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•        ´óÀÏ°åÊÇStephen PennycookµÄµÜ×Ó£¬¶þÀÏ°åÊÇÃÀ¹ú¹¤³ÌԺԺʿ
•        ·¢±íÂÛÎÄ£¨²©Ê¿Æڼ䣩£º3ƪACTA Materialia, 4ƪMicroscopy and Microanalysis, 1ƪACSNano, 1ƪChemistry of Materials, 1ƪultramicroscopy£¨·âÃ棩
•        Reviewer: Acta Materialia, Materials Science and Engineering A; Materials Characterization
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1.        Introduction
a.        IntroductionµÄÎÄÏ×£¬ÎÒ¼û¹ýÕû¸öintroductionÖ»ÒýÓÃÁË7ƪ¡£ÄÇôÎÊÌâÀ´ÁË£¬7ƪÎÄÏ×µÄpaper¾ÍÊÇ»µpaper?  µ±È»²»ÊÇ£¬µ«ÊÇÕâ¸öÕæµÄ»áÈÃreviewer¸Ð¾õ²»ºÃ¡­ ¿Ï¶¨²»»áÒòΪÕâ¸öreject paper£¬µ«ÊÇ¿´ÄãÓàÏÂpaperµÄÐÄ̬»á±ä£¬»áϲ»¶Ìô´Ì
b.        ÎÒ¼û¹ýintroductionÀïÃæдÁËÒ»¸öºÜÏêϸµÄliterature review£¬Ïêϸµ½ÎÒ¿´Á˶¼¸Ð¶¯¡£µ«ÊÇÄãÒªÖªµÀliterature reviewµÄÄ¿µÄÊÇΪÁËʲô£¿ÊÇΪÁËÍ»³öÄã×öÕâ¸ö¶«Î÷Å£B£¬±ðÈ˶¼²»ÖªµÀ£¬¶¼²»»á£¡Õâ¸ö²ÅÊÇÖص㣬ÓÐЩpaper°Ñ±ðÈË×öµÄ¶«Î÷һͨreview£¬½á¹ûµ½ÁË×îºóд×Ô¼ºworkÕâÀïÒ»±Ê´ø¹ý¡£»òÕßÊÇдÁË×Ô¼ºµÄwork£¬µ«ÊÇÈÃreviewer¸Ð¾õµ½¸úÇ°ÃæµÄreviewûÓÐëÁªÏµ£¬ÕâÑùÒ²ºÜ³£¼û¡£¶ÔÓÚÕâÖÖÊÂÇéÎÒ¸øÒ»¸ö½¨Ò飬paperдÍêÁËÄøøÄãµÄÅ®ÅóÓÑ£¬»òÕߺÃÅóÓѶÁһϡ£Èç¹û¿´ËûÃÇ¿´ÍêÁËintro£¬ÂýÂýµØ̧ÆðÍ·ÏòÄãͶÀ´³ç¾´µÄÄ¿¹â¡£ÄÇô¹§Ï²Ä㣬introд³É¹¦ÁË£¡
c.        »¹ÓоÍÊÇliterature review²»ÐèҪдµÄÌ«¹ã£¬ÐèÒªµÄÊÇÉî¶È¡£±ÈÈç¹û˵ÄãÊÇ×ö6061ÂÁºÏ½ðµÄ£¬Äã¾Íֻд6061²»ÒªÐ´±ðµÄ5XXX¡£±ðµÄ5XXX¶¼ÊdzôÑõ²ã×Ó£¬Ð´ÁËÖ»»áÈÃreviewer¾õµÃÄãÔÚ´Õ×ÖÊý¡£Èç¹û˵ȫÊÀ½çÎÒÊǵÚÒ»¸ö×ö6061µÄ£¬Ã»·¨Ð´literature reviewÔõô°ì£¬Äã¾Íʹ¾¢Ç¿µ÷Õâ¸öÊÂÇé¡£ÔÚintroÀï²»°ÑÕâ¸öÊÂÇé˵3´ÎÄã¾ÍÊäÁË¡£ÎÒ¾­³£¿´Íêintro×î´óµÄÎÊÌâÊÇ£¬ÃæÉÏ¿´ËùÓж«Î÷¶¼¹æ¹æ¾Ø¾ØµÄûÎÊÌâ¡£µ«ÊÇÎÒ¾ÍÊDz»ÖªµÀ×÷ÕßÕâ¸öpaperÅ£BÔÚÄÄÀƾʲôҪÈÃÕâ¸öpaper·¢±í¡£ËùÒÔÀÏÌúÃÇ£¬¸Ã´µµÃʱºòÒª´µ°¡£¡£¡¶øÇÒ²»ÊÇÖ»´µ1´Î¡£ÄãÒª·´¸´µÄÇ¿µ÷ÎÒÕâ¸ö¶«Î÷Å£B£¬ÒòΪXXXXX¡£Ç±ÒÆĬ»¯µÄÈÃreviewer½ÓÊÜÄãpaperºÜÖØÒª£¬ºÜÅ£BÕâ¸öÊÂʵ£¡ÇÄÇĵؽ¨Á¢ºÃÓ¡Ï󣡣¡£¡
d.        ¶àÓÃÊý×Ö£¬²»Òª¿í·ºµÄÃèÊö¡£Õâ¸öÎÊÌâ±ðµÄreviewerÒ²¸úÎÒÌáµ½¹ý¡£¾­³£¼ûµ½author˵ÎÒµÄ×öµÄ²ÄÁϸüºÃ£¬ÒòΪËü±ÈB²ÄÁÏÓÐhigher strength¡£Çë×¢ÒâÄãÊÇÔÚд¿ÆÑÐÂÛÎÄ£¬ÇëÓÃÊý×Ö˵»°£¡higher£¬lower£¬better, weaker, strongerÕâÖÖ´ÊÊǸøÎÄ¿ÆÉúÓõġ£Èç¹ûÄãÊÇ˵higher strengthÇë¼ÓÉϾßÌåµÄÇ¿¶ÈÊýÖµÓÃÀ´±È½ÏÁ½ÖÖ²ÄÁÏ¡£»¹ÓÐÒ»ÖÖÀàËƵÄÇé¿öA has some superior properties compare to B. ɶproperties°¡£¿Ä㲻˵ÎÒÕ¦ÖªµÀ£¿ÊÇÇ¿¶ÈÂð£¿ÊÇÓ²¶ÈÂð£¿ÕâÖÖ¾ÍÊÇÎÒËù˵µÄ»á¸øreviewerÁôϲ»ºÃµÄÓ¡Ïó£¬Ó¡Ï󲻺Ãpaper¾ÍÈÝÒ×±¯¾ç¡£ÄܹÖreviewer²»¿Í¹Û£¬´ø×ÅÓÐÉ«ÑÛ¾µ¿´ÈË£¿ÏëÏëÎÒÃÇ×Ô¼º¶Ô±ðÈËÓ¡Ï󲻺õÄʱºò»áÔõôÑù°É£¬Õâ¸ö¹Ö²»µÃ±ðÈË
e.        ÈçºÎÒýÓÃ×Ô¼ºµÄÂÛÎÄ£¬Õâ¸öÊÂÇéÊÇÇ°¼¸ÌìÒ»¸öÃÀ¹úµÄreviewer¸úÎÒ±§Ô¹µÄ¡£Ò»Î»Öйúͬ°ûÔÚintroÌá¼°ÁË×Ô¼ºÖ®Ç°µÄÂÛÎÄÈ¡µÃµÄ³É¹û£¬È»ºó˵ĿǰÕâ¸öpaperÊÇ»ùÓÚ֮ǰµÄstudy»ù´¡ÉÏÕ¹¿ªµÄ¡£µ«ÊÇËûÒýÓÃ×Ô¼ºµÄ¶¼ÊÇÖÐÎÄÂÛÎÄ£¬reviewerÏÂÔØÏÂÀ´Ò»¿´³ýÁËabstractÊÇÓ¢ÎÄÆäÓàÈ«ÊÇÖÐÎÄ¡­ Ðֵܰ¡£¬ÄãÈ¥ÕÒһƪº«¹úÂÛÎÄÏÂÀ´¿´¿´¸ÐÊÜÒ»ÏÂreviewerµ±Ê±µÄÐÄÇé¡£¡£¡£ ÖÐÎÄÂÛÎÄ¿ÉÒÔÒý£¬µ«ÊÇÇ°ÌáÊÇ£º1. ÄãÒª°ÑÄãÂÛÎijɹûдµÄÏêϸµã£¬ÕâÑùreviewer¾Í²»»áÐèÒªÔ­ÎÄÁË£¨reviewerÒ²ÊÇÈË£¬Ò²ÊÇÍϼҴø¿ÚÿÌìÒ»¶ÑpÊ£¬Äã°Ñ¸Ã˵µÄ¶¼ËµÁË£¬Ëû²ÅÀÁµÄ×Ðϸ¿´ÄãÒýÎÄÄØ£©¡£2. ±ðÒýÌ«¶à£¬ÄãÒ»ÏÂÒý3-4ƪ֮ǰ·¢ÔÚÖÐÎÄÔÓÖ¾ÉÏpaper£¬reviewerÖ»»áÈÏΪÄãÕâ¸ö¹¤×÷µÄÖÊÁ¿µÍ¶ÔÄã²úÉúÆ«¼û£¨ÎÒÕâÀï²»ÊǹòÌòÍâ¹úµù£¬´ó¼ÒÓÐÖÊÁ¿ºÃµÄÂÛÎÄÒ²¶¼ÊÇÏÈÏë×Å·¢Ó¢ÎÄÔÓÖ¾°É£¿ÎÒÖªµÀÖÐÎÄÔÓÖ¾Ò²ÓкÃÎÄÕ£¬µ«ÊǾÍ×ÜÌåÖÊÁ¿À´¿´Ó¢ÎĵÄÂÛÎĸü¸ßÒ»µãÕâ¸öûÓÐÒìÒé°É£©
2.        Experimental procedure
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a.        ²ÄÁϵÄÖÆÔìÉÌ£¬±ÈÈçÂÁ¶§»òÕßÂÁ·Û¡£ÓÐЩÈ˾ÍдÎÒÕâ¸öÓõÄ6061ÂÁ¡£Óöµ½ÕâÖÖÇéÎÒ¶¼»áÈÃ×÷ÕßÌṩÂÁ·ÛµÄÖÆÔìÉÌÐÅÏ¢µ½Experimental procedure, ²»È»ÄãÔõôÈÃÎÒÖظ´ÄãµÄʵÑ飿ÄãÕæÒÔΪA¼Ò¸úB¼ÒµÄ6061ÊÇ100%µÄÒ»Ñù£¿
b.        AnnealÖ»¸øtemp¡£ÄãÊǯ×Óµ½Î¶ȲŰÑÑùÆ··Å½øÈ¥µÄ£¿»¹ÊÇÑùÆ·Ëæ¯×ÓÒ»ÆðÉýεģ¿Èç¹ûÊǺóÕßÄã¯×ÓµÄÉýÎÂËÙÂÊÊǶàÉÙ£¿AnnealʱºòµÄÆø·ÕÊÇʲô£¿È»ºó¾«²ÊµÄµØ·½À´ÁË£¬Õâһλacta µÄreviewerÇ׿ڸúÎÒ˵µÄÊÂÇé ¡°ÄãÇ°ÃæдµÄ¶¼Í¦ºÃ£¬ÎÒ¿´paperµÄdataÒ²¶¼ºÃ¾Íûʲô¡£ÄãÇ°ÃæдµÄÂÒÆß°ËÔ㣬һ¸öintroÎÒ¿´ÁËÒ»ÉÏÎç²Å¿´Ã÷°×¡£ÎҾͻáÎÊÄ㣺ÄãannealʱºòµÄѹÁ¦ÊÇʲô£¿Äãanneal¯×ӵijߴçÊǶàÉÙ£¬Äã²ÄÁϵijߴçÊǶàÉÙ£¿Èç¹ûÄãÊǸö´ó¯×ÓÄãÈçºÎ±£Ö¤Äã¯×ÓÄÚ²¿µÄÎÊÌâÊÇuniformµÄ£¿¡±ÕâÖÖÎÊÌâ²»ÊÇ´óÎÊÌ⣬¾ÍÊÇÈÃÄãÄÑÊÜһϡ£¶øÇÒÈ˼ÒreviewerÎʵÄÒ»µã벡ҲûÓС£ÕâÑùµÄÎÊÌâÀۼƶàÁË£¬reviewer¾Í¿ÉÒÔrejectÄãµÄpaper¡£Ö±½Ó¸úeditor˵Õâ¸öpaperÐèÒªtoo much work²»ÈçÖ±½Óreject¡£ËùÒÔÎÒÔÙ´ÎÇ¿µ÷һƬ£¬ÂÛÎÄ·¢±íÓÚ·ñ²»ÔÚÓÚÄãÊý¾ÝÊDz»ÊÇƯÁÁ£¬ÔÚÓÚÄãÊDz»ÊÇ°ÑÕâЩϸ½Ú×öºÃÁË¡£²»Òª¾õµÃÄãµÄÊý¾ÝºÃ£¬ÔÓÖ¾Éç¾ÍÓÐÒåÎñÈÃÂÛÎÄ·¢±í
c.        TEM SEM±íÕ÷£¬ÒòΪÎÒÊÇרÃÅ×öTEMµÄËùÒÔÕâÀïºÜÌôÌÞ¡£´ó²¿·ÖeditorûÎÒÕâô¶à벡£¬µ«ÊÇÎÒÏë˵µÄÊÇÄãÈç¹ûintroдµÄÌرðºÃ£¬²ÄÁÏÖƱ¸Ò²Ð´µÃÌرðºÃÕâÀïÎÒ¿ÉÄܾͷŹýÈ¥ÁË¡£ÄãÇ°Ãæ¸øÎÒÁËÒ»¸öhardtimeÎÒÕâÀï¾Í»áÌôÌÞЩ¡£ÎÒ½¨Òé´ó¼ÒÕâÑùÈ¥ÏëÄÇЩreviewer£ºËûÃǶ¼ÊÇÆÕͨÈË£¬¼ÓÉÏ¿Æѧ¼Ò¶¼ÊÇÆ«Ö´¿ñ£¬Ð¡ÐÄÑÛ£¡ºÃÁËÑÔ¹éÕý´«£¬Èç¹ûÊÇÆÕͨµÄpaperÖ»ÊÇÓÃtem»òÕßsemÕÕÁ˼¸ÕÅ£¬ÎÒ»áÒªÇóÌṩTEM/SEMµÄÐͺţ¬acceleration voltage, ÓõÄʲôdetector £¨semµÄ»°¾ÍÊÇBSE£¬SE£»STEMÈç¹ûÊÇHAADFÎÒ»áÎÊconvergence angle£©¡£ÄãÃÇ¿ÉÄܾõµÃÎÒÑϸñ£¬µ«ÊÇÕâÑùÎÊÒ»µãû벡¡£¶ÔExperimental procedure ÒªÇó¾ÍÊÇÒÀ¾ÝÄãÌṩµÄÐÅÏ¢±ðÈË¿ÉÒÔÖظ´ÄãµÄʵÑ顣ûÓÐÕâЩ²ÎÊýÄãÔõôÖظ´? Èç¹ûÊÇһƪרÃÅ×ötem²ÄÁϱíÕ÷µÄÎÄÕ£¬ÎÒ»¹»áÎʵĸüϸһЩ£¬µ±È»ÄǶ¼ÊǺó»°
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     Nickel and gold film were sequentially deposited onto Si substrates each with a nominal thickness of 30 nm. Prior to metal film deposition a 12 nm SiO2 thick layer was thermally grown on the (100) surface of silicon substrates to avoid silicide formation. Ni films were deposited at room temperature by DC magnetron sputtering at a power of 100W, a base pressure of 1.7108 Torr, and an Ar atmosphere of 2 mtorr. The corresponding sputter rate was 1.4 Ås1. Au films were subsequently deposited on top of Ni at room temperature, using a Denton vacuum desk II cold sputtering unit. Au sputtering was performed at a base pressure of 20 mtorr, and an Ar pressure of 75 mtorr. The sputtering current was set at 23 mA resulting in sputtering rates around 2.5 Ås1. Prior to deposition the SiO2/Si substrates were cleaned by sonication in methanol and deionized water immediately before insertion into the deposition chamber.
    The as grown samples were annealed in a three-zone tube furnace (Lindberg) at a base pressure of 6X10^-6 Torr at 675 ¡ãC for 1 hour. To avoid contamination the samples were placed in an alumina boat during annealing. Fast heating and cooling were achieved by pushing and withdrawing the quartz tube containing the samples into and out of the hot zone of the furnace [21]. Cross-sectional TEM specimens were prepared by standard FIB lift-out techniques [22,23] using a FEI Scios dual-beam instrument.
    Film morphology and microstructures were characterized using a JEOL JEM-2500SE transmission electron microscope. STEM annular
dark field (ADF) imaging was carried out with a FEI Titan G2 80- 200 at FEI Company (Hillsboro, OR) and an aberration corrected JEOL JEM 2100F/Cs scanning transmission electron microscope at UC Davis. All microscopes were operated at 200 kV. TEM specimens were imaged in an edge-on orientation, i.e., the <110> direction of the Si substrate was parallel to the incoming electron beam.
     EDXS elemental distribution maps were acquired using the FEI Super-X EDX detector attached to a FEI Titan G2 80-200, which was installed at FEI Company. EELS line scans were acquired using a Gatan Tridiem spectrometer attached to the aberration corrected JEOL JEM 2100F/Cs instrument.
     Crystalline orientation maps were used to study the crystalline orientation of Ni and Au grains along the interface. PED was performed using the JEO JEM 2100F/Cs equipped with theNanoMEGAS Digistar hardware controlled by the Topspin™ precession control platform (AppFive LLC, Arizona). Th step size was 1 nmwith precession angle of 0.5¡ã. Detailed information regarding the underlying physics of this technique are reported elsewhere [24¨C26]. The electron diffraction patterns were recorded from 25 different areas of one TEM sample. The width of the polycrystalline ring in each electron diffraction pattern was measured three times independently and calibrated using the simultaneously acquired silicon diffraction signal. The calculated lattice spacing was compared with tabulated values of bulk Ni to calculate strain. The stress was then determined based on the following equation:

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2.1. Materials synthesis
ÎÒÃÇ×é²»×ö²ÄÁÏÖƱ¸£¬µ«ÊÇÎÒÒÀÈ»½«80%µÄʵÑéϸ½Ú¶¼ÁгöÀ´ÁË¡£Ê²Ã´ÑùÊÇ80%ÄØ£¿ÎÒ¾Ù¸öÀý×Ó²ÄÁϵÄÍË»ð´¦Àí£¬80%ÒâζÎÒ»á°ÉÍË»ðζȣ¬Ê±¼ä£¬Æø·Õ£¬Ñ¹Á¦È«²¿ÁгöÀ´¡£Ê£ÏÂ20%´ó¸Å¾ÍÊǯ×ÓÓõÄʲôÐͺŵģ¬Â¯×ÓµÄÉýÎÂËÙÂÊ¡£80%µÄ³Ì¶È¾ÍÊǶÁÕß¿´ÁËÎÄÕÂÒÔºóÓÐ100%µÄÐÅÐÄÖظ´ÄãµÄʵÑé¡£µ«ÊÇÖ±µ½ËûÃÇ¿ªÊ¼¶¯ÊÖ×öÁ˲ŷ¢ÏÖÆäʵ»¹ÊDzîÒ»µãÐÅÏ¢²»ÖªµÀ£¬Õâ¾ÍÊÇ80£¥£¡
ΪʲôֻÁÐ80%²»ÁÐ100%£¿Ê×ÏÈ£¬ÕâÑùÎÒ¿ÉÒÔÌáµ½²ÄÁÏÊǺÏ×÷ÈËÌṩµÄ£¬ÕâÑùËãÊÇacknowledgeÎҵĺÏ×÷Õß±ÜÃâÌ°¹¦µÄÏÓÒÉ¡£µÚ¶þ£¬ÕâÑùÊ£ÏÂÄÇ20%µÄµØ·½ÎÒ¿ÉÒÔÒýÓúÏ×÷È˵ÄÎÄÕ£¬¸ú¶ÁÕß˵ÄãÃÇÏëÖªµÀʣϵÄϸ½ÚÇëÈ¥¿´xxxÎÄÕ¡£ÕâÑù¸úºÏ×÷ÕßÌá¸ßÀ´ÒýÓá£

2.2. Microstructure characterization
ÕâÀïÖ÷ÒªÊÇÓÃtem,stem,sem¶Ô΢¹Û½á¹¹½øÐбíÕ÷¡£ÎÒÊÇ×öµç¾µµÄ£¬ËùÒÔÎÒÒªÌṩ100£¥µÄϸ½Ú¡£ÕâÀïÎÒ˵һÏÂÄÄЩ¶«Î÷ÊÇ´ó¼ÒÈÝÒ׺öÊӵġ£¸ø´ó¼Ò¿´Ò»ÏÂÎÒµÄÎÄÕÂ
The morphology and structure of different phases and their interfaces was investigated by transmission electron microscopy (TEM) using either a JEOL JEM-2500SE instrument (JEOL Ltd.,Tokyo, Japan) at University of California, Davis (UCD), or a FEI monochromated F20 UT Tecnai scanning transmission electron microscope (FEI Company, Hillsboro, OR) at the National Center for Electron Microscopy (NCEM). Scanning transmission electron microscopy (STEM) was carried out with a Titan G2 80-200 instrument
(FEI Company, Hillsboro, OR) equipped with ChemiSTEM technology and a Fischione high angle annular dark field (HAADF) detector (Fischione, Export, PA) at the FEI Nanoport (Hillsboro, OR). All microscopes were operated at 200 kV.
Ê×ÏÈ£¬Äã¿´ÎÒ°ÑËùÓе羵µÄÐͺŶ¼ÁгöÀ´ÁË£¬Õâ½Ðʲô£¿Õâ¾Í½Ðprofessorional£¬ÈÃeditor¸Ð¾õµ½ÄãÊÇÒ»¸öÄÚÐС£ÕâÑùËûÖÊÒÉÄãµÄtemͼƬµÄʱºò¾ÍÒªÏëÒ»ÏëÁË£¬¿´ÆðÀ´Õâ¸ö×÷Õß±ÈÎÒ¶®temÊDz»ÊÇÎÒÀí½â´íÁËÄØ£¿
Æä´Î£¬µç¾µµÄvoltage£¬ÎÒʵ»°ÊµËµÎÒreview paper¿´µ½±ðÈËÌáÕâ¸ö£¬ÎÒ¶¼»á¾õµÃ×÷ÕߺÜÈÏÕ棬ºÜÐÀÉÍ¡£´ó¼Ò²»ÐÅÈ¥ÕÒÕÒÈÕ±¾È˵Äpaper£¬Äã¿´¿´ÈÕ±¾ÈËÊDz»ÊǶ¼ÁÐvoltage¡£Õâ¾ÍÊÇÓ¡Ïó·Ö£¡

Electron-transparent TEM samples were prepared with either a FEI Versa 3D focused ion beam (FIB) at the FEI Nanoport, or a FEI Scios FIB at UCD. The starting voltage was 30 kV for trenching and initial thinning. The accelerating voltage of the ion beam was then reduced to 5 kV when sample thickness reached approximately 400 nm. Final thinning was performed at 2 kV when the TEM lamellae became electron-transparent. After final thinning, an ion beam energy of 0.5 kV was used to remove most of the remaining amorphous damage layers from the sample surfaces. The final thickness of the TEM samples was approximately 60 nm.
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2.3. Chemical composition characterization

ÕâÒ»¶ÎÖ÷ÒªÊǽøÐвÄÁϳɷֵıíÕ÷£¬edx, eels¡£ºÜ¶àʱºò´ó¼Ò»á°ÑÕâ¸ö¸úÇ°ÃæµÄ·ÅÔÚÒ»Æðд¡£ÎÒËùÓеÄpaper¶¼»á·Ö¿ªÐ´£¬ÒòΪÕâÑù¸üÓÐÂß¼­ÐÔ¡£reviewer¿´ÆðÀ´Êæ·þ£¬±ÈÈçËûºÜ¶®temËû¾Í²»ÐèÒª¿´2.2ÁË¡£»¹ÊÇÄǾ仰reviewÒ²ÊÇÈË£¬Ò»ÌìÒ»¶ÑƨÊÂҪæ¡£Äã¸øËûÐз½±ã£¬Ëû¸ßÐËÁ˾ͻáÉÙÌô´Ì¡£

Elemental distribution maps were acquired using an FEI Super-X windowless EDXS detector (FEI Company, Hillsboro, OR) installed on the Titan G2 80-200 instrument described above. Quantitative EDXS analysis was performed using the standardless technique for which Cliff¨CLorimer coefficients were calculated based on ionization cross-sections and the specific detector geometries [27]. EELS line scans and energy-loss near-edge fine structures (ELNES) were recorded with a Gatan Tridiem parallel electron energy loss spectrometer attached to the aberration corrected JEOL JEM 2100F/Cs scanning transmission electron microscope at UCD, and the monochromated Tecnai F20 UT instrument
at NCEM. The monochromator was set in ¡®¡®unfiltered mode¡¯¡¯, which resulted in an energy resolution of approximately 0.5 eV as measured by the full-width at half maximum of the zero-loss peak.Multivariate statistical analysis (HREM Research Inc., Japan) was used to reduce random noise from as-acquired EELS data using principle component analysis. Acquired spectrum images were decomposed into eigenspectra with assigned eigenvalues. EELS spectra were subsequently reconstructed by using only statistically relevant principal constituents [28,29].
ÔÙÀ´¿´£¬ËùÓÐÓбíÕ÷Óõĵ羵Ðͺţ¬detectorµÄÐͺŶ¼ÓмǼ¡£Õâ¾ÍÊÇ100%µÄÐÅÏ¢£¬ÌṩһÇÐϸ½ÚÈÃreviewer»òÕ߶ÁÕß¿ÉÒÔ100%һ˿²»²îµÄÖظ´ÄãµÄʵÑé¡£Ìṩһ¸öϸ½Ú£¬Êý¾Ý´¦ÀíÈí¼þ¡° EELS spectra were subsequently reconstructed by using only statistically relevant principal constituents[28,29].¡± Õâ¾Í½Ð¸ß¼¶µÄд·¨£¬ÎÒ²»ÌáÈí¼þµÄÃû×ÖÎÒ·ÅÔÚÒýÓÃÀïÁË£¬µ«ÊÇÎÒ¸æËßÄãÎÒÓÃÈí¼þ´¦ÀíÁË£¬¸üÖØÒªµÄÊÂÎÒ¼òÒªµÄ±íÊöÁËÈí¼þµÄ¹¤×÷Ô­Àí£¡Õâ¾ÍÊǼ¼ÇÉ£¬¸æËßreviewerÎҺܶ®Èí¼þÔ­Àí²»ÒªquuestionÎÒµÄÊý¾Ý£¡

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