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silvaco
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- ×¢²á: 2014-07-20
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ÏÂÃæÊdzÌÐògo athena line x loc=-2 spac=0.2 line x loc=0 spac=0.8 line x loc=20 spac=0.8 line x loc=22 spac=0.2 line y loc=0.3 spac=0.01 line y loc=0.68 spac=0.1 line y loc=1.18 spac=0.1 init silicon c.boron=1e15 thick=0.5 orientation=100 deposit oxide thick=0.38 divisions=19 ydy=0.02 deposit silicon thick=0.3 divisions=10 ydy=0.01 illumination i.line lambda=0.4 #¹âԴΪiÏß illum.filter clear.fil circle sigma=0.38 transmit=0.1 #ÖØÖÃÂ˲¨ÁбíÔ²ÐÎÂ˲¨²ÎÊý͸ÉäÂÊ projection na=.54 pupil.filter clear.fil circle # layout x.lo=0 z.lo=0 x.hi=24 z.hi=1 image clear win.x.lo=-2 win.z.lo=0 win.x.hi=0 win.z.hi=1 dx=-1 one.d structure outfile=imal.str intensity mask init silicon orient 100 c.boron=1e15 two.d deposit nitride thick=0.02 div=5 deposit name.resist=OiR897i thick=0.5 divisions=10 rate.dev name.resist=OiR897i i.line c.dill=0.016 expose dose=240.0 num.refl=20 bake time=30 temp=100 develop kim time=50 steps=5 etch nitride thick=0.02 implant boron energy=5.7 dose=1e20 tilt=7 pears s.ox=0.001 etch name.resist=OiR897i all etch nitride all # save outfile=dif4.str tonyplot dif4.str ·¢×ÔСľ³æAndroid¿Í»§¶Ë |
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