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Drift Æ¯ÒÆ Drift field Æ¯ÒÆµç³¡ Drift mobility Ç¨ÒÆÂÊ Dry etching ¸É·¨¸¯Ê´ Dry/wet oxidation ¸É/ʪ·¨Ñõ»¯ Dose ¼ÁÁ¿ Duty cycle ¹¤×÷ÖÜÆÚ Dual-in-line package £¨DIP£© Ë«ÁÐÖ±²åʽ·â×° Dynamics ¶¯Ì¬ Dynamic characteristics ¶¯Ì¬ÊôÐÔ Dynamic impedance ¶¯Ì¬×迹 Early effect ¶òÀûЧӦ Early failure ÔçÆÚʧЧ Effective mass ÓÐЧÖÊÁ¿ Einstein relation(ship) °®Òò˹̹¹ØÏµ Electric Erase Programmable Read Only Memory(E2PROM) Ò»´ÎÐÔµç¿É²Á³ýÖ»¶Á´æ´¢Æ÷ Electrode µç¼« Electrominggratim µçÇ¨ÒÆ Electron affinity µç×ÓÇ׺ÍÊÆ Electronic -grade µç×ÓÄÜ Electron-beam photo-resist exposure ¹âÖ¿¹Ê´¼ÁµÄµç×ÓÊøÆØ¹â Electron gas µç×ÓÆø Electron-grade water µç×Ó¼¶´¿Ë® Electron trapping center µç×Ó·ý»ñÖÐÐÄ Electron Volt (eV) µç×Ó·ü Electrostatic ¾²µçµÄ Element ÔªËØ/Ôª¼þ/Åä¼þ Elemental semiconductor ÔªËØ°ëµ¼Ìå Ellipse ÍÖÔ² Ellipsoid ÍÖÇò Emitter ·¢É伫 Emitter-coupled logic ·¢É伫ñîºÏÂß¼Emitter-coupled pair ·¢É伫ñîºÏ¶Ô Emitter follower ÉäËæÆ÷ Empty band ¿Õ´ø Emitter crowding effect ·¢É伫¼¯±ß£¨Óµ¼·£©Ð§Ó¦ Endurance test =life test ÊÙÃü²âÊÔ Energy state ÄÜ̬ Energy momentum diagram ÄÜÁ¿-¶¯Á¿(E-K)ͼ Enhancement mode ÔöÇ¿ÐÍģʽ Enhancement MOS ÔöÇ¿ÐÔMOS Entefic (µÍ)¹²ÈÜµÄ Environmental test »·¾³²âÊÔ Epitaxial ÍâÑ Epitaxial layer ÍâÑÓ²ã Epitaxial slice ÍâÑÓÆ¬ Expitaxy ÍâÑÓ Equivalent curcuit µÈЧµç· Equilibrium majority /minority carriers ƽºâ¶àÊý/ÉÙÊýÔØÁ÷×Ó Erasable Programmable ROM (EPROM)¿É²ëÈ¡£¨±à³Ì£©´æ´¢Æ÷ Error function complement ÓàÎó²îº¯Êý Etch ¿ÌÊ´ Etchant ¿ÌÊ´¼Á Etching mask ¿¹Ê´¼ÁÑÚÄ£ Excess carrier ¹ýÊ£ÔØÁ÷×Ó Excitation energy ¼¤·¢ÄÜ Excited state ¼¤·¢Ì¬ Exciton ¼¤×Ó Extrapolation ÍâÍÆ·¨ Extrinsic ·Ç±¾Õ÷µÄ Extrinsic semiconductor ÔÓÖʰ뵼Ìå Face - centered ÃæÐÄÁ¢·½ Fall time ϽµÊ±¼ä Fan-in ÉÈÈë Fan-out Éȳö Fast recovery ¿ì»Ö¸´ Fast surface states ¿ì½çÃæÌ¬ Feedback ·´À¡ Fermi level ·ÑÃ×Äܼ¶ Fermi-Dirac Distribution ·ÑÃ×-µÒÀ¿Ë·Ö²¼ Femi potential ·ÑÃ×ÊÆ Fick equation ·Æ¿Ë·½³Ì£¨À©É¢£© Field effect transistor ³¡Ð§Ó¦¾§Ìå¹Ü Field oxide ³¡Ñõ»¯²ã Filled band Âú´ø Film ±¡Ä¤ Flash memory ÉÁ˸´æ´¢Æ÷ Flat band ƽ´ø Flat pack ±âƽ·â×° Flicker noise ÉÁ˸£¨±ä£©ÔëÉù Flip-flop toggle ´¥·¢Æ÷·×ª Floating gate ¸¡Õ¤ Fluoride etch ·ú»¯Çâ¿ÌÊ´ Forbidden band ½û´ø Forward bias ÕýÏòÆ«Öà Forward blocking /conductingÕýÏò×è¶Ï/µ¼Í¨ Frequency deviation noiseƵÂÊÆ¯ÒÆÔëÉù Frequency response ƵÂÊÏìÓ¦ Function º¯Êý Gain ÔöÒæ Gallium-Arsenide(GaAs) É黯¼Ø Gamy ray r ÉäÏß Gate ÃÅ¡¢Õ¤¡¢¿ØÖƼ« Gate oxide Õ¤Ñõ»¯²ã Gauss£¨ian£© ¸ß˹ Gaussian distribution profile ¸ß˹²ôÔÓ·Ö²¼Generation-recombination²úÉú-¸´ºÏ Geometries ¼¸ºÎ³ß´ç Germanium(Ge) Õà Graded »º±äµÄ Graded (gradual) channel »º±ä¹µµÀ Graded junction »º±ä½á Grain ¾§Á£ Gradient ÌÝ¶È Grown junction Éú³¤½á Guard ring ±£»¤»· Gummel-Poom model ¸ðı-ÅË Ä£ÐÍ Gunn - effect µÒÊÏЧӦ Hardened device ·øÉä¼Ó¹ÌÆ÷¼þ Heat of formation ÐγÉÈÈ Heat sink É¢ÈÈÆ÷¡¢ÈȳÁ Heavy/light hole band ÖØ/Çá ¿ÕѨ´ø Heavy saturation ÖØ²ôÔÓ Hell - effect »ô¶ûЧӦ Heterojunction ÒìÖʽá Heterojunction structure ÒìÖʽá½á¹¹ Heterojunction Bipolar Transistor£¨HBT£©ÒìÖʽáË«¼«Ð;§Ìå High field property ¸ß³¡ÌØÐÔ High-performance MOS.( H-MOS)¸ßÐÔÄÜMOS. Hormalized ¹éÒ»»¯ Horizontal epitaxial reactor ÎÔʽÍâÑÓ·´Ó¦Æ÷ Hot carrior ÈÈÔØÁ÷×Ó Hybrid integration »ìºÏ¼¯³É Image - force ¾µÏóÁ¦ Impact ionization ÅöײµçÀë Impedance ×迹 Imperfect structure ²»ÍêÕû½á¹¹ Implantation dose ×¢Èë¼ÁÁ¿ Implanted ion ×¢ÈëÀë×Ó Impurity ÔÓÖÊ Impurity scattering ÔÓ־ɢÉä Incremental resistance µç×èÔöÁ¿£¨Î¢·Öµç×裩In-contact mask ½Ó´¥Ê½ÑÚÄ£ Indium tin oxide (ITO) î÷ÎýÑõ»¯Îï Induced channel ¸ÐÓ¦¹µµÀ Inversion ·´ÐÍ Inverter µ¹ÏàÆ÷ Ion Àë×Ó Ion beam Àë×ÓÊø Ion etching Àë×Ó¿ÌÊ´ Ion implantation Àë×Ó×¢Èë Ionization µçÀë Ionization energy µçÀëÄÜ Irradiation ·øÕÕ Isolation land ¸ôÀ뵺 Isotropic ¸÷ÏòͬÐÔ Junction FET(JFET) ½áÐͳ¡Ð§Ó¦¹Ü Junction isolation ½á¸ôÀë Junction spacing ½á¼ä¾à Junction side-wall ½á²à±Ú Latch up ±ÕËø Lateral ºáÏòµÄ Lattice ¾§¸ñ Layout °æÍ¼ Lattice binding/cell/constant/defect/distortion ¾§¸ñ½áºÏÁ¦/¾§°û/¾§¸ñ/¾§¸ñ³£Êì /¾§¸ñȱÏÝ/¾§¸ñ»û±ä Leakage current £¨Ð¹£©Â©µçÁ÷ Level shifting µçÆ½ÒÆ¶¯ Life time ÊÙÃü linearity ÏßÐÔ¶È Linked bond ¹²¼Û¼ü Liquid Nitrogen Òºµª Liquid£phase epitaxial growth technique ÒºÏàÍâÑÓÉú³¤¼¼Êõ Lithography ¹â¿Ì Light Emitting Diode(LED) ·¢¹â¶þ¼«¹Ü Load line or Variable ¸ºÔØÏß Locating and Wiring ²¼¾Ö²¼Ïß Longitudinal ×ÝÏòµÄ Logic swing Âß¼°Ú·ù Lorentz ÂåÂÙ×È Lumped model ¼¯×ÜÄ£ÐÍ Majority carrier ¶àÊýÔØÁ÷×Ó Mask ÑÚĤ°å£¬¹â¿Ì°å Mask level ÑÚÄ£ÐòºÅ Mask set ÑÚÄ£×é Mass - action lawÖÊÁ¿Êغ㶨ÂÉ Master-slave D flip-flopÖ÷´ÓD´¥·¢Æ÷ Matching Æ¥Åä Maxwell Âó¿Ë˹Τ Mean free path ƽ¾ù×ÔÓÉ³Ì Meandered emitter junctionÊá×´·¢É伫½á Mean time before failure (MTBF) ƽ¾ù¹¤×÷ʱ¼ä Megeto - resistance ´Å×è Mesa Ì¨Ãæ MESFET-Metal Semiconductor½ðÊô°ëµ¼ÌåFET Metallization ½ðÊô»¯ Microelectronic technique ΢µç×Ó¼¼Êõ Microelectronics ΢µç×Óѧ Millen indices ÃÜÀÕÖ¸Êý Minority carrier ÉÙÊýÔØÁ÷×Ó Misfit ʧÅä Mismatching ʧÅä Mobile ions ¿É¶¯Àë×Ó Mobility Ç¨ÒÆÂÊ Module Ä£¿é Modulate µ÷ÖÆ Molecular crystal·Ö×Ó¾§Ìå Monolithic IC µ¥Æ¬IC MOSFET½ðÊôÑõ»¯Îï°ëµ¼Ì峡ЧӦ¾§Ìå¹Ü Mos. Transistor(MOST )MOS. ¾§Ìå¹Ü Multiplication ±¶Ôö Modulator µ÷ÖÆ Multi-chip IC ¶àоƬIC Multi-chip module(MCM) ¶àоƬģ¿é Multiplication coefficient±¶ÔöÒò×Ó Naked chip δ·â×°µÄоƬ£¨ÂãÆ¬£© Negative feedback ¸º·´À¡ Negative resistance ¸º×è Nesting Ì×¿Ì Negative-temperature-coefficient ¸ºÎ¶ÈϵÊý Noise margin ÔëÉùÈÝÏÞ Nonequilibrium ·Çƽºâ Nonrolatile ·Ç»Ó·¢£¨Ò×ʧ£©ÐÔ Normally off/on ³£±Õ/¿ª Numerical analysis ÊýÖµ·ÖÎö Occupied band Âú´ø Officienay ¹¦ÂÊ Offset Æ«ÒÆ¡¢Ê§µ÷ On standby ´ýÃü״̬ Ohmic contact Å·Ä·½Ó´¥ Open circuit ¿ªÂ· Operating point ¹¤×÷µã Operating bias ¹¤×÷Æ«Öà Operational amplifier (OPAMP)ÔËËã·Å´óÆ÷ Optical photon =photon ¹â×Ó Optical quenching¹ââ§Ãð Optical transition ¹âԾǨ Optical-coupled isolator¹âñîºÏ¸ôÀëÆ÷ Organic semiconductorÓлú°ëµ¼Ìå Orientation ¾§Ïò¡¢¶¨Ïò Outline ÍâÐÎ Out-of-contact mask·Ç½Ó´¥Ê½ÑÚÄ£ Output characteristic Êä³öÌØÐÔ Output voltage swing Êä³öµçѹ°Ú·ù Overcompensation ¹ý²¹³¥ Over-current protection ¹ýÁ÷±£»¤ Over shoot ¹ý³å Over-voltage protection ¹ýѹ±£»¤ Overlap ½»µü Overload ¹ýÔØ Oscillator Õñµ´Æ÷ Oxide Ñõ»¯Îï Oxidation Ñõ»¯ Oxide passivation Ñõ»¯²ã¶Û»¯ Package ·â×° Pad ѹº¸µã Parameter ²ÎÊý Parasitic effect ¼ÄÉúЧӦ Parasitic oscillation ¼ÄÉúÕñµ´ Passination ¶Û»¯ Passive component ÎÞÔ´Ôª¼þ Passive device ÎÞÔ´Æ÷¼þ Passive surface ¶Û»¯½çÃæ Parasitic transistor ¼ÄÉú¾§Ìå¹Ü Peak-point voltage ·åµãµçѹ Peak voltage ·åÖµµçѹ Permanent-storage circuit ÓÀ¾Ã´æ´¢µç· Period ÖÜÆÚ Periodic table ÖÜÆÚ±í Permeable - base ¿ÉÉøÍ¸»ùÇø Phase-lock loop ËøÏà»· Phase drift ÏàÒÆ Phonon spectra Éù×ÓÆ× Photo conduction ¹âµçµ¼ Photo diode ¹âµç¶þ¼«¹Ü Photoelectric cell ¹âµç³Ø Photoelectric effect ¹âµçЧӦ Photoenic devices ¹â×ÓÆ÷¼þ Photolithographic process ¹â¿Ì¹¤ÒÕ Probe ̽Õë Process ¹¤ÒÕ Propagation delay ´«ÊäÑÓʱ Pseudopotential method âßÊÆ·¢ Punch through ´©Í¨ Pulse triggering/modulating Âö³å´¥·¢/µ÷ÖÆPulse Widen Modulator(PWM) Âö³å¿í¶Èµ÷ÖÆ Punchthrough ´©Í¨ Push-pull stage ÍÆÍì¼¶ Quality factor Æ·ÖÊÒò×Ó Quantization Á¿×Ó»¯ Quantum Á¿×Ó Quantum efficiencyÁ¿×ÓЧӦ Quantum mechanics Á¿×ÓÁ¦Ñ§ Quasi ? Fermi£level×¼·ÑÃ×Äܼ¶ Quartz ʯӢ Radiation conductivity ·øÉäµçµ¼ÂÊ Radiation damage ·øÉäËðÉË Radiation flux density ·øÉäͨÁ¿ÃÜ¶È Radiation hardening ·øÉä¼Ó¹Ì Radiation protection ·øÉä±£»¤ Radiative - recombination·øÕÕ¸´ºÏ Radioactive ·ÅÉäÐÔ Reach through ´©Í¨ Reactive sputtering source ·´Ó¦½¦ÉäÔ´ Read diode ÀïµÂ¶þ¼«¹Ü Recombination ¸´ºÏ Recovery diode »Ö¸´¶þ¼«¹Ü Reciprocal lattice µ¹ºË×Ó Recovery time »Ö¸´Ê±¼ä Rectifier ÕûÁ÷Æ÷£¨¹Ü£© Rectifying contact ÕûÁ÷½Ó´¥ Reference »ù×¼µã »ù×¼ ²Î¿¼µã Refractive index ÕÛÉäÂÊ Register ¼Ä´æÆ÷ Registration ¶Ô×¼ Regulate ¿ØÖÆ µ÷Õû Relaxation lifetime ³Ûԥʱ¼ä Reliability ¿É¿¿ÐÔ Resonance гÕñ Resistance µç×è Resistor µç×èÆ÷ Resistivity µç×èÂÊ Regulator ÎÈѹ¹Ü£¨Æ÷£© Relaxation ³ÛÔ¥ Resonant frequency¹²É䯵ÂÊ Response time ÏìӦʱ¼ä Reverse ·´ÏòµÄ Reverse bias ·´ÏòÆ«Öà Sampling circuit È¡Ñùµç· Sapphire À¶±¦Ê¯£¨Al2O3£© Satellite valley ÎÀÐÇ¹È Saturated current rangeµçÁ÷±¥ºÍÇø Saturation region ±¥ºÍÇø Saturation ±¥ºÍµÄ Scaled down °´±ÈÀýËõС Scattering É¢Éä Schockley diode Ф¿ËÀ³¶þ¼«¹Ü Schottky Ð¤ÌØ»ù Schottky barrier Ð¤ÌØ»ùÊÆÀÝ Schottky contact Ð¤ÌØ»ù½Ó´¥ Schrodingen Ѧ¶¨¶ò Scribing grid »®Æ¬¸ñ Secondary flat ´ÎÆ½Ãæ Stress Ó¦Á¦ Straggle Æ«²î Sublimation Éý»ª Substrate ³Äµ× Substitutional ÌæÎ»Ê½µÄ Superlattice ³¬¾§¸ñ Supply µçÔ´ Surface ±íÃæ Surge capacity ÀËÓ¿ÄÜÁ¦ Subscript ϱê Switching time ¿ª¹ØÊ±¼ä Switch ¿ª¹Ø Transition ԾǨ Transition-metal silica ¹ý¶È½ðÊô¹è»¯Îï Transition probability ԾǨ¼¸ÂÊ Transition region ¹ý¶ÉÇø Transport ÊäÔË Transverse ºáÏòµÄ Trap ÏÝÚå Trapping ·ý»ñ Trapped charge ÏÝÚåµçºÉ Triangle generator Èý½Ç²¨·¢ÉúÆ÷ Triboelectricity Ħ²Áµç Trigger ´¥·¢ Trim µ÷Åä µ÷Õû Triple diffusion ÈýÖØÀ©É¢ Truth table ÕæÖµ±í Tolerahce Èݲî Tunnel(ing) ËíµÀ£¨´©£© Tunnel current ËíµÀµçÁ÷ Turn over תÕÛ Turn - off time ¹Ø¶Ïʱ¼ä Ultraviolet ×ÏÍâµÄ Unijunction µ¥½áµÄ Unipolar µ¥¼«µÄ Unit cell Ô£¨Ôª£©°û Unity-gain frequency µ¥Î»Ôö񾮵ÂÊ Unilateral-switchµ¥Ïò¿ª¹Ø Vacancy ¿Õλ Vacuum Õæ¿Õ Valence(value) band ¼Û´ø Value band edge ¼Û´ø¶¥ Valence bond ¼Û¼ü Vapour phase ÆûÏà Varactor ±äÈÝ¹Ü Varistor ±ä×èÆ÷ Vibration Õñ¶¯ Voltage µçѹ Wafer ¾§Æ¬ Wave equation ²¨¶¯·½³Ì Wave guide ²¨µ¼ Wave number ²¨Êý Wave-particle duality ²¨Á£¶þÏàÐÔ Wear-out ÉÕ»Ù Wire routing ²¼Ïß Work function ¹¦º¯Êý Worst-case device ×Çé¿öÆ÷¼þ Yield ³ÉÆ·ÂÊ Zener breakdown ÆëÄÉ»÷´© Zone melting ÇøÈÛ·¨ |
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