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¡¾ÇóÖú¡¿ÇóһƪÎÄÏ×On the photoionization of deep impurity centers in semiconduct
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ÊDz»ÊÇ Photoionization of deep impurity centers in semiconductors Robles, V. Gonzalez; Cruz, G. Gonzalez Physical Review B, vol. 41, Issue 8, pp. 5131-5137 The frequency dependence of the photoionization cross section for deep semiconductor impurity centers is calculated using a quantum-defect wave function with the correct normalization for the bound state. The effects of nonparabolicity of the conduction and valence bands are included by using an expression for the energy-dependent wave vector based on the k.p approximation. Comparison with experiment has been made for the photoionization of manganese and copper impurities in gallium arsenide. DOI: 10.1103/PhysRevB.41.5131 |

2Â¥2009-04-08 16:09:34
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3Â¥2009-04-08 16:10:16
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4Â¥2009-04-08 16:10:35














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