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Abrupt junction Í»±ä½á Accelerated testing ¼ÓËÙʵÑé
Acceptor ÊÜÖ÷ Acceptor atom ÊÜÖ÷Ô­×Ó
Accumulation »ýÀÛ¡¢¶Ñ»ý Accumulating contact »ýÀÛ½Ó´¥
Accumulation region »ýÀÛÇø Accumulation layer »ýÀÛ²ã
Active region ÓÐÔ´Çø Active component ÓÐÔ´Ôª
Active device ÓÐÔ´Æ÷¼þ Activation ¼¤»î
Activation energy ¼¤»îÄÜ Active region ÓÐÔ´£¨·Å´ó£©Çø
Admittance µ¼ÄÉ Allowed band ÔÊ´ø
Alloy-junction deviceºÏ½ð½áÆ÷¼þ Aluminum(Aluminium) ÂÁ
Aluminum ? oxide ÂÁÑõ»¯Îï Aluminum passivation ÂÁ¶Û»¯
Ambipolar Ë«¼«µÄ Ambient temperature »·¾³Î¶È
Amorphous ÎÞ¶¨Ðεģ¬·Ç¾§ÌåµÄ Amplifier ¹¦·Å À©ÒôÆ÷ ·Å´óÆ÷
Analogue(Analog) comparator Ä£Äâ±È½ÏÆ÷ Angstrom °£
Anneal ÍË»ð Anisotropic ¸÷ÏòÒìÐÔµÄ
Anode Ñô¼« Arsenic (AS) Éé
Auger ¶íЪ Auger process ¶íЪ¹ý³Ì
Avalanche Ñ©±À Avalanche breakdown Ñ©±À»÷´©
Avalanche excitationÑ©±À¼¤·¢

Background carrier ±¾µ×ÔØÁ÷×Ó Background doping ±¾µ×²ôÔÓ
Backward ·´Ïò Backward bias ·´ÏòÆ«ÖÃ
Ballasting resistor ÕûÁ÷µç×è Ball bond ÇòÐμüºÏ
Band ÄÜ´ø Band gap ÄÜ´ø¼ä϶
Barrier ÊÆÀÝ Barrier layer ÊÆÀݲã
Barrier width ÊÆÀÝ¿í¶È Base »ù¼«
Base contact »ùÇø½Ó´¥ Base stretching »ùÇøÀ©Õ¹Ð§Ó¦
Base transit time »ùÇø¶ÉԽʱ¼ä Base transport efficiency»ùÇøÊäÔËϵÊý
Base-width modulation»ùÇø¿í¶Èµ÷ÖÆ Basis vector »ùʸ
Bias Æ«Öà Bilateral switch Ë«Ïò¿ª¹Ø
Binary code ¶þ½øÖÆ´úÂëBinary compound semiconductor ¶þÔª»¯ºÏÎï°ëµ¼Ìå
Bipolar Ë«¼«Ð﵀ Bipolar Junction Transistor (BJT)Ë«¼«¾§Ìå¹Ü
Bloch ²¼ÂåºÕ Blocking band ×èµ²ÄÜ´ø
Blocking contact ×èµ²½Ó´¥ Body - centered ÌåÐÄÁ¢·½
Body-centred cubic structure ÌåÁ¢ÐĽṹ Boltzmann ²¨¶û×ÈÂü
Bond ¼ü¡¢¼üºÏ Bonding electron ¼Ûµç×Ó
Bonding pad ¼üºÏµã Bootstrap circuit ×Ô¾Ùµç·
Bootstrapped emitter follower ×Ô¾ÙÉ伫¸úËæÆ÷Boron Åð
Borosilicate glass Åð¹è²£Á§ Boundary condition ±ß½çÌõ¼þ
Bound electron Êø¸¿µç×Ó Breadboard Ä£Äâ°å¡¢ÊµÑé°å
Break down »÷´© Break over תÕÛ
Brillouin ²¼ÀïÔ¨ Brillouin zone ²¼ÀïÔ¨Çø
Built-in ÄÚ½¨µÄ Build-in electric field ÄÚ½¨µç³¡
Bulk Ìå/ÌåÄÚ Bulk absorption ÌåÎüÊÕ
Bulk generation Ìå²úÉú Bulk recombination Ì帴ºÏ
Burn - in ÀÏ»¯ Burn out ÉÕ»Ù
Buried channel Âñ¹µ Buried diffusion region ÒþÂñÀ©É¢Çø

Can Íâ¿Ç Capacitance µçÈÝ
Capture cross section ·ý»ñ½ØÃæ Capture carrier ·ý»ñÔØÁ÷×Ó
Carrier ÔØÁ÷×Ó¡¢Ôز¨ Carry bit ½øÎ»Î»
Carry-in bit ½øÎ»ÊäÈë Carry-out bit ½øÎ»Êä³ö
Cascade ¼¶Áª Case ¹Ü¿Ç
Cathode Òõ¼« Center ÖÐÐÄ
Ceramic ÌÕ´É£¨µÄ£© Channel ¹µµÀ
Channel breakdown ¹µµÀ»÷´© Channel current ¹µµÀµçÁ÷
Channel doping ¹µµÀ²ôÔÓ Channel shortening ¹µµÀËõ¶Ì
Channel width ¹µµÀ¿í¶È Characteristic impedance ÌØÕ÷×迹
Charge µçºÉ¡¢³äµç Charge-compensation effects µçºÉ²¹³¥Ð§Ó¦
Charge conservation µçºÉÊØºã Charge neutrality condition µçÖÐÐÔÌõ¼þ
Charge drive/exchange/sharing/transfer/storage µçºÉÇý¶¯/½»»»/¹²Ïí/×ªÒÆ/´æ´¢
Chemmical etching »¯Ñ§¸¯Ê´·¨ Chemically-Polish »¯Ñ§Å×¹â
Chemmically-Mechanically Polish (CMP) »¯Ñ§»úеÅ×¹â Chip оƬ
Chip yield оƬ³ÉÆ·ÂÊ Clamped óéλ
Clamping diode óéλ¶þ¼«¹Ü Cleavage plane ½âÀíÃæ
Clock rate ʱÖÓÆµÂÊ Clock generator ʱÖÓ·¢ÉúÆ÷
Clock flip-flop ʱÖÓ´¥·¢Æ÷ Close-packed structure Ãܶѻý½á¹¹
Close-loop gain ±Õ»·ÔöÒæ Collector ¼¯µç¼«
Collision Åöײ Compensated OP-AMP ²¹³¥ÔË·Å
Common-base/collector/emitter connection ¹²»ù¼«/¼¯µç¼«/·¢É伫Á¬½Ó
Common-gate/drain/source connection ¹²Õ¤/©/Ô´Á¬½Ó
Common-mode gain ¹²Ä£ÔöÒæ Common-mode input ¹²Ä£ÊäÈë
Common-mode rejection ratio (CMRR) ¹²Ä£ÒÖÖÆ±È
Compatibility ¼æÈÝÐÔ Compensation ²¹³¥
Compensated impurities ²¹³¥ÔÓÖÊ Compensated semiconductor ²¹³¥°ëµ¼Ìå
Complementary Darlington circuit »¥²¹´ïÁÖ¶Ùµç·
Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS)
»¥²¹½ðÊôÑõ»¯Îï°ëµ¼Ì峡ЧӦ¾§Ìå¹Ü
Complementary error function ÓàÎó²îº¯Êý
Czochralshicrystal Ö±Á¢µ¥¾§
Czochralski technique ÇпËÀÍ˹»ù¼¼Êõ£¨Cz·¨Ö±À­¾§ÌåJ£©

Dangling bonds Ðü¹Ò¼ü Dark current °µµçÁ÷
Dead time ¿ÕÔØÊ±¼ä Debye length µÂ°Ý³¤¶È
De.broglie µÂ²¼ÂåÒâ Decderate ¼õËÙ
Decibel (dB) ·Ö±´ Decode ÒëÂë
Deep acceptor level ÉîÊÜÖ÷Äܼ¶ Deep donor level ÉîÊ©Ö÷Äܼ¶
Deep impurity level Éî¶ÈÔÓÖÊÄܼ¶ Deep trap ÉîÏÝÚå
Defeat ȱÏÝ
Diffusion constant À©É¢³£Êý Diffusivity À©É¢ÂÊ
Diffusion capacitance/barrier/current/furnace À©É¢µçÈÝ/ÊÆÀÝ/µçÁ÷/¯
Digital circuit Êý×Öµç· Dipole domain ż¼«³ë
Dipole layer ż¼«²ã Direct-coupling Ö±½ÓñîºÏ
Direct-gap semiconductor Ö±½Ó´øÏ¶°ëµ¼Ìå Direct transition Ö±½ÓԾǨ
Discharge ·Åµç Discrete component ·ÖÁ¢Ôª¼þ
Dissipation ºÄÉ¢ Distribution ·Ö²¼
Distributed capacitance ·Ö²¼µçÈÝ Distributed model ·Ö²¼Ä£ÐÍ
Displacement Î»ÒÆ Dislocation λ´í
Domain ³ë Donor Ê©Ö÷
Donor exhaustion Ê©Ö÷ºÄ¾¡ Dopant ²ôÔÓ¼Á
Doped semiconductor ²ôÔÓ°ëµ¼Ìå Doping concentration ²ôÔÓŨ¶È
Double-diffusive MOS(DMOS)Ë«À©É¢MOS.
Drift Æ¯ÒÆ Drift field Æ¯ÒÆµç³¡
Drift mobility Ç¨ÒÆÂÊ Dry etching ¸É·¨¸¯Ê´
Dry/wet oxidation ¸É/ʪ·¨Ñõ»¯ Dose ¼ÁÁ¿
Duty cycle ¹¤×÷ÖÜÆÚ Dual-in-line package £¨DIP£© Ë«ÁÐÖ±²åʽ·â×°
Dynamics ¶¯Ì¬ Dynamic characteristics ¶¯Ì¬ÊôÐÔ
Dynamic impedance ¶¯Ì¬×迹

Early effect ¶òÀûЧӦ Early failure ÔçÆÚʧЧ
Effective mass ÓÐЧÖÊÁ¿ Einstein relation(ship) °®Òò˹̹¹ØÏµ
Electric Erase Programmable Read Only Memory(E2PROM)
Ò»´ÎÐÔµç¿É²Á³ýÖ»¶Á´æ´¢Æ÷
Electrode µç¼« Electrominggratim µçÇ¨ÒÆ
Electron affinity µç×ÓÇ׺ÍÊÆ Electronic -grade µç×ÓÄÜ
Electron-beam photo-resist exposure ¹âÖ¿¹Ê´¼ÁµÄµç×ÓÊøÆØ¹â
Electron gas µç×ÓÆø Electron-grade water µç×Ó¼¶´¿Ë®
Electron trapping center µç×Ó·ý»ñÖÐÐÄ Electron Volt (eV) µç×Ó·ü
Electrostatic ¾²µçµÄ Element ÔªËØ/Ôª¼þ/Åä¼þ
Elemental semiconductor ÔªËØ°ëµ¼Ìå Ellipse ÍÖÔ²
Ellipsoid ÍÖÇò Emitter ·¢É伫
Emitter-coupled logic ·¢É伫ñîºÏÂß¼­Emitter-coupled pair ·¢É伫ñîºÏ¶Ô
Emitter follower ÉäËæÆ÷ Empty band ¿Õ´ø
Emitter crowding effect ·¢É伫¼¯±ß£¨Óµ¼·£©Ð§Ó¦
Endurance test =life test ÊÙÃü²âÊÔ Energy state ÄÜ̬
Energy momentum diagram ÄÜÁ¿-¶¯Á¿(E-K)ͼ Enhancement mode
ÔöÇ¿ÐÍģʽ
Enhancement MOS ÔöÇ¿ÐÔMOS Entefic (µÍ)¹²ÈܵÄ
Environmental test »·¾³²âÊÔ Epitaxial ÍâÑÓµÄ
Epitaxial layer ÍâÑÓ²ã Epitaxial slice ÍâÑÓÆ¬
Expitaxy ÍâÑÓ Equivalent curcuit µÈЧµç·
Equilibrium majority /minority carriers ƽºâ¶àÊý/ÉÙÊýÔØÁ÷×Ó
Erasable Programmable ROM (EPROM)¿É²ëÈ¡£¨±à³Ì£©´æ´¢Æ÷
Error function complement ÓàÎó²îº¯Êý
Etch ¿ÌÊ´ Etchant ¿ÌÊ´¼Á
Etching mask ¿¹Ê´¼ÁÑÚÄ£ Excess carrier ¹ýÊ£ÔØÁ÷×Ó
Excitation energy ¼¤·¢ÄÜ Excited state ¼¤·¢Ì¬
Exciton ¼¤×Ó Extrapolation ÍâÍÆ·¨
Extrinsic ·Ç±¾Õ÷µÄ Extrinsic semiconductor ÔÓÖʰ뵼Ìå

Face - centered ÃæÐÄÁ¢·½ Fall time ϽµÊ±¼ä
Fan-in ÉÈÈë Fan-out Éȳö
Fast recovery ¿ì»Ö¸´ Fast surface states ¿ì½çÃæÌ¬
Feedback ·´À¡ Fermi level ·ÑÃ×Äܼ¶
Fermi-Dirac Distribution ·ÑÃ×-µÒÀ­¿Ë·Ö²¼ Femi potential ·ÑÃ×ÊÆ
Fick equation ·Æ¿Ë·½³Ì£¨À©É¢£© Field effect transistor ³¡Ð§Ó¦¾§Ìå¹Ü
Field oxide ³¡Ñõ»¯²ã Filled band Âú´ø
Film ±¡Ä¤ Flash memory ÉÁ˸´æ´¢Æ÷
Flat band ƽ´ø Flat pack ±âƽ·â×°
Flicker noise ÉÁ˸£¨±ä£©ÔëÉù Flip-flop toggle ´¥·¢Æ÷·­×ª
Floating gate ¸¡Õ¤ Fluoride etch ·ú»¯Çâ¿ÌÊ´
Forbidden band ½û´ø Forward bias ÕýÏòÆ«ÖÃ
Forward blocking /conductingÕýÏò×è¶Ï/µ¼Í¨
Frequency deviation noiseƵÂÊÆ¯ÒÆÔëÉù
Frequency response ƵÂÊÏìÓ¦ Function º¯Êý

Gain ÔöÒæ Gallium-Arsenide(GaAs) É黯¼Ø
Gamy ray r ÉäÏß Gate ÃÅ¡¢Õ¤¡¢¿ØÖƼ«
Gate oxide Õ¤Ñõ»¯²ã Gauss£¨ian£© ¸ß˹
Gaussian distribution profile ¸ß˹²ôÔÓ·Ö²¼Generation-recombination²úÉú-¸´ºÏ
Geometries ¼¸ºÎ³ß´ç Germanium(Ge) Õà
Graded »º±äµÄ Graded (gradual) channel »º±ä¹µµÀ
Graded junction »º±ä½á Grain ¾§Á£
Gradient ÌÝ¶È Grown junction Éú³¤½á
Guard ring ±£»¤»· Gummel-Poom model ¸ðı-ÅË Ä£ÐÍ
Gunn - effect µÒÊÏЧӦ

Hardened device ·øÉä¼Ó¹ÌÆ÷¼þ Heat of formation ÐγÉÈÈ
Heat sink É¢ÈÈÆ÷¡¢ÈȳÁ Heavy/light hole band ÖØ/Çá ¿ÕѨ´ø
Heavy saturation ÖØ²ôÔÓ Hell - effect »ô¶ûЧӦ
Heterojunction ÒìÖʽá Heterojunction structure ÒìÖʽá½á¹¹
Heterojunction Bipolar Transistor£¨HBT£©ÒìÖʽáË«¼«Ð;§Ìå
High field property ¸ß³¡ÌØÐÔ
High-performance MOS.( H-MOS)¸ßÐÔÄÜMOS. Hormalized ¹éÒ»»¯
Horizontal epitaxial reactor ÎÔʽÍâÑÓ·´Ó¦Æ÷ Hot carrior ÈÈÔØÁ÷×Ó
Hybrid integration »ìºÏ¼¯³É

Image - force ¾µÏóÁ¦ Impact ionization ÅöײµçÀë
Impedance ×迹 Imperfect structure ²»ÍêÕû½á¹¹
Implantation dose ×¢Èë¼ÁÁ¿ Implanted ion ×¢ÈëÀë×Ó
Impurity ÔÓÖÊ Impurity scattering ÔÓ־ɢÉä
Incremental resistance µç×èÔöÁ¿£¨Î¢·Öµç×裩In-contact mask ½Ó´¥Ê½ÑÚÄ£
Indium tin oxide (ITO) î÷ÎýÑõ»¯Îï Induced channel ¸ÐÓ¦¹µµÀ
Inversion ·´ÐÍ Inverter µ¹ÏàÆ÷
Ion Àë×Ó Ion beam Àë×ÓÊø
Ion etching Àë×Ó¿ÌÊ´ Ion implantation Àë×Ó×¢Èë
Ionization µçÀë Ionization energy µçÀëÄÜ
Irradiation ·øÕÕ Isolation land ¸ôÀ뵺
Isotropic ¸÷ÏòͬÐÔ

Junction FET(JFET) ½áÐͳ¡Ð§Ó¦¹Ü Junction isolation ½á¸ôÀë
Junction spacing ½á¼ä¾à Junction side-wall ½á²à±Ú

Latch up ±ÕËø Lateral ºáÏòµÄ
Lattice ¾§¸ñ Layout °æÍ¼
Lattice binding/cell/constant/defect/distortion
¾§¸ñ½áºÏÁ¦/¾§°û/¾§¸ñ/¾§¸ñ³£Êì /¾§¸ñȱÏÝ/¾§¸ñ»û±ä
Leakage current £¨Ð¹£©Â©µçÁ÷ Level shifting µçÆ½ÒÆ¶¯
Life time ÊÙÃü linearity ÏßÐÔ¶È
Linked bond ¹²¼Û¼ü Liquid Nitrogen Òºµª
Liquid£­phase epitaxial growth technique ÒºÏàÍâÑÓÉú³¤¼¼Êõ
Lithography ¹â¿Ì Light Emitting Diode(LED) ·¢¹â¶þ¼«¹Ü
Load line or Variable ¸ºÔØÏß Locating and Wiring ²¼¾Ö²¼Ïß
Longitudinal ×ÝÏòµÄ Logic swing Âß¼­°Ú·ù
Lorentz ÂåÂÙ×È Lumped model ¼¯×ÜÄ£ÐÍ

Majority carrier ¶àÊýÔØÁ÷×Ó Mask ÑÚĤ°å£¬¹â¿Ì°å
Mask level ÑÚÄ£ÐòºÅ Mask set ÑÚÄ£×é
Mass - action lawÖÊÁ¿Êغ㶨ÂÉ Master-slave D flip-flopÖ÷´ÓD´¥·¢Æ÷
Matching Æ¥Åä Maxwell Âó¿Ë˹Τ
Mean free path ƽ¾ù×ÔÓÉ³Ì Meandered emitter junctionÊá×´·¢É伫½á
Mean time before failure (MTBF) ƽ¾ù¹¤×÷ʱ¼ä
Megeto - resistance ´Å×è Mesa Ì¨Ãæ
MESFET-Metal Semiconductor½ðÊô°ëµ¼ÌåFET
Metallization ½ðÊô»¯ Microelectronic technique ΢µç×Ó¼¼Êõ
Microelectronics ΢µç×Óѧ Millen indices ÃÜÀÕÖ¸Êý
Minority carrier ÉÙÊýÔØÁ÷×Ó Misfit ʧÅä
Mismatching ʧÅä Mobile ions ¿É¶¯Àë×Ó
Mobility Ç¨ÒÆÂÊ Module Ä£¿é
Modulate µ÷ÖÆ Molecular crystal·Ö×Ó¾§Ìå
Monolithic IC µ¥Æ¬IC MOSFET½ðÊôÑõ»¯Îï°ëµ¼Ì峡ЧӦ¾§Ìå¹Ü
Mos. Transistor(MOST )MOS. ¾§Ìå¹Ü Multiplication ±¶Ôö
Modulator µ÷ÖÆ Multi-chip IC ¶àоƬIC
Multi-chip module(MCM) ¶àоƬģ¿é Multiplication coefficient±¶ÔöÒò×Ó

Naked chip δ·â×°µÄоƬ£¨ÂãÆ¬£© Negative feedback ¸º·´À¡
Negative resistance ¸º×è Nesting Ì׿Ì
Negative-temperature-coefficient ¸ºÎ¶ÈϵÊý Noise margin ÔëÉùÈÝÏÞ
Nonequilibrium ·Çƽºâ Nonrolatile ·Ç»Ó·¢£¨Ò×ʧ£©ÐÔ
Normally off/on ³£±Õ/¿ª Numerical analysis ÊýÖµ·ÖÎö

Occupied band Âú´ø Officienay ¹¦ÂÊ
Offset Æ«ÒÆ¡¢Ê§µ÷ On standby ´ýÃü״̬
Ohmic contact Å·Ä·½Ó´¥ Open circuit ¿ªÂ·
Operating point ¹¤×÷µã Operating bias ¹¤×÷Æ«ÖÃ
Operational amplifier (OPAMP)ÔËËã·Å´óÆ÷
Optical photon =photon ¹â×Ó Optical quenching¹ââ§Ãð
Optical transition ¹âԾǨ Optical-coupled isolator¹âñîºÏ¸ôÀëÆ÷
Organic semiconductorÓлú°ëµ¼Ìå Orientation ¾§Ïò¡¢¶¨Ïò
Outline ÍâÐÎ Out-of-contact mask·Ç½Ó´¥Ê½ÑÚÄ£
Output characteristic Êä³öÌØÐÔ Output voltage swing Êä³öµçѹ°Ú·ù
Overcompensation ¹ý²¹³¥ Over-current protection ¹ýÁ÷±£»¤
Over shoot ¹ý³å Over-voltage protection ¹ýѹ±£»¤
Overlap ½»µü Overload ¹ýÔØ
Oscillator Õñµ´Æ÷ Oxide Ñõ»¯Îï
Oxidation Ñõ»¯ Oxide passivation Ñõ»¯²ã¶Û»¯

Package ·â×° Pad ѹº¸µã
Parameter ²ÎÊý Parasitic effect ¼ÄÉúЧӦ
Parasitic oscillation ¼ÄÉúÕñµ´ Passination ¶Û»¯
Passive component ÎÞÔ´Ôª¼þ Passive device ÎÞÔ´Æ÷¼þ
Passive surface ¶Û»¯½çÃæ Parasitic transistor ¼ÄÉú¾§Ìå¹Ü
Peak-point voltage ·åµãµçѹ Peak voltage ·åÖµµçѹ
Permanent-storage circuit ÓÀ¾Ã´æ´¢µç· Period ÖÜÆÚ
Periodic table ÖÜÆÚ±í Permeable - base ¿ÉÉøÍ¸»ùÇø
Phase-lock loop ËøÏà»· Phase drift ÏàÒÆ
Phonon spectra Éù×ÓÆ×
Photo conduction ¹âµçµ¼ Photo diode ¹âµç¶þ¼«¹Ü
Photoelectric cell ¹âµç³Ø
Photoelectric effect ¹âµçЧӦ
Photoenic devices ¹â×ÓÆ÷¼þ Photolithographic process ¹â¿Ì¹¤ÒÕ
Probe ̽Õë Process ¹¤ÒÕ
Propagation delay ´«ÊäÑÓʱ Pseudopotential method âßÊÆ·¢
Punch through ´©Í¨ Pulse triggering/modulating Âö³å´¥·¢/µ÷ÖÆPulse

Widen Modulator(PWM) Âö³å¿í¶Èµ÷ÖÆ
Punchthrough ´©Í¨ Push-pull stage ÍÆÍì¼¶

Quality factor Æ·ÖÊÒò×Ó Quantization Á¿×Ó»¯
Quantum Á¿×Ó Quantum efficiencyÁ¿×ÓЧӦ
Quantum mechanics Á¿×ÓÁ¦Ñ§ Quasi ? Fermi£­level×¼·ÑÃ×Äܼ¶
Quartz ʯӢ

Radiation conductivity ·øÉäµçµ¼ÂÊ Radiation damage ·øÉäËðÉË
Radiation flux density ·øÉäͨÁ¿ÃÜ¶È Radiation hardening ·øÉä¼Ó¹Ì
Radiation protection ·øÉä±£»¤ Radiative - recombination·øÕÕ¸´ºÏ
Radioactive ·ÅÉäÐÔ Reach through ´©Í¨
Reactive sputtering source ·´Ó¦½¦ÉäÔ´ Read diode ÀïµÂ¶þ¼«¹Ü
Recombination ¸´ºÏ Recovery diode »Ö¸´¶þ¼«¹Ü
Reciprocal lattice µ¹ºË×Ó Recovery time »Ö¸´Ê±¼ä
Rectifier ÕûÁ÷Æ÷£¨¹Ü£© Rectifying contact ÕûÁ÷½Ó´¥
Reference »ù×¼µã »ù×¼ ²Î¿¼µã Refractive index ÕÛÉäÂÊ
Register ¼Ä´æÆ÷ Registration ¶Ô×¼
Regulate ¿ØÖÆ µ÷Õû Relaxation lifetime ³Ûԥʱ¼ä
Reliability ¿É¿¿ÐÔ Resonance гÕñ
Resistance µç×è Resistor µç×èÆ÷
Resistivity µç×èÂÊ Regulator ÎÈѹ¹Ü£¨Æ÷£©
Relaxation ³ÛÔ¥ Resonant frequency¹²É䯵ÂÊ
Response time ÏìӦʱ¼ä Reverse ·´ÏòµÄ
Reverse bias ·´ÏòÆ«ÖÃ

Sampling circuit È¡Ñùµç· Sapphire À¶±¦Ê¯£¨Al2O3£©
Satellite valley ÎÀÐÇ¹È Saturated current rangeµçÁ÷±¥ºÍÇø
Saturation region ±¥ºÍÇø Saturation ±¥ºÍµÄ
Scaled down °´±ÈÀýËõС Scattering É¢Éä
Schockley diode Ф¿ËÀ³¶þ¼«¹Ü Schottky Ð¤ÌØ»ù
Schottky barrier Ð¤ÌØ»ùÊÆÀÝ Schottky contact Ð¤ÌØ»ù½Ó´¥
Schrodingen Ѧ¶¨¶ò Scribing grid »®Æ¬¸ñ
Secondary flat ´ÎÆ½Ãæ
Stress Ó¦Á¦ Straggle Æ«²î
Sublimation Éý»ª Substrate ³Äµ×
Substitutional ÌæÎ»Ê½µÄ Superlattice ³¬¾§¸ñ
Supply µçÔ´ Surface ±íÃæ
Surge capacity ÀËÓ¿ÄÜÁ¦ Subscript ϱê
Switching time ¿ª¹ØÊ±¼ä Switch ¿ª¹Ø

Transition ԾǨ Transition-metal silica ¹ý¶È½ðÊô¹è»¯Îï
Transition probability ԾǨ¼¸ÂÊ Transition region ¹ý¶ÉÇø
Transport ÊäÔË Transverse ºáÏòµÄ
Trap ÏÝÚå Trapping ·ý»ñ
Trapped charge ÏÝÚåµçºÉ Triangle generator Èý½Ç²¨·¢ÉúÆ÷
Triboelectricity Ħ²Áµç Trigger ´¥·¢
Trim µ÷Åä µ÷Õû Triple diffusion ÈýÖØÀ©É¢
Truth table ÕæÖµ±í Tolerahce Èݲî
Tunnel(ing) ËíµÀ£¨´©£© Tunnel current ËíµÀµçÁ÷
Turn over תÕÛ Turn - off time ¹Ø¶Ïʱ¼ä

Ultraviolet ×ÏÍâµÄ Unijunction µ¥½áµÄ
Unipolar µ¥¼«µÄ Unit cell Ô­£¨Ôª£©°û
Unity-gain frequency µ¥Î»Ôö񾮵ÂÊ Unilateral-switchµ¥Ïò¿ª¹Ø

Vacancy ¿Õλ Vacuum Õæ¿Õ
Valence(value) band ¼Û´ø Value band edge ¼Û´ø¶¥
Valence bond ¼Û¼ü Vapour phase ÆûÏà
Varactor ±äÈÝ¹Ü Varistor ±ä×èÆ÷
Vibration Õñ¶¯ Voltage µçѹ

Wafer ¾§Æ¬ Wave equation ²¨¶¯·½³Ì
Wave guide ²¨µ¼ Wave number ²¨Êý
Wave-particle duality ²¨Á£¶þÏàÐÔ Wear-out ÉÕ»Ù
Wire routing ²¼Ïß Work function ¹¦º¯Êý

Worst-case device ×Çé¿öÆ÷¼þ

Yield ³ÉÆ·ÂÊ

Zener breakdown ÆëÄÉ»÷´©
Zone melting ÇøÈÛ·¨
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