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woshibadchen金虫 (正式写手)
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80金币急求翻译一段话,汉译英谢谢
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掺杂导致能带结构改变,在价带和倒带之间形成很多中间态,电子跃迁后很容易发生热迟豫跳转到这些能带,进一步迟豫或跃迁回到价带跟空穴结合.很明显,中间态越多,热迟豫发生的机率越大,即电子空穴复合加重.一定程度内,我们希望有这些中间态,因为中间态使得电子跃迁几率增大;但是浓度过大,跃迁后很快又复合了.这是一种矛盾. [ Last edited by woshibadchen on 2009-6-8 at 10:46 ] |
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jichongcml
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| Energy band structure of doped lead to changes in the valence band and rewind a lot of Transition state between the electronic transition is very prone to heat after the late Yu Jump to these energy band, and further delayed relaxation or transition back to the valence band hole with the combination of . It is obvious that the more Transition state, thermal relaxation occurs later than the greater the probability that the electron hole composite increase. to some extent, we hope that these Transition state, as Transition state increase the probability of electronic transition; but the concentration of too much , soon after the transition of the complex. This is a contradiction. |
2楼2009-06-08 13:41:30
longhua7085
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woshibadchen(金币+30,VIP+0):谢谢兄弟了 6-9 17:20
woshibadchen(金币+30,VIP+0):谢谢兄弟了 6-9 17:20
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掺杂导致能带结构改变,在价带和倒带之间形成很多中间态,电子跃迁后很容易发生热迟豫跳转到这些能带,进一步迟豫或跃迁回到价带跟空穴结合. Doping leads to changes in energy band structure,forming many intermediate states between valence bands and inverted bands. Thermal relaxation often occurs after electronic transition and electrons jump to the intermediate states or go back to valence bands to combine with electron holes after further relaxation or transition. 很明显,中间态越多,热迟豫发生的机率越大,即电子空穴复合加重.一定程度内,我们希望有这些中间态,因为中间态使得电子跃迁几率增大;但是浓度过大,跃迁后很快又复合了.这是一种矛盾. Obviously, thermal relaxation is more likely to occur with more intermediate states, namely the recombination of electron holes becomes much more serious. In some way, We expect the intermediate states exsit , because it will increase the possibility of electronic transition. However, it is a contradiction that the electron holes recombine with each other after electronic transition. 非专业翻译 倒带，迟豫，中间态，复合。。。这些词可能翻译不准确，楼主自己再修改下吧 |
3楼2009-06-08 15:25:50
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4楼2009-06-08 15:30:53
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5楼2009-06-08 15:33:56
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woshibadchen(金币+30,VIP+0):谢谢了,兄弟 6-9 17:19
woshibadchen(金币+30,VIP+0):谢谢了,兄弟 6-9 17:19
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三楼翻得不错，但是有一些逻辑和固定搭配上的错误 像几率增大，应该用raise而不是increase来搭配possibility Doping leads to changes in energy band structure and thus forming many intermediate states between valence bands and inverted bands. Thermal relaxation often occurs and electrons jump to the intermediate states after electronic transition ,and then electrons go back to valence bands to combine with electron holes as a result of further relaxation or transition.Obviously, thermal relaxation is more likely to occur with more intermediate states, namely the recombination of electron holes becomes much more serious. To a certain extent, we expect the intermediate states exsit , because it will raise the possibility of electronic transition. However, it is a contradiction that the electron holes recombine with each other after electronic transition. |
6楼2009-06-09 10:06:40
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woshibadchen(金币+5,VIP+0):谢谢了,呵呵 6-10 15:41
woshibadchen(金币+5,VIP+0):谢谢了,呵呵 6-10 15:41
| Doping leads to changes in energy band structure and thus forming many intermediate states between valence bands and inverted bands. Thermal relaxation often occurs and electrons jump to the intermediate states after electronic transition ,and then electrons go back to valence bands to combine with electron holes as a result of further relaxation or transition.Obviously, thermal relaxation is more likely to occur with more intermediate states, namely the recombination of electron holes becomes much more serious. To a certain extent, we expect the intermediate states （should） exsit , because it will raise the possibility of electronic transition. However, it is a contradiction that the electron holes recombine with each other after (the) electronic transition. |
7楼2009-06-09 22:26:32
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8楼2009-06-09 23:30:23
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9楼2009-06-10 11:11:38