| ²é¿´: 1154 | »Ø¸´: 8 | |||
| µ±Ç°Ö÷ÌâÒѾ´æµµ¡£ | |||
moueor½ð³æ (СÓÐÃûÆø)
|
[½»Á÷]
ATK Workshop¡¤China¡¤2009
|
||
|
±±¾©ºê½£¹«Ë¾ ATK Workshop¡¤China¡¤2009 ʱ¼ä£º2009Äê3ÔÂ30ÈÕÉÏÎç9£º00 µØµã£º¹ú¼ÒÄÉÃ׿ÆÑ§ÖÐÐĶþÂ¥»áÒéÊÒ¡¤±±¾© ±¨¸æÈË£ºDr. Kurt Stokbro ÊýÖµ¼ÆËãºÍÆ÷¼þ·ÂÕæÒѾ³ÉΪµ±½ñÄÉÃ׿ÆÑ§Ñо¿£¬ÓÈÆäÊÇÄÉÃׯ÷¼þÑо¿µÄÖØÒª×é³É²¿·Ö£¬ÆäÖØÒªÐÔÔ½À´Ô½µÃµ½¹ã´óÑо¿ÕßµÄÈÏͬ¡£Í¨¹ýÄ£ÄâºÍ¼ÆËãÀ´ÃÖ²¹ÊµÑé²âÁ¿µÄ²»×㣬Õâ¿ÉÒÔÓÐЧµØÐÖúÄÉÃ×ÁìÓò¿ÆÑй¤×÷Õ߸üÉîÈëµØÁ˽âÄÉÃ×ϵͳµÄ±¾Õ÷ÌØÐÔºÍÕæÊµÐÐΪ¡£ ATK£¨Atomistix ToolKit£©Èí¼þÊÇĿǰΨһ¿ÉÒÔ¼ÆËãÄÉÃ׽ṹÌåϵºÍÆ÷¼þ×°ÖÃÊäÔËÐÔÖʵÄÉÌÒµ»¯Èí¼þ£¬Óɱ±¾©ºê½£¹«Ë¾ÌṩרҵµÄÊÛºó¼¼ÊõÖ§³Ö·þÎñ£¬ÎªÄÉÃ׿ÆÑÐÁìÓòÑо¿ÕßÌṩÁËÒ»¸öÇ¿´óµÄ¼ÆËãÄ£Ä⹤¾ß¡£ ´Ë´Î±¨¸æÌØÑûATKÈí¼þÖ÷ÒªÑз¢ÕßÖ®Ò»Kurt Stokbro½ÌÊÚ½éÉܸÃÈí¼þϵͳµÄ¼ÆËãÔÀíºÍÌØÐÔ£¬ÒÔ¼°×îеÄÓ¦Ó÷¶Àý¡£Ä¿µÄÊÇÃæÏò¹ã´óʵÑéºÍÀíÂÛ¹¤×÷Õߣ¬¾Í»ùÓÚµÚÒ»ÔÀíºÍ°ë¾ÑéÄ£Äâ·½·¨ÔÚÄÉÃ׽ṹºÍÄÉÃׯ÷¼þÐÔÖʵÄÔ¤²âºÍÀí½â·½Ãæ½øÐÐÉî²ã´ÎµÄ½éÉܺͽ»Á÷¡£ ÔÚ´Ë£¬±±¾©ºê½£¹«Ë¾³ÏÖ¿µØÑûÇë¸÷λÐÂÀÏÓû§¼°¸÷¿ÆÑÐÔºËù¡¢¸ßµÈԺУҵ½çͬÈʽ»Á÷ºÍÖ¸µ¼£¡ ±±¾©ºê½£¹«Ë¾ 2009-3-23 *¹ú¼ÒÄÉÃ׿ÆÑ§ÖÐÐĵØÖ·£º±±¾©º£µíÖйش山һ½Ö2ºÅ workshopÏêÇéÇë¼û¸½¼þ(about the talk, speaker & software)¡£ Talk Abstract Using Ab initio and semi-empirical modelling to assist both theoreticians and experimentalist in predicting and understanding the behaviour of nanoscale devices. As the dimensions of electronic devices are rapidly decreasing, there is a need for a new generation of modeling tools that can accurately calculate the electrical properties of devices where atomic scale details and quantum effects are important. A promising framework for such calculations is density functional theory within the nonequilibrium Green's function formalism (NEGF-DFT) [1,2]. In this presentation we present the basic framework and applications of the formalism. In addition, for the formalism to be applied in semiconductor device modeling it needs to be able to handle many thousands of atoms. We discuss new developments and future aspects [3,4] of the method important for semiconductor device modeling; in particular we show that for important classes of systems the approach scales linearly with the system size. Insights gained when modeling the electrical properties of nanoscale devices will be illustrated through the results obtained for Si Nanowire, spin dependent devices, leakage current through ultra thin oxide barriers and carbon based electronics (carbon nanotubes/graphene). References: 1. M. Brandbyge, J.-L. Mozos, P. Ordej¨®n, J. Taylor, and K. Stokbro, Phys. Rev. B 65, 165401 (2002) 2. K. Stokbro, J. of Physics Cond. Mat. 20, 064216 (2008). 3. H. H. B. Søensen, P.C. Hansen, D.E.Petersen, S. Skelboe and K. Stokbro, Efficient wave function matching approach for quantum transport calculations, preprint http://xxx.lanl.gov/abs/0804.4306 4. D. E. Petersen et. al., A hybrid method for the parallel computation of Green's functions, Preprint. About the Speaker Dr. Kurt Stokbro Summary of professional activities Entrepreneur and researcher with focus on atomic-scale simulations; Co-founder and CEO of Atomistix Aps, Atomistix Inc., QuantumWise A/S Organizer of research projects with total USD 5 million in funding; Large network of researchers in academia and industry in Europe, USA and Asia. Formerly a Professor with the Copenhagen University, Denmark; Recognized researcher with 58 publications in refereed journals, >1500 citations and 28 invited talks at international conferences. Member of the scientific advisory board of IRC in Nanotechnology (University of Cambridge, University College London and the University of Bristol) and the scientific advisory board of Center for Atomic-scale Materials Design (CAMD), Technical University of Denmark. Participation in the modeling section of the International Technology Roadmap for Semiconductors (ITRS); Organizer of 3 conferences within atomic-scale simulations; About the Software First-principles simulation software for nanoscience QuantumWise software is used to model the electronic structure of molecules, crystals, and surfaces. It is distinguished by its unique capability to simulate electrical transport in nanodevices, and its ability to treat large-scale systems. The software is actively used in a wide range of application areas such as: •Molecular electronics •Carbon nanotubes and graphene •Nanowires •Magnetic System •Bulk and nanoscale semiconductors •Surface electrochemistry •Computational material science The QuantumWise platform, based on an open architecture which integrates a powerful scripting language with a GUI platform consists of a core component called Atomistix ToolKit (ATK) and a user-friendly graphical interface called Virtual NanoLab. It provides simple and intuitive access to state-of-the-art atomic advanced modeling techniques such as nonequilibrium Green's functions (NEGF) and density functional theory (DFT) thus allowing the user to focus on the physical properties of the systems under investigation instead. Regardless if you are an expert in DFT or an experimentalist, the program provides intuitive and comprehensive tools making it possible to easily model the geometry, electronic structure and electrical properties of nanoscale system. For more information, kindly refer to www.hongcam.com.cn |
» ²ÂÄãϲ»¶
µ÷¼Á
ÒѾÓÐ20È˻ظ´
0703»¯Ñ§
ÒѾÓÐ32È˻ظ´
286Çóµ÷¼Á
ÒѾÓÐ9È˻ظ´
Çóµ÷¼Á
ÒѾÓÐ7È˻ظ´
278Çóµ÷¼Á
ÒѾÓÐ24È˻ظ´
²ÄÁÏÀà284µ÷¼Á
ÒѾÓÐ19È˻ظ´
Ò»Ö¾Ô¸0703»¯Ñ§ÕÐ61×îÖÕÅÅÃû62»¯Ñ§Çóµ÷¼Á
ÒѾÓÐ14È˻ظ´
Çóµ÷¼Á
ÒѾÓÐ13È˻ظ´
299Çóµ÷¼Á
ÒѾÓÐ3È˻ظ´
»úеר˶273ÇëÇóµ÷¼Á
ÒѾÓÐ6È˻ظ´
» ±¾Ö÷ÌâÏà¹ØÉ̼ÒÍÆ¼ö: (ÎÒÒ²ÒªÔÚÕâÀïÍÆ¹ã)
TIGERYZZ
½ð³æ (СÓÐÃûÆø)
- Ó¦Öú: 0 (Ó×¶ùÔ°)
- ¹ó±ö: 0.009
- ½ð±Ò: 867.9
- É¢½ð: 12
- ºì»¨: 1
- Ìû×Ó: 249
- ÔÚÏß: 38.6Сʱ
- ³æºÅ: 488084
- ×¢²á: 2007-12-29
2Â¥2009-03-23 13:55:44
nh13
ľ³æ (ÕýʽдÊÖ)
- Ó¦Öú: 9 (Ó×¶ùÔ°)
- ½ð±Ò: 13147
- É¢½ð: 402
- ºì»¨: 3
- Ìû×Ó: 913
- ÔÚÏß: 254Сʱ
- ³æºÅ: 143233
- ×¢²á: 2005-12-22
- רҵ: ÉúÎïÎïÀí¡¢ÉúÎﻯѧÓë·Ö×Ó
3Â¥2009-03-23 14:38:12
iamddba
Ìú¸Ëľ³æ (ÕýʽдÊÖ)
- Ó¦Öú: 0 (Ó×¶ùÔ°)
- ½ð±Ò: 7655.2
- Ìû×Ó: 343
- ÔÚÏß: 111.1Сʱ
- ³æºÅ: 601558
- ×¢²á: 2008-09-13
- ÐÔ±ð: GG
- רҵ: ÀíÂۺͼÆË㻯ѧ
4Â¥2009-03-23 16:18:38
moueor
½ð³æ (СÓÐÃûÆø)
- 1STÇ¿Ìû: 1
- Ó¦Öú: 0 (Ó×¶ùÔ°)
- ½ð±Ò: 1233.6
- ºì»¨: 1
- Ìû×Ó: 157
- ÔÚÏß: 16.3Сʱ
- ³æºÅ: 485186
- ×¢²á: 2007-12-27
- רҵ: ·ÖÀë¹ý³Ì
5Â¥2009-03-23 16:49:14
lxmn
ľ³æ (СÓÐÃûÆø)
- Ó¦Öú: 2 (Ó×¶ùÔ°)
- ½ð±Ò: 1916.4
- É¢½ð: 109
- ºì»¨: 2
- Ìû×Ó: 279
- ÔÚÏß: 139.1Сʱ
- ³æºÅ: 534407
- ×¢²á: 2008-03-27
- ÐÔ±ð: GG
- רҵ: ÀíÂۺͼÆË㻯ѧ
6Â¥2009-03-24 17:04:37
moueor
½ð³æ (СÓÐÃûÆø)
- 1STÇ¿Ìû: 1
- Ó¦Öú: 0 (Ó×¶ùÔ°)
- ½ð±Ò: 1233.6
- ºì»¨: 1
- Ìû×Ó: 157
- ÔÚÏß: 16.3Сʱ
- ³æºÅ: 485186
- ×¢²á: 2007-12-27
- רҵ: ·ÖÀë¹ý³Ì
7Â¥2009-03-26 09:23:03
moueor
½ð³æ (СÓÐÃûÆø)
- 1STÇ¿Ìû: 1
- Ó¦Öú: 0 (Ó×¶ùÔ°)
- ½ð±Ò: 1233.6
- ºì»¨: 1
- Ìû×Ó: 157
- ÔÚÏß: 16.3Сʱ
- ³æºÅ: 485186
- ×¢²á: 2007-12-27
- רҵ: ·ÖÀë¹ý³Ì
8Â¥2009-04-02 14:11:04
1
![]() |
9Â¥2009-04-02 18:49:09














»Ø¸´´ËÂ¥
