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[求助]
silvaco tcad如何定义新的光刻胶 已有1人参与
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silvaco tcad中如何定义新的光刻胶进行光刻仿真？ 发自小木虫Android客户端 |
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2楼2017-04-05 21:48:05
3楼2017-09-01 14:50:11
【答案】应助回帖
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自带例子中光刻文件夹内第13个讲了怎么定义新光刻胶 # Define exposure parameters for the Dill exposure model and development # rate parameters for the Kim development rate model for the photoresists # AAA and BBB. # rate.develop name.resist=AAA i.line\ r1.kim = 0.085329 r2.kim = 0.000002 r3.kim = 11.74276 \ r4.kim = 0.0 r5.kim = 0.0 r6.kim = 0.0 r7.kim = 0.0 \ r8.kim = 0.0 r9.kim = 0.0 r10.kim = 0.0 \ a.dill = 0.73 b.dill = 0.07 c.dill = 0.018 \ Dix.0 = 7.55e-13 Dix.E = 3.34e-2 rate.develop name.resist=BBB i.line\ r1.kim = 0.085329 r2.kim = 0.000002 r3.kim = 11.74276 \ r4.kim = 0.0 r5.kim = 0.0 r6.kim = 0.0 r7.kim = 0.0 \ r8.kim = 0.0 r9.kim = 0.0 r10.kim = 0.0 \ a.dill = 0.73 b.dill = 0.07 c.dill = 0.018 \ Dix.0 = 7.55e-13 Dix.E = 3.34e-2 # # Define index of refraction of user defined photoresists AAA and BBB. # optical photo name.resist=AAA lambda=0.365 refrac.real=1.6 refrac.imag=0.02 optical photo name.resist=BBB lambda=0.365 refrac.real=1.9 refrac.imag=0.01 # # Deposit user defined photoresists AAA and BBB # deposit photoresist name.resist=AAA thick=.5 divisions=20 deposit photoresist name.resist=BBB thick=.5 divisions=20 # structure mirror left # structure outfile=anopex13_0.str |
4楼2021-04-08 09:06:57
5楼2023-05-29 02:19:29
