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clwang木虫 (正式写手)
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| ITO薄膜作为PTCDA/Si--有机/无机光电探测器的阳极时，衬底材料为不耐高温的有机物，ITO薄膜需在低温下淀积。本文通过射频磁控溅射在玻璃衬底表面淀积ITO透明导电薄膜，通过四探针和紫外可见-近红外光谱试仪分别测量薄膜的导电性、透光率。实验结果表明：随着溅射过程压力的升高，薄膜的透过率和电阻率都会逐渐变差；随着溅射功率的增大，薄膜的电阻率会变好但是透过率会变差；氧气分压的增加虽然在一定程度上有助于薄膜透过率的提高，同时导致薄膜的电阻率的增加；但对薄膜进行高温下的退火则会很好的降低薄膜的电阻率。结论：在低温下制备ITO薄膜的优化工艺条件为：溅射气压为0.45Pa，功率为45W，溅射时以氧气作为反应气体，不需对成品器件进行退火处理。 |
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clwang(金币+40,VIP+0): 8-12 07:23
clwang(金币+40,VIP+0): 8-12 07:23
| When ITO thin film as the anode of PTCA/Si-organic/inorganic photodevice,the substrate material is low tenperature resistant organism, so ITO film need to be deposited at low temperature . In this essay, ITO transparent and conductive film was deposited on the surface of glass substracte material by adopt RF Magnetron sputtering(RFMS), measuring the conduction and the transmittance of thin films by four piont probe technique and ultraviolet visible-near infared spectrum respectively. the result show that: the transmittance and conduction of thin films become lower gradually as the raising of the sputtering-process pressure; the congduction of thin films get better and the transmittance become lower as the raising of the sputtering power; as raising oxygen tension , the transmittance of thin films can improving to a certain extent , meanwhile the conduction of thin films will increase; but it can reduce the conduction of thin films by high temperature anneal to thin films. conclusion: the optimize process of preparing ITO thin films at low temperature is that sputtering pressure is 0.45Pa, power is 45W, oxygen is serve as reaction gas at sputtering and finished products don't require anneal. |
2楼2009-08-11 11:29:07
3楼2009-08-11 11:31:45
monitor2885
至尊木虫 (职业作家)
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clwang(金币+40,VIP+0): 8-12 07:24
clwang(金币+40,VIP+0): 8-12 07:24
| When ITO thin film is taken as PTCDA/Si-- organic/inorganic photodetector anode, the substrate material is organic substance that can not withstand high temperature. ITO thin film deposition at low temperature is required. In this paper, RF magnetron sputtering on glass substrate surface is used to deposit ITO transparent conductive film. Then, through four-point probe and ultraviolet visible near-infrared spectroscopy measurement are applied to test conductivity and light transmission rate. The experimental results show that with the increasing pressure in sputtering process, film transmittance and resistivity will gradually deteriorate. While as sputtering power increases, resistivity of thin film will become a good performance but transmittance deteriorated. However, the increase in oxygen partial pressure to some extent, can contribute to improvement of transmittance, at the same time lead resistivity of film increases. But under high-temperature film annealing will reduce resistivity greatly. |
4楼2009-08-11 16:19:06
monitor2885
至尊木虫 (职业作家)
队长
- 翻译EPI: 15
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- 金币: 38700.5
- 散金: 147
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5楼2009-08-11 16:20:56
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clwang(金币+40,VIP+0): 8-12 07:23
clwang(金币+40,VIP+0): 8-12 07:23
| If ITO thin film is used as the anode of PTCDA/Si - organic/inorganic photodetector, the substrate is organic with no high-temperature tolerance that requires low temperature ITO thin film deposition. In this paper, RF magnetron sputtering technique was used to deposit transparent and conductive ITO film whose conductivity and transmittance were characterized using four-point probe method and UV-VIS-NIR spectroscopy. The experimental results show that with the increasing pressure in sputtering process, the film transmittance and resistivity deteriorate gradually. The increase of the sputtering power renders thin film with improved resistivity but deteriorated transmittance. Although increasing the oxygen partial pressure improves the transmittance and the resistivity of film to some extent, the followed high-temperature annealing reduces the film resistivity greatly. In conclusion, the optimized low-temperature ITO film can be deposited at a sputtering pressure of 0.45Pa and a power of 45W, with oxygen as reactive gas during sputtering and negligible annealing treatment for finished devices. |
6楼2009-08-11 17:30:01