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dingjiajian新虫 (小有名气)
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[求助]
英翻汉
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To improve the adhesion of SU-8 films, we prepared siliconwafers (4" diameter;Wafernet Inc., San Jose, CA) by cleaningin a piranha solution (sulphuric acid:hydrogen peroxide, 3:1;caution—this solution can explode when mixed with organics),and then dehydrating the wafers on a hot plate at 200 ◦C forat least 20 min immediately prior to use. For films thinnerthan～200μm, we typically used SU-8 (50) (MicrolithographyChemical Corpor-ation, Newton, MA). Spin-coating the resistat 500 rpm for 15 s, followed by 3000 rpm for 15 s produced afilm approximately 50μmthick.5 We soft-baked the resist on a hot plate by ramping the temperature from room temperature to 105 ◦C over～8 min, holding the hot plate at 105 ◦C for 15 min,and allowing the wafer to cool back to room temperature.After exposure of the resist to UV light (Karl Suss MA4 Mask Aligner, Waterbury, VT) through an appropriate mask, wepost-baked the resist using the same schedule as for the softbake step. We repeated the spin-coating and soft-bake steps tocoat a second layer of resist onto the first. The change in theindex of refraction of the resist on exposure to light permitted us to align features in the second layer of resist to the first to within a few micrometres. After exposure of the resist and the post-bake step, both resist layers were developed in propyleneglycol methyl ether acetate (PGMEA) for about 5–10 min.If the substrate for the SU-8 was pyrex (4"; Bullen Ultrasonics, Eaton, OH)or quartz (4"; Hoya, San Jose, CA),we prepared the wafers as for silicon. We increased the time of the dehydration bake to at least 40 min, however. In cases where we would later release the SU-8 structure from the substrate,we typically used oxide-coated silicon wafers and we did not perform the dehydration bake before processing. For thicker films (>200 μm), we used SU-8 (100) resist. As an example, spin-coating the resist at 500 rpm for 15 s, followed by 3000 rpm for 15 s gave a film approximately 300 μm thick. The schedules for the soft bake and post-exposure bake were as for the 50 μm film; the bake times, however, were increased to 2 h and 30 min, respectively. |
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