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GDHLl

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[求助] 英文不好,大家帮看看要补哪些数据 已有1人参与

The second claim to the title of the article and its conclusions concern the declaration of the properties of the compound obtained. The author is called the Mg2Si semiconductor compound, but no evidence is given. Only references to the literature and to the correspondence of the structure. However, in their study found the conditions of strong oxidation of the compounds obtained. There is no attempt to establish whether the residual oxygen concentration affects the conductivity and Hall effect of the grown films.



I believe that in this form, without additional temperature measurements of conductivity and the Hall effect, it is impossible to recommend an article for printing.

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GDHLl

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引用回帖:
2楼: Originally posted by cvd-cheng at 2019-05-03 17:56:05
补Mg2Si结构数据,比如XRD,TEM, SEAD,补变温导电性和变温霍尔效应

谢谢你,xrd和sem有了,我做的是不同退火温度和不同退还火时间的,每个样品的变温霍尔效应和变温电导率都要补是?还有一个问题是,我在硅衬底镀的镁膜,这样测硅镁膜电导率和霍尔效应可行?担心衬底影响

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cvd-cheng

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GDHLl(liouzhan654代发): 金币+1, 感谢交流 2019-05-03 18:54:51
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