6 oxide
#
#  **************** electrodes ****************************
#    1=gate  2=substrate  3=source  4=drain
#
elec  num=1  x.min=3.5   x.max=5.5  y.min=-0.12 y.max=-0.12 name=gate
elec  num=2  x.min=10.5   x.max=12.5  y.min=-0.12 y.max=-0.12 name=gate
elec  num=3  substrate            name=substrate
elec  num=4  x.min=0.  x.max=2  y.min=0.   y.max=0.   name=source
elec  num=5  x.min=14 x.max=16 y.min=0.   y.max=0.   name=drain
#
#  **************** doping profiles ***********************
#
doping     reg=3  uniform conc=1.e10 n.type
doping     reg=3  gauss conc=9.e21 n.type x.min=0. x.max=2 char=0.3
doping     reg=3  gauss conc=1.8e18 n.type x.min=2 x.max=3.5 char=0.3
doping     reg=3  gauss conc=1.8e18 n.type x.min=5.5 x.max=7 char=0.3
doping     reg=3  gauss conc=9.e21 n.type x.min=7. x.max=9 char=0.3
doping     reg=3  gauss conc=1.8e18 n.type x.min=9 x.max=10.5 char=0.3
doping     reg=3  gauss conc=1.8e18 n.type x.min=12.5 x.max=14 char=0.3  
doping     reg=3  gauss conc=9.e21 n.type x.min=14 x.max=16 char=0.3

#
#
#     Set parameters for polysilicon
#
material region=3 mun=300 mup=30
#
# Use the continuous defect model
defects continuous numa=24 numd=24 \
  nta=7.3e20 ntd=8.5e20 wta=0.047 wtd=0.03 \
  nga=2.4829e17 ngd=3.5e17 ega=0.7 egd=0.3 wga=0.125 wgd=0.12 \
  sigtae=1.e-16 sigtah=1.e-14 sigtde=1.e-14 sigtdh=1.e-16  \
  siggae=1.e-16 siggah=1.e-14 siggde=1.e-14 siggdh=1.e-16  
#
contact        num=1 n.polysilicon
contact name=source
contact name=drain
models srh temp=300
models print bbt.kl bb.b=1.05e7
#
output con.band val.band
method newton

solve init
save outf=sim.str
tonyplot sim.str -set tftex07_0.set

#
# Electrode #1 - Gate, #2 - Substrate, #3 - Source, #4 - Drain
#

method newton trap maxtrap=10
#
solve  vdrain=0.1
solve  vdrain=0.2
solve  vdrain=0.5
solve  vdrain=1 vstep=0.01 vfinal=10. name=drain

#
# Solve id versus vg curve
#

#
log outf=sim_10v.log
solve vstep=0.1 vfinal=15 name=gate vgate=-15 vdrain=10

solve  vgate=-0.1
solve  vgate=-0.2
solve  vgate=-0.5
solve  vgate=-1 vstep=-1 vfinal=-15. name=gate
log outf=sim_0.1v.log
solve vstep=0.1 vfinal=15 name=gate vgate=-15 vdrain=0.1
#tonyplot -overlay tftex07_1.log tftex07_2.log -set tftex07_1.set
tonyplot -overlay sim_10v.log sim_0.1v.log -set tftex07_2.set
extract init inf ="sim_10v.log"
extract name = "IOFF" y.val from curve (v."gate",i."drain" where x.val =-7
extract name = "ION" y.val from curve (v."gate",i."drain" where x.val =8
#
quit
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