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松山湖材料实验室招聘功率半导体器件工程师
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Sample Text The power device engineer will be responsible for the benchmarking, characterization, testing and optimal performance definition in all levels of the power electronic applications from bare die, packaged platform, and systems. You are also responsible for product datasheet maintenance with all required data and format. You will work closely with the cross disciplinary team members for product development and product performance definition and characterization. 功率器件工程师将负责裸芯片、封装平台和系统的所有级别的功率电子应用中的基准测试、表征、测试和最佳性能定义。同时该职位还将负责使用所有必需的数据和格式维护产品数据表，与跨学科团队成员紧密合作，以进行产品开发以及产品性能的定义和表征。 Job Responsibility 1, Work with system engineer to understand the system level requirements for the product. Propose appropriate bare die options with available sourcing channel. Proactively acquire die samples (including mechanical die) for characterization and record the data, and quotes as part of the proposal. 与系统工程师一起了解产品的系统级要求，提示适当的裸芯片候选产品，并挖掘可用的采购渠道，主动获取芯片样品（包括机械样品）以进行表征并记录数据，并作为报价的一部分进行报价。 2, Characterization of power module sample and provide feedback to design for performance update. Work with system engineer regarding module level update. Collect all data necessary for datasheet preparation. 功率模块样品的表征，并为设计提供反馈以进行性能更新。与系统工程师合作进行模块级别更新，收集产品数据手册所需要的数据。 3, Work with testing engineer regrading all biased qualification/reliability testing and data collection. Work with design engineer for fixture design required by all testing. 与测试工程师合作，对所有qual测试以及可靠性测试进行数据收集，与设计工程师合作进行测试夹具的设计。 4, Co-owner of list of materials for testing in the High Power Lab. 大功率电力电子实验室中，同步负责所有测试材料。 5, Propose FA per poor performance observed and/or failed samples. Work with FA to define possible cross sectional area for further investigation. 根据观察到的不良性能和、或失效的样本提出可能的失效原因，与FA工程师合作确定可能的检测的横断界面，以供进一步进行失效的根本原因分析。 Requirements 1, B.S. or above degree in Electrical, Electronics, System Engineering, and Physics or related discipline 电气工程， 电子，系统工程，物理等相关专业本科及以上学历。 2, Experience or familiar with high voltage/high power applications. 熟悉或在高压、大功率电力电子应用领域有经验。 3, Experience and/or knowledge in power electronic devices such as Si IGBT, MOSFET, Diode, SiC MOSFET, SBD, and GaN… etc. 有功率器件，如Si IGBT, MOSFET, Diode, SiC MOFET, SBD,以及GaN的知识储备或经验。 4, Familiar with characterization and testing of the power devices above. Know the Pros and Cons of each devices. 熟悉以上所属的功率器件的表征和测试，理解各种器件之间的特性及优劣势。 5, Familiar with device physics with certain knowledge in the processes of manufacturing 熟悉器件物理知识，且有一定的器件生产制造过程知识。 6, Passion in Wide Band Gap devices performance enhancement in all levels of applications 对提高WBG器件在系统中应用的性能充满激情。 联系人：胡先生 电话：13913899845 邮箱：2147162848@qq.com  [ 来自版块群 广东 ] |
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