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英国卡迪夫大学 Cardiff University Prof. Diana Huffaker 招聘 MOVPE 博士后 已有1人参与
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Research Associate in Advanced Epitaxy for Integrated Optoelectronics 6768BR School of Physics & Astronomy Research Advert Research Associate in Advanced Epitaxy for Integrated Optoelectronics Cardiff University leads the Engineering and Physical Sciences Research Council (EPSRC) funded Future Compound Semiconductor Manufacturing Hub (Hub), part of the UK-based Compound Semiconductor Cluster, with three academic partners: University College London (UCL), the University of Manchester and the University of Sheffield. The Hub utilises Europe-leading facilities at the Institute for Compound Semiconductors (ICS) and Compound Semiconductor Centre (CSC), translating research into large-scale Compound Semiconductor (CS) growth and device fabrication. As part of the Hub/ICS, we are seeking to appoint a talented, motivated postdoctoral researcher with expertise in advanced epitaxial methods for integrated optoelectronic devices and systems. The Research Programme The envisioned research targets Metal Organic Vapour Phase Epitaxy (MOVPE) to advance the field of Integrated Optoelectronics. Our applications focus on a compound semiconductor (III-V) on Silicon platform to develop systems for communication, remote sensing, medical imaging and quantum technology with local, UK and industrial collaborations. Several related positions in integration, optoelectronics and photonics are open in parallel to support the Hub, ICS, and the larger CS Connected cluster forming in Wales. For background, the ICS forms part of > ￡300m investment in new research and innovation centres, and its potential is already recognised by the Welsh and UK governments, who have invested over ￡29m towards its creation. The ICS will be a unique facility in Europe, equipped with epitaxy, state-of-the art fabrication and device characterisation facilities. Stimulated by demand for creative and professional prototyping service, the ICS provides an environment to grow academic research and industrial projects. Qualifications and Experience Candidates will have a PhD in Engineering, Physics or closely-related subject focusing on III-V MOVPE processes applied to advanced optoelectronic devices. Experience epitaxy of III-Arsenic(As), Antimony(Sb) or Phosphorous (P) compounds is absolutely essential. Epitaxial integration on Silicone, lattice-mismatched materials along with patterned or nanoepitaxy are highly desirable. You will have a strong research record demonstrated through publications in high quality academic journals; experience participating in research proposals and research/industry-based groups with proven ability to network effectively with academics and outside academia. Please submit with your completed application and your full CV. We also require a statement of research interests and career goals (2 pages max). For informal enquiries please email Professor Diana Huffaker on HuffakerDL@cardiff.ac.uk. For more information about working at Cardiff University contact Glesni Lloyd on LloydGW@cardiff.ac.uk This post is full-time and fixed term for 3 years. Salary: ￡32,584 - ￡38,833 per annum (Grade 6) Date advert posted: Thursday, 30 November 2017 Closing Date: Thursday, 11 January 2018 |
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