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[求助] 关于单层二硫化钼如何做纳米管结构？已有1人参与

求助！！！
我准备做二硫化钼材料的纳米管体系，之前用MS 建的模型的角度是90,90,120，不是正交的，我看有的资料是可以做出来纳米管的结构，想问一下是怎么做出来的，谢谢！

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已阅回复此楼关注TA 给TA发消息送TA红花 TA的回帖

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https://tigerprints.clemson.edu/all_dissertations/116
Recommended Citation
Xu, Lingyun, "Electronic Structure of MoS2 Nanotubes" (2007). All Dissertations. 116.
https://tigerprints.clemson.edu/all_dissertations/116
Abstract
First-principles methods enable one to study the electronic structure of solids, surfaces,
or clusters as accurately as possible with moderate computational effort.
So we used a first-principles electronic structure method to calculate the electronic
structure of free-standing layer of MoS2 with ABA and ABC stacking. Our results suggest
MoS2 with ABA stacking which appears as an insulator has an energy gap of 1.64 eV.
The covalent bonds between molybdenum and sulfur atoms are strong enough to form this
gap. The ABC stacking will break the symmetry and becomes metallic. The valance and
impurities calculations show the rigid-band picture of MoS2 with ABA stacking.
For treating larger systems, one can also use the tight-binding method. We applied
this method to fit the band structure of single layer of S to the result from the first-principles
calculation.
The electronic structure of MoS2 nanotubes has been studied using a first-principles
electronic structure method. We investigated MoS2 zigzag (n, 0) nanotubes as well as
armchair (n, n) structures. We constructed MoS2 nanotubes with ABA and ABC stacking.
The structures have been completely optimized. We compare our results to previous
tight-binding calculations by Seifert et al.[29] and find significant differences in configuration,
bond lengths, and resulting electronic structure in several MoS2 nanotubes. For zigzag
structures, almost all the nanotubes with ABA stacking and small tubes with ABC stacking
are semiconducting. For armchair structures, all (n, n) tubes with ABA stacking are
semiconducting and with ABC stacking are metallic. For armchair and zigzag tubes of a
given n, the lowest energy structure is semiconducting.

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