| ²é¿´: 225 | »Ø¸´: 2 | ||
| ¡¾½±Àø¡¿ ±¾Ìû±»ÆÀ¼Û2´Î£¬×÷ÕßS071240Ôö¼Ó½ð±Ò 1.5 ¸ö | ||
| µ±Ç°Ö÷ÌâÒѾ´æµµ¡£ | ||
[×ÊÔ´]
¡¾·ÖÏí¡¿Ò»Æª´óÅ£µÄÂÛÎÄ=ÄÉÃ×¹¦ÄܲÄÁÏ=ÔÓÖ¾£ºPro.Mater.Sci.
|
||
|
Accommodation processes in nanostructured functional materials author: G. Thomas Department of Materials Science and Engineering, 561 Evans Hall, University of California, Berkeley, CA 94720-1760, USA Abstract In the processing of materials, notably for nanostructures for functional properties, processing induces strains resulting in accommodation by mechanical relaxation processes (elastic, plastic, transformations, fracture) which modify the properties. Examples are given here for magnetic thin films (media, heads) and diffusion-induced defects in doped silicon, with emphasis on their microstructures using transmission electron microscopy (TEM). The characterization of these materials and their mechanical properties are essential if their functional properties are to be understood and optimized. Îļþ´óС£º920kb http://www.namipan.com/d/0.pdf/45421fe4af49aa6a0f7a9c1381cbf742d7d3c418c15e0e00 |
» ²ÂÄãϲ»¶
»¯Ñ§¹¤³ÌÓë¼¼Êõ324µ÷¼Á
ÒѾÓÐ16È˻ظ´
298Çóµ÷¼Á
ÒѾÓÐ4È˻ظ´
282£¬Çóµ÷¼Á
ÒѾÓÐ9È˻ظ´
¿¼Ñе÷¼Á
ÒѾÓÐ19È˻ظ´
308Çóµ÷¼Á
ÒѾÓÐ20È˻ظ´
ÖпÆÔº×Ü·Ö315Çóµ÷¼Á
ÒѾÓÐ3È˻ظ´
Çóµ÷¼Á ²ÄÁÏÓ빤³Ì 324·Ö ר˶
ÒѾÓÐ3È˻ظ´
Ò»Ö¾Ô¸¿ó´ó£¬²ÄÁϹ¤³Ìר˶314·Ö£¬0856¿Éµ÷¶¼¿ÉÒÔ
ÒѾÓÐ12È˻ظ´
»·Ñõ¹à·â½º ¿¹³Á¼Á
ÒѾÓÐ4È˻ظ´
268·Ö085602»¯Ñ§¹¤³Ìµ÷¼Á
ÒѾÓÐ22È˻ظ´
» ±¾Ö÷ÌâÏà¹ØÉ̼ÒÍÆ¼ö: (ÎÒÒ²ÒªÔÚÕâÀïÍÆ¹ã)
2Â¥2009-01-06 11:04:58
¼òµ¥»Ø¸´
suiyuan993Â¥
2009-01-06 20:27
»Ø¸´
















»Ø¸´´ËÂ¥
